Single output LD end-pumped passively mode-locked Nd:YVO_4 laser with semiconductor saturable absorber mirror

A quarter-wave plate and the thin film polarizer （TFP） are used for the LD end-pumped passively mode-locked Nd：YVO4 laser with semiconductor saturable absorber mirror （SESAM） to obtain a single beam output with a total power of 4.8 W. An optical-optical efficiency is achieved to be 24% for a stable CW mode-locking operation at 1064 nm, with a pulse repetition rate of 70 MHz and pulse width of 16 ps. The multipulse in the pulse sequence is eliminated for reaching a peak power as high as 4 kW.

Wavelength-Tunable Rectangular Pulses Generated from All-Fiber Mode-Locked Laser Based on Semiconductor Saturable Absorber Mirror

The wavelength-tunable rectangular mode-locking operation is demonstrated in an all-fiber laser based on semi- conductor saturable absorber mirror. As the dissipative soliton resonance signature, the pulse duration varies from 5SOps to 2.1 ns as a function o~ the increasing pump power. Correspondingly, the maximum pulse energy is 9.11 n3. Moreover, it is found that the wavelength tunable operation with a range of approximately 10 nm could be obtained by properly adjusting the polarization controllers. The characteristics of the rectangular pulses at different wavelengths are similar to each other. The demonstration of the wavelength tunable rectangular pulses would be beneficial to some applications for many fields such as spectroscopy and sensing research.

Periodic adjustment of the position of a laser beam spot on a semiconductor saturable absorber mirror in a passively mode-locked solid-state laser

A laser diode end-pumped passively mode-locked Nd：YVO4 solid-state laser with a semiconductor saturable ab- sorber mirror （SESAM）, in which the intracavity laser beam spot on the SESAM can be adjusted periodically, is investigated. Inserting a rectangular prism （RP） into the laser cavity is a promising approach towards the goal of periodically moving the position of the focus spot of the intracavity pulse on the SESAM surface to avoid the long-time irradiation of the laser beam on the same position, thereby solving a series of problems caused by damage to the SESAM and greatly prolonging its usage life. The adjustment of the rectangular prism in the laser cavity does not break the stable continuous wave （CW） mode-locked condition. The laser generates a stable picosecond pulse sequence at 1064 nm with an output power of 3.6 W and a pulse width of 14 ps. The instabilities of the output power and the pulse width are 1.77% and 4.5%, respectively.

Passively mode-locked Tm,Ho:YVO_4 laser based on a semiconductor saturable absorber mirror

We report the demonstration of passively continuous-wave mode-locking （CWML） of diode-pumped Tm,Ho：YVO4 laser using an InGaAs/GaAs multiple quantum-well （MQW） structure semiconductor as the saturable absorber. Stable mode-locking pulses at the central wavelength of 2 041 nm are obtained. The maximum output power is 151 roW. The pulse duration is 10.5 ps at the repetition rate of 64.3 MHz.

Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature

We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.

Semiconductor saturable-absorber mirror passively Q-switched Yb:YAG microchip laser

A compact passively Q-switched Yb：YAG microchip laser is demonstrated. Featuring a semiconductor saturable-absorber mirror （SESAM）, the laser yields pulses of 219 ps when the length of the microchip Yb：YAG crystal is 100 #m and the beam quality is M2 〈 1.3. To the best of our knowledge, pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb：YAG microchip lasers currently available.

A 12.1-W SESAM mode-locked Yb:YAG thin disk laser

Pumped by a 940 nm fiber-coupled diode laser, a passively mode-locked Yb：YAG thin disk oscillator was demonstrated with a semiconductor saturable absorber mirror（SESAM）. 12.1 W mode-locked pulses were obtained with pulse duration of 698 fs at the repetition rate of 57.43 MHz. Measurement showed that the beam quality was close to the diffraction limit.

Tunable dual-wavelength passively mode-locked Yb-doped fiber laser using SESAM

In this linear-cavity passively mode-locked laser based on semiconductor saturable absorber mirror, an Ybdoped fiber is shared by two branch cavities as gain medium. These two cavities can respectively output single-wavelength pulse with the wavelength tuning range of 1 009.~1 057.6 nm and 1 011.6-1 052.6 nm by adjusting volume Bragg grating. When two cavities output pulses together, the dual-wavelength pulses with the maximum and minimum wavelength separation of 34.8 and 2.4 nm, respectively, are achieved by net gain equalization method to suppress mode competition at room temperature. The maximum pulse energies of dual-wavelength pulses are 0.47 and 0.33 nJ separately; their repetition rates are 11.39 and 11.41 MHz.

Diode-pumped 13 W Yb:KGW femtosecond laser

We report on a high-power diode-pumped Yb∶KG(WO_(4))_(2)(Yb:KGW) mode-locked laser with a semiconductor saturable absorber mirror(SESAM). For 32.7 W of incident pump power, we generate 261 fs pulses with the maximum average output power of up to 13.0 W and spectrum centered around 1039 nm at 68.4 MHz, corresponding to 190 n J of single pulse energy and0.72 MW of peak power. The optical-to-optical conversion efficiency is 39.8%, and the slope efficiency is 64.4%. The Yb:KGW laser exhibits a power stability better than 0.543% of the root-mean-square in 2 h.

Compact high-power mode-locked Nd:YVO_4 picosecond laser using multiple-pass cavity

A stable self-starting mode-locked Nd：YVO4 laser with a Herriott-type multiple-pass cavity （MPC） oper- ating at 1 064 nm is demonstrated. An in-band 880-nm laser diode is used as an end-pump and a semi- conductor saturable absorber mirror （SESAM） is used for passive mode locking （ML） and providing pulse durations of 14 ps. At a pump power of 26.4 W, the maximum average output power is as high as 10.5 W at a repetition rate of 22 MHz, which corresponds to a single pulse energy of 0.48 #J. Optical-to-optical conversion efficiency is as high as 39.8~ at the maximum output power with a slope efficiency of 55.2%.

Diode-pumped passively mode-locked femtosecond Yb:(Y_(0.9)La_(0.1) )_2O_3 ceramic laser

We experimentally demonstrate a diode-pumped passively mode-locked femtosecond laser with yb3＋-doped yttrium lanthanum oxide ceramic. Mode-locking is achieved by using a semiconductor saturable absorber mirror, and intraeavity dispersion is compensated by a pair of SF6 prisms. Laser pulses as short as 357 fs at a central wavelength of 1 075 nm are obtained. The maximum average output power is 670 mW under 4.5 W of pumping power with a slope efficiency of 20%. To the best of our knowledge, this is the shortest pulse generated from Yb-doped yttrium lanthanum oxide ceramic lasers with a sub-500 fs pulse duration.