In order to recover the SiO_2 contained in the mother liquor in the course ofNaY zeolite synthesis to minimize pollution, the influence of various preparation conditions on thefiltering velocity of gel slurry was stud...In order to recover the SiO_2 contained in the mother liquor in the course ofNaY zeolite synthesis to minimize pollution, the influence of various preparation conditions on thefiltering velocity of gel slurry was studied using the SiO_2/Al_2O_3 gel recovered from the NaYmother liquor in the laboratory. The results of study had shown that at a SiO_2/Al_2O_3 ratio in thefeed equating to 9∶1 the SiO_2 recovery rate and Al_2O_3 utilization rate were high with a fasterflow velocity of the filtrate. The pH value of the system had great impact on the flow velocity offiltrate. Between the two methods for regulating the pH value, the one for formation ofsilica/alumina gel slurry by addition of sulfuric acid prior to adding aluminium sulfate in thesolution could secure a faster filtration velocity. The filtration velocity was decreased in tandemwith increasing SiO_2 concentration in mother liquor, meanwhile an increase in dry filter cakeyield.展开更多
This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous pha...This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.展开更多
Pressure is an effective and clean way to modify the electronic structures of materials,cause structural phase transitions and even induce the emergence of superconductivity.Here,we predicted several new phases of the...Pressure is an effective and clean way to modify the electronic structures of materials,cause structural phase transitions and even induce the emergence of superconductivity.Here,we predicted several new phases of the Zr XY family at high pressures using the crystal structures search method together with first-principle calculations.In particular,the Zr Ge S compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa.Electronic band structures show that all the high-pressure phases are metallic.Among these new structures,P4/nmm-II Zr Ge S and P4/mmm Zr Ge Se can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K,respectively.Our study provides a way to tune the structure,electronic properties,and superconducting behavior of topological materials through pressure.展开更多
文摘In order to recover the SiO_2 contained in the mother liquor in the course ofNaY zeolite synthesis to minimize pollution, the influence of various preparation conditions on thefiltering velocity of gel slurry was studied using the SiO_2/Al_2O_3 gel recovered from the NaYmother liquor in the laboratory. The results of study had shown that at a SiO_2/Al_2O_3 ratio in thefeed equating to 9∶1 the SiO_2 recovery rate and Al_2O_3 utilization rate were high with a fasterflow velocity of the filtrate. The pH value of the system had great impact on the flow velocity offiltrate. Between the two methods for regulating the pH value, the one for formation ofsilica/alumina gel slurry by addition of sulfuric acid prior to adding aluminium sulfate in thesolution could secure a faster filtration velocity. The filtration velocity was decreased in tandemwith increasing SiO_2 concentration in mother liquor, meanwhile an increase in dry filter cakeyield.
文摘This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.
基金the financial support from the National Natural Science Foundation of China(Grant Nos.12125404,11974162,and 11834006)the Fundamental Research Funds for the Central Universities,China。
文摘Pressure is an effective and clean way to modify the electronic structures of materials,cause structural phase transitions and even induce the emergence of superconductivity.Here,we predicted several new phases of the Zr XY family at high pressures using the crystal structures search method together with first-principle calculations.In particular,the Zr Ge S compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa.Electronic band structures show that all the high-pressure phases are metallic.Among these new structures,P4/nmm-II Zr Ge S and P4/mmm Zr Ge Se can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K,respectively.Our study provides a way to tune the structure,electronic properties,and superconducting behavior of topological materials through pressure.
