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The dual role of multiple-transistor charge sharing collection in single-event transients
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作者 郭阳 陈建军 +2 位作者 何益百 梁斌 刘必慰 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期360-364,共5页
As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing... As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. 展开更多
关键词 multiple-transistor charge sharing collection single event transient (SET) pulse quenching effect radiation hardened by design (RHBD)
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Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain 被引量:3
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作者 Chen Shu-Ming Chen Jian-Jun 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第1期340-345,共6页
A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional nu... A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments. 展开更多
关键词 temperature dependence single event transient parasitic bipolar amplification effect charge sharing collection
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