The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc rea...The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.展开更多
All-inorganic CsPbBr_(3)-based perovskite solar cells(PSCs)have attracted great attention because of their high chemical and thermal stabilities in ambient air.However,the short-circuit current density(J_(sc))of CsPbB...All-inorganic CsPbBr_(3)-based perovskite solar cells(PSCs)have attracted great attention because of their high chemical and thermal stabilities in ambient air.However,the short-circuit current density(J_(sc))of CsPbBr_(3)-based PSCs is inadequate under solar illumination because of the wide bandgap,inefficient charge extraction and recombination loss,leading to lower power-conversion efficiencies(PCEs).It is envisaged that in addition to narrowing the bandgap by alloying,J_(sc)of the PSCs could be enhanced by effective improvement of electron transportation,suppression of charge recombination at the interface between the perovskite and electron transporting layer(ETL),and tuning of the space charge field in the device.In this work,Nb-doped SnO_(2)films as ETLs in the CsPbBr_(3)-based PSCs have been deposited at room temperature by high target utilization sputtering(Hi TUS).Through optimizing the Nb doping level alone,the J_(sc)was increased by nearly 19%,from 7.51 to 8.92 mA·cm^(-2)and the PCE was enhanced by 27%from 6.73%to 8.54%.The overall benefit by replacing the spin-coated SnO_(2)with sputtered SnO_(2)with Nb doping was up to 39%increase in J_(sc)and 62%increase in PCE.Moreover,the PCE of the optimized device showed negligible degradation over exposure to ambient environment(T~25°C,RH~45%),with 95.4%of the original PCE being maintained after storing the device for 1200 h.展开更多
Narrow-bandgap n-type polymers are essential for advancing the development of all-polymer solar cells(all-PSCs).Herein,we developed a novel polymer acceptor PNT withπ-extended 2-(3-oxo-2,3-dihydro-1H-cyclopenta[b]nap...Narrow-bandgap n-type polymers are essential for advancing the development of all-polymer solar cells(all-PSCs).Herein,we developed a novel polymer acceptor PNT withπ-extended 2-(3-oxo-2,3-dihydro-1H-cyclopenta[b]naphthalen-1-ylidene)malononitrile(CPNM)end groups.Compared to commonly used 2-(3-oxo-2,3-dihydro-1H-cyclopenta[b]naphthalen-1ylidene)malononitrile(IC)units,CPNM units have a further extended fused ring,providing the PNT polymer with extended absorption into the near-IR region(903 nm)and exhibiting a narrow optical bandgap(1.37 eV).Furthermore,PNT exhibits a high electron mobility(6.79×10^(−4) cm^(2)·V^(−1)·S^(−1))and a relatively high-lying lowest unoccupied molecular orbital(LUMO)energy level of−3.80 eV.When blended with PBDB-T,all-PSC achieves a power conversion efficiency(PCE)of 13.7%and a high short-circuit current density(JSC)of 24.4 mA·cm^(−2),mainly attributed to broad absorption(600—900 nm)and efficient charge separation and collection.Our study provides a promising polymer acceptor for all-PSCs and demonstrates thatπ-extended CPNM units are important to achieve high-performance for all-PSCs.展开更多
基金Project partly supported by the National High Technology Research and Development Program of China(No.2011AA050504)
文摘The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.
基金supported by the National Natural Science Foundation of China(Nos.51602290,91233101,11174256)the Fundamental Research Program from the Ministry of Science and Technology of China(No.2014CB31704)+4 种基金Project funded by China Postdoctoral Science Foundation(No.2016M592310)the financial support from EPSRC New Investigator Award(2018EP/R043272/1)H2020-EU grant(2018CORNET 760949)
文摘All-inorganic CsPbBr_(3)-based perovskite solar cells(PSCs)have attracted great attention because of their high chemical and thermal stabilities in ambient air.However,the short-circuit current density(J_(sc))of CsPbBr_(3)-based PSCs is inadequate under solar illumination because of the wide bandgap,inefficient charge extraction and recombination loss,leading to lower power-conversion efficiencies(PCEs).It is envisaged that in addition to narrowing the bandgap by alloying,J_(sc)of the PSCs could be enhanced by effective improvement of electron transportation,suppression of charge recombination at the interface between the perovskite and electron transporting layer(ETL),and tuning of the space charge field in the device.In this work,Nb-doped SnO_(2)films as ETLs in the CsPbBr_(3)-based PSCs have been deposited at room temperature by high target utilization sputtering(Hi TUS).Through optimizing the Nb doping level alone,the J_(sc)was increased by nearly 19%,from 7.51 to 8.92 mA·cm^(-2)and the PCE was enhanced by 27%from 6.73%to 8.54%.The overall benefit by replacing the spin-coated SnO_(2)with sputtered SnO_(2)with Nb doping was up to 39%increase in J_(sc)and 62%increase in PCE.Moreover,the PCE of the optimized device showed negligible degradation over exposure to ambient environment(T~25°C,RH~45%),with 95.4%of the original PCE being maintained after storing the device for 1200 h.
基金supported by National Natural Science Foundation of China(NSFC)(No.51973146)Shandong Provincial Natural Science Foundation(ZR2022JQ09)。
文摘Narrow-bandgap n-type polymers are essential for advancing the development of all-polymer solar cells(all-PSCs).Herein,we developed a novel polymer acceptor PNT withπ-extended 2-(3-oxo-2,3-dihydro-1H-cyclopenta[b]naphthalen-1-ylidene)malononitrile(CPNM)end groups.Compared to commonly used 2-(3-oxo-2,3-dihydro-1H-cyclopenta[b]naphthalen-1ylidene)malononitrile(IC)units,CPNM units have a further extended fused ring,providing the PNT polymer with extended absorption into the near-IR region(903 nm)and exhibiting a narrow optical bandgap(1.37 eV).Furthermore,PNT exhibits a high electron mobility(6.79×10^(−4) cm^(2)·V^(−1)·S^(−1))and a relatively high-lying lowest unoccupied molecular orbital(LUMO)energy level of−3.80 eV.When blended with PBDB-T,all-PSC achieves a power conversion efficiency(PCE)of 13.7%and a high short-circuit current density(JSC)of 24.4 mA·cm^(−2),mainly attributed to broad absorption(600—900 nm)and efficient charge separation and collection.Our study provides a promising polymer acceptor for all-PSCs and demonstrates thatπ-extended CPNM units are important to achieve high-performance for all-PSCs.
