Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam pl...Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.展开更多
Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) ...Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.展开更多
Co30Cr8W1.6C3Ni1.4Si coatings were fabricated on Ti6Al4V alloy using a laser thermal spraying(LTS).The surface and cross-section morphologies,phases and bonding strength of obtained coatings were investigated using sc...Co30Cr8W1.6C3Ni1.4Si coatings were fabricated on Ti6Al4V alloy using a laser thermal spraying(LTS).The surface and cross-section morphologies,phases and bonding strength of obtained coatings were investigated using scanning electronic microscopy(SEM),X-ray diffraction(XRD),and scratch test,respectively.The effects of laser power on the coefficients of friction(COFs)and corrosive-wear behaviors of Co30Cr8W1.6C3Ni1.4Si coatings were investigated using a wear tester in 3.5%NaCl solution,and the electrochemical corrosion performance was analyzed using an electrochemical workstation.The experimental results show that the Co30Cr8W1.6C3Ni1.4Si coating is bonded with the substrate in the metallurgical form,and the bonding strengths of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W are 76.5,56.5,and 55.6 N,respectively.The average COFs of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W are 0.769,0.893,and 0.941,respectively;and the corresponding wear rates are 0.267×105,0.3178×105,and 0.325×105μm3/Nm,respectively,which increases with the increase of laser power,the wear mechanism is primarily abrasive wear.The corrosion potential of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W is-0.05,-0.25,and-0.31 V,respectively,higher than-0.45 V of substrate which enhances the electrochemical corrosion resistance of substrate.展开更多
Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B4C–Si composites sint...Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B4C–Si composites sintered at high pressure and high temperature（HPHT, 5.2 GPa, 1620–1680 K for 3–5 min）. The results show that the diamond, cBN, B4C,BxSiC, SiO2 and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B4C. The high thermal stability is ascribed to the covalent bonds of B–C, C–N, and the solid-solution of BxSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability.展开更多
The performance of solid solution aging treatment on aluminum matrix composites prepared by powder metallurgy and reinforced with 6061 aluminum alloy powder as matrix;meanwhile, nano silicon carbide particles(nm Si Cp...The performance of solid solution aging treatment on aluminum matrix composites prepared by powder metallurgy and reinforced with 6061 aluminum alloy powder as matrix;meanwhile, nano silicon carbide particles(nm Si Cp), submicron silicon carbide particles(1 μm Si Cp) and Ti particles were studied. The Al/Si Cp composite powder was prepared by high-energy ball milling, and then cold-pressed, sintered, hotextruded, and then heat-treated with different solution temperatures and aging times for the extruded composites. Optical microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy(EDS), X-ray diffractometer(XRD) and extrusion testing were used to analyze and test the microstructure and mechanical properties of aluminum matrix composites. The results show that after the multi-stage solid solution at 530 ℃×2 h+535 ℃×2 h+540 ℃×2 h, the particles are mainly equiaxed grains and uniformly distributed. There is no reinforcement agglomeration, and the surface is dense and the insoluble phase is basically dissolved. In the matrix, the strengthening effect is good, and the hardness and compressive strength are 179.43 HV and 680.42 MPa, respectively. Under this solution process, when the aluminum matrix composites are aged at 170 ℃ for 10 h, the hardness and compressive strength can reach their peaks and increase to 195.82 HV and 721.48 MPa, respectively.展开更多
Fiber-reinforced composites possess anisotropic mechanical and heat transfer properties due to their anisotropic fibers and structure distribution.In C/Si C composites,the out-of-plane thermal conductivity has mainly ...Fiber-reinforced composites possess anisotropic mechanical and heat transfer properties due to their anisotropic fibers and structure distribution.In C/Si C composites,the out-of-plane thermal conductivity has mainly been studied,whereas the in-plane thermal conductivity has received less attention due to their limited thickness.展开更多
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and...A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.展开更多
The microstructures of carbon precursors significantly affect the electrochemical performance of Si/C composite anodes.However,the interaction between Si and carbon materials with different structures is still unclear...The microstructures of carbon precursors significantly affect the electrochemical performance of Si/C composite anodes.However,the interaction between Si and carbon materials with different structures is still unclear.Pitch-based materials undergoing different thermal treatments are superior sources for synthesizing carbons with different structures.Herein,different types of mesophase pitch(domain,flow-domain and mosaic structure) obtained from controllable thermal condensation are utilized to prepare Si/C composite materials and the corresponding models are established through finite element simulation to explore the correlation between the lithium storage properties of Si/C composites and the structures of carbon materials.The results indicate that the flow-domain texture pitch P2 has a better ability to buffer the volume expansion of silicon particles for its highly ordered arrangement of carbon crystallites inside could disperse the swelling stress uniformly alongside the particle surface.The sample Si@P2 exhibits the highest capacity of 1328 mA h/g after 200 cycles at a current density of 0.1 A/g as well as the best rate performance and stability.While sample Si@P3 in which the mosaic texture pitch P3 composed of random orientation of crystallites undergoes the fastest capacity decay.These findings suggest that highly ordered carbon materials are more suitable for the synthesis of Si/C composite anodes and provide insights for understanding the interaction between carbon and silicon during the charging/discharging process.展开更多
文摘Structure and polarity of the Si C single crystal have been analyzed with the four- circle X- ray diffraction method by a double- crystal diffractom eter.The hexagonal{ 10 15 } pole figure shows that this Si C sam ple has a6 H modification.The difference between the integrated intensities m easured byω scan in the triple- axis diffraction set- up finds some convincing evidence that the surface is either a Si- terminated face or C- terminated face.The experi- mental ratios of| F( 0 0 0 L) | 2 / | F( 0 0 0 L) | 2 are in good agreem entwith the calculated ones after the dispersion cor- rections to the atomic scattering factors( L=6 ,12 and18,respectively) .Thus,this m easurem ent technique is con- venient for the application of the materials with remarkable surface polarity.
基金Project(51271012)supported by the National Natural Science Foundation of China
文摘Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.
基金Funded by the Key Research and Development Project of Jiangsu Province(BE2016052)。
文摘Co30Cr8W1.6C3Ni1.4Si coatings were fabricated on Ti6Al4V alloy using a laser thermal spraying(LTS).The surface and cross-section morphologies,phases and bonding strength of obtained coatings were investigated using scanning electronic microscopy(SEM),X-ray diffraction(XRD),and scratch test,respectively.The effects of laser power on the coefficients of friction(COFs)and corrosive-wear behaviors of Co30Cr8W1.6C3Ni1.4Si coatings were investigated using a wear tester in 3.5%NaCl solution,and the electrochemical corrosion performance was analyzed using an electrochemical workstation.The experimental results show that the Co30Cr8W1.6C3Ni1.4Si coating is bonded with the substrate in the metallurgical form,and the bonding strengths of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W are 76.5,56.5,and 55.6 N,respectively.The average COFs of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W are 0.769,0.893,and 0.941,respectively;and the corresponding wear rates are 0.267×105,0.3178×105,and 0.325×105μm3/Nm,respectively,which increases with the increase of laser power,the wear mechanism is primarily abrasive wear.The corrosion potential of Co30Cr8W1.6C3Ni1.4Si coatings fabricated at the laser power of 1000,1200,and 1400 W is-0.05,-0.25,and-0.31 V,respectively,higher than-0.45 V of substrate which enhances the electrochemical corrosion resistance of substrate.
基金supported by the National Natural Science Foundation of China(Grant No.51301075)the Project of Development and Reform Commission of Jilin Province,China(Grant No.2014Y136)
文摘Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B4C–Si composites sintered at high pressure and high temperature（HPHT, 5.2 GPa, 1620–1680 K for 3–5 min）. The results show that the diamond, cBN, B4C,BxSiC, SiO2 and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B4C. The high thermal stability is ascribed to the covalent bonds of B–C, C–N, and the solid-solution of BxSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability.
基金the Key Projects of Equipment Pre-research Foundation of the Ministry of Equipment Development of the Central Military Commission of China (No.6140922010201)the Key R&D Plan of Zhenjiang in 2018(No.GY2018021)。
文摘The performance of solid solution aging treatment on aluminum matrix composites prepared by powder metallurgy and reinforced with 6061 aluminum alloy powder as matrix;meanwhile, nano silicon carbide particles(nm Si Cp), submicron silicon carbide particles(1 μm Si Cp) and Ti particles were studied. The Al/Si Cp composite powder was prepared by high-energy ball milling, and then cold-pressed, sintered, hotextruded, and then heat-treated with different solution temperatures and aging times for the extruded composites. Optical microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy(EDS), X-ray diffractometer(XRD) and extrusion testing were used to analyze and test the microstructure and mechanical properties of aluminum matrix composites. The results show that after the multi-stage solid solution at 530 ℃×2 h+535 ℃×2 h+540 ℃×2 h, the particles are mainly equiaxed grains and uniformly distributed. There is no reinforcement agglomeration, and the surface is dense and the insoluble phase is basically dissolved. In the matrix, the strengthening effect is good, and the hardness and compressive strength are 179.43 HV and 680.42 MPa, respectively. Under this solution process, when the aluminum matrix composites are aged at 170 ℃ for 10 h, the hardness and compressive strength can reach their peaks and increase to 195.82 HV and 721.48 MPa, respectively.
基金supported by the National Natural Science Foundation of China(Grant Nos.52276086 and 52130604)the Basic Research Program of China(Grant No.514010303-102)the K.C.Wong Education Foundation。
文摘Fiber-reinforced composites possess anisotropic mechanical and heat transfer properties due to their anisotropic fibers and structure distribution.In C/Si C composites,the out-of-plane thermal conductivity has mainly been studied,whereas the in-plane thermal conductivity has received less attention due to their limited thickness.
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.
基金Project supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2021JJ30738)Scientific Research Fund of Hunan Provincial Education Department(Grant No.19K001)Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020(Grant No.202016)。
文摘A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.
基金financial support from the National Key Research and Development Programme (2018YFC1801901)the National Natural Science Foundation of China (21808115, 22108309, 52172093)+1 种基金the Key Research and Development Project (Major Project of Scientific and Technological Innovation) of Shandong Province (2020CXGC010308)the Taishan Scholar Program of Shandong (ts20190919)。
文摘The microstructures of carbon precursors significantly affect the electrochemical performance of Si/C composite anodes.However,the interaction between Si and carbon materials with different structures is still unclear.Pitch-based materials undergoing different thermal treatments are superior sources for synthesizing carbons with different structures.Herein,different types of mesophase pitch(domain,flow-domain and mosaic structure) obtained from controllable thermal condensation are utilized to prepare Si/C composite materials and the corresponding models are established through finite element simulation to explore the correlation between the lithium storage properties of Si/C composites and the structures of carbon materials.The results indicate that the flow-domain texture pitch P2 has a better ability to buffer the volume expansion of silicon particles for its highly ordered arrangement of carbon crystallites inside could disperse the swelling stress uniformly alongside the particle surface.The sample Si@P2 exhibits the highest capacity of 1328 mA h/g after 200 cycles at a current density of 0.1 A/g as well as the best rate performance and stability.While sample Si@P3 in which the mosaic texture pitch P3 composed of random orientation of crystallites undergoes the fastest capacity decay.These findings suggest that highly ordered carbon materials are more suitable for the synthesis of Si/C composite anodes and provide insights for understanding the interaction between carbon and silicon during the charging/discharging process.
