Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Monolithic semi-polar(1■01) InGaN/GaN near white light-emitting diodes on micro-striped Si(100) substrate

The epitaxial growth of novel GaN-based light-emitting diode(LED) on Si(100) substrate has proved challenging.Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si(100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells(MQWs) with different well widths are grown on semi-polar(1■01)planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.

PREPARATION OF LN_2 TEMPERATURE REGION SUPERCONDUCTOR FILM ON Si(100) SUBSTRATE

Expermental results of the preparation of YBaCuO superconductor thin film on Si(100) substrate by the method of ion beam sputtering deposition is presented.A ZrO_2 buffer layer was applied to Si(100)substrate,and was found to play an important role in resisting the diffusion of Si toward the film.The thin film is mainly a 123 phase with strong c-axis prefer- red orientation.The onset transition temperature of the film is 100 K and the final transition temperature 78 K.

Determination of Trace Titanium by Solid Substrate-Room Temperature Phosphorimetry with 4,5-Dibromophenylfluorone as Luminescent Ligand and Triton X-100 as Sensitizer

A new highly sensitive solid substrate room temperature phosphorimetry for the determination of trace titanium is proposed based on the sensitization of Triton X-100 to the SS-RTP intensity of 4,5-dibromophenylfluorone-titanium complex adsorbed on the filter paper substrate modified by gelatin. When Triton X-100 was added into the luminescence system, the RTP intensity was raised 3 times stronger than that of the system without Triton X-100. The linear dynamic range of the new method is 0 64~3 2 fg/spot(0 4 μL) with a detection limit of 12 8 ag/spot, and the regression equation of the working curve is Δ I p =482 0+119 5 m Ti(Ⅳ) (fg/spot), the correlation coefficient r =0 9992, n =6. The phosphorescence lifetime( τ =0 85 ms) was also determined. The recoveries(and RSD) for the determinations of titanium in human hair and tea samples were 101 0%(3 0%) and 99 97%(4 2%), respectively.

Characteristics of In_(0.52)Al_(0.48)As Grown on InP(100) Substrates by Molecular Beam Epitaxy: Growth Optimisation and Effects of Si Doping

Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at a wide range of substrate tempreatures (470~550℃) and at different Si doping levels has been carried out. Low temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) analyses shaw a strong dependence of the PL and XRD linewidths, XRD intensity ratio (Lepi/Isub), and lattice-mismatch on the substrate temperature. The X-ray diffraction peaks of samples grown at law temperatures show a composition of smaller peaks, indicating the presence of disorder due to alloy clustering. Raman scattering measurements of the same samples show an additional higher energy mode at 273 cm-1 in addition to the InAs-like and AlAs-like longitudinal-optic (LO) phonon modes. Samples doped with Si show an inverted S-shaped dependence of the PL peak energy variation with the temperature which weakens at high doping levels due to a possible reduction in the donor binding energy. Supported be observations of a reduction in both the AlAs-like and InAs-like LO phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased, the PL intensity also shows in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous materials.

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

The fabrication and characterization of strained-Si material grown on a relaxed Si0.79 Ge0.21/graded Si1-x- Gex/Si virtual substrate, using reduced pressure chemical vapor deposition, are presented. The Ge concentration of the constant composition SiGe layer and the grading rate of the graded SiGe layer are estimated with double-crystal X-ray diffraction and further confirmed by SIMS measurements. The surface root mean square roughness of the strained Si cap layer is 2.36nm,and the strain is about 0.83% as determined by atomic force microscopy and Raman spectra, respectively. The threading dislocation density is on the order of 4 × 10^4cm^-2. Furthermore, it is found that the stress in the strained Si cap layer is maintained even after the high thermal budget process, nMOSFET devices are fabricated and measured in strained-Si and unstrained bulk-Si channels. Compared to the co-processed bulk-Si MOSFETs at room temperature,a significant low vertical field mobility enhancement of about 85% is observed in the strained-Si devices.

CMOS FinFET Fabricated on Bulk Silicon Substrate

A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.

盐浴等温热处理对超高强硬线钢100Si组织和性能的影响

通过测定100Si钢Φ14 mm盘条等温TTT曲线和设计盐浴热处理工艺实验对100Si钢盘条强塑性进行工艺技术研究。结果表明:100Si钢的鼻尖温度为580℃左右,对应等温转变孕育期最短时间为5 s左右,且100Si钢等温相变行为对温度十分敏感;随盐浴等温温度(510~580℃)的升高,盘条抗拉强度以及断面收缩率呈降低趋势;随离线奥氏体化温度升高,100Si钢盘条的珠光体球团尺寸增加;与热轧盘条相比,盐浴热处理条件下盘条的索氏体片层间距分布比较集中,且索氏体片层间距随着盐浴温度的降低而减小;温度低于920℃时,100Si钢中的V将以VC的形式在奥氏体中析出,且VC在铁素中的析出发生在珠光体转变之后;在较低的奥氏体化温度以及较低的盐浴温度下盘条中析出的VC粒子质量分数较少,会减弱析出强化;920℃离线奥氏体化、530℃盐浴等温的热轧盘条具有最好的索氏体相强化效果与析出强化效果之间的平衡,其较好的力学性能为抗拉强度1 650 MPa,断面收缩率32.5%。

Preparation of LiNbO_3 films on Si(111) substrates by a modified sol-gel process

The preparation of LiNbO 3 films on Si substrates was improved by adding CH 3CH 2OH solution containing a little water to the sol of LiNb(OC 2H 5) 6. The crystallization behavior of LiNbO 3 films on Si (111) substrates was studied and completely c axis oriented LiNbO 3 films were obtained. Such factors as the hydrogen termination of silicon surface, the RTP annealing process used, the unidirectional heat flow and the preheating temperature were taken into consideration while the crystallization of c axis oriented films was analysed. Surface morphologies of the films annealed in RTP and conventional furnaces were observed by means of AFM.

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si（111） substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer

We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlCaN interlayer on the structural properties of the resulting CaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AIGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Ⅲ–Ⅴ ternary nanowires on Si substrates: growth, characterization and device applications

Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group Ⅲ–Ⅴ semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of Ⅲ–Ⅴ structures as light sources and numerous other optical components on Si,which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires(NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of Ⅲ–Ⅴ semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary Ⅲ–Ⅴ NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary Ⅲ–Ⅴ NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the Ⅲ–Ⅴ ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary Ⅲ–Ⅴ NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.

Fast Growth of Highly Ordered TiO2 Nanotube Arrays on Si Substrate under High-Field Anodization

Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.

Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates

Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.

Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si （111） Substrate

Er2O3 thin films are grown on oxidized Si （111） substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction （GIXRD）, atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ell and the strain relaxation degree ε are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. （440）, （404）, and （044）, are isotropic.

Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substratea

High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.

Theoretical analysis of semi/non-polar In GaN/GaN light-emitting diodes grown on silicon substrates

A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes（LEDs） with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells（QWs） approaching the p-Ga N side, the uniformity of distribution of carriers and radiative recombination rate for the nonpolar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.

Performance improvement of Ga N-based light-emitting diodes transferred from Si(111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.

Laser Direct Writing of Ag Films from Solution on Si Substrate

Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.