mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by in...mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.展开更多
文摘mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
