The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron co...The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron composition contrast observation was introduced and discussed. By using multilayer P+Si1-xGex/pSi heterojunction internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunction semiconducting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconductor devices and multilayer materials are also discussed.展开更多
采用水热法制备PbTe微晶,研究水热法合成PbTe微晶工艺过程中碲源、反应时间、反应温度、碱加入量、还原剂及表面活性剂等对PbTe微晶形貌的影响,分别采用X射线衍射(X-ray diffraction,XRD)和扫描电镜(scanning electron microscope,SEM)...采用水热法制备PbTe微晶,研究水热法合成PbTe微晶工艺过程中碲源、反应时间、反应温度、碱加入量、还原剂及表面活性剂等对PbTe微晶形貌的影响,分别采用X射线衍射(X-ray diffraction,XRD)和扫描电镜(scanning electron microscope,SEM)对制备的PbTe进行表征.结果表明,控制不同的合成工艺可制备得到立方体、花状和树突状等多种形貌的PbTe微晶.展开更多
文摘The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron composition contrast observation was introduced and discussed. By using multilayer P+Si1-xGex/pSi heterojunction internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunction semiconducting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconductor devices and multilayer materials are also discussed.
文摘采用水热法制备PbTe微晶,研究水热法合成PbTe微晶工艺过程中碲源、反应时间、反应温度、碱加入量、还原剂及表面活性剂等对PbTe微晶形貌的影响,分别采用X射线衍射(X-ray diffraction,XRD)和扫描电镜(scanning electron microscope,SEM)对制备的PbTe进行表征.结果表明,控制不同的合成工艺可制备得到立方体、花状和树突状等多种形貌的PbTe微晶.
