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Photoluminescence Characteristics of ZnCuInS-ZnS Core-Shell Semiconductor Nanocrystals
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作者 Qiu-Lin Zhong Ming-Rui Tan +5 位作者 Qing-Hui Liu Ning Sui Ke Bi Mou-Cui Ni Ying-Hui Wang Han-Zhuang Zhang 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期104-107,共4页
The photoluminescence (PL) characteristics of ZnCuInS quantum dots (Q, Ds) with varying ZnS shell thicknesses of O, 0.5, and 1.5 layers are investigated systemically by time-correlated single-photon counting measu... The photoluminescence (PL) characteristics of ZnCuInS quantum dots (Q, Ds) with varying ZnS shell thicknesses of O, 0.5, and 1.5 layers are investigated systemically by time-correlated single-photon counting measurements and temperature-dependent PL measurements. The results show that a ZnS shell thickness of 1.5 layers can effectively improve the PL quantum yield in one order of magnitude by depressing the surface trapping states of the core ZnCuInS QDs at room temperature. However, the PL measurements at the elevated temperature reveal that the core-shell nanocrystals remain temperature-sensitive with respect to their relatively thin shells. The temperature sensitivity of these small-sized single-layered core-shell nanocrystals may find applications as effective thermometers for the in vivo detection of biological reactions within cells. 展开更多
关键词 In QDS ZNS Photoluminescence characteristics of ZnCuInS-ZnS Core-Shell semiconductor Nanocrystals
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INFLUENCE OF Pr_6O_(11) ON THE GAS SENSING CHARACTERISTICS OF SnO_2 SEMICONDUCTOR
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作者 Zhong Shike Liao Liangsheng(Department of Physics,Jiangxi University,Nanchang 330047,P.R.China) 《Journal of Rare Earths》 SCIE EI CAS CSCD 1990年第1期43-47,共5页
This paper is to discuss the sensing characteristics of SnO_2 semiconductor components in which Pr_6O_(11) is added.When experimenting under 11 gases of CH_3COCH_3,C_2H_5OH.C_6H_5CH_3,H_2,NH_3,CO, CO_2 CH_4,C_4H_10,n... This paper is to discuss the sensing characteristics of SnO_2 semiconductor components in which Pr_6O_(11) is added.When experimenting under 11 gases of CH_3COCH_3,C_2H_5OH.C_6H_5CH_3,H_2,NH_3,CO, CO_2 CH_4,C_4H_10,n—C_6H_(14)and n—C_7H_(16),we find that the components have selectivity to CH_3COCH_3, C_2H_5OH and that the ideal amount of Pr_6O_(11) in the components is about I.Owt%.The experiments also show that with the increase of the amount of Pr_6O_(11),the ideal working temperature,the response and restoration time decrease. 展开更多
关键词 SNO ON THE GAS SENSING characteristics OF SnO2 semiconductor INFLUENCE OF Pr6O GAS
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Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers 被引量:2
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作者 Qiao-Yin Lu, Xiao-Hong Chen, Wei-Hua Guo, Li-Juan Yu, Yong-Zhen Huang State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China, Tel: 010-82304524, E-mail: luqy@redsemi.ac.cnJian Wang and Yi LuoState Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期329-330,共2页
InGaAsP semiconductor ETR microlasers with side length of 5 and 10 um are fabricated by ICP etching. The peaks in photoluminenscent spectra corresponding to longitudinal modes are observed with the interval consisting... InGaAsP semiconductor ETR microlasers with side length of 5 and 10 um are fabricated by ICP etching. The peaks in photoluminenscent spectra corresponding to longitudinal modes are observed with the interval consisting with the theoretical formulae. 展开更多
关键词 for in on with ICP Study of Mode characteristics for Equilateral Triangle semiconductor Microlasers of
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Simulation of Fast-Recovery Cross-Modulation Characteristics in Semiconductor Optical Amplifier with Assist Light
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作者 Atsushi Matusmoto Kosuke Nishimura +1 位作者 Katsuyuki Utaka Masashi Usami 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期453-454,共2页
We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducin... We analyzed the characteristics of cross-modulations (XM) and their recovery times in a semiconductor optical amplifier by a newly-developed TMM. The calculated results suggest faster recovery of the XMs by introducing a high-power assist light. 展开更多
关键词 Simulation of Fast-Recovery Cross-Modulation characteristics in semiconductor Optical Amplifier with Assist Light as for of XPM SOA in with
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The Effect of Lateral Guiding Mechanism on Noise Characteristics in Semiconductor Lasers
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作者 Abbas Zarifkar Afsaneh Falahatpisheh +1 位作者 Mohammad Kazem Moravvej-Farshi Ebrahim Mortazy 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期465-466,共2页
A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations in... A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations including spontaneous emission noise. 展开更多
关键词 of in The Effect of Lateral Guiding Mechanism on Noise characteristics in semiconductor Lasers 林乙 on
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