We report the formation and local electronic structure of Ge clusters on the Si（111）-7×7 surface studied by using variable temperature scanning tunnelling microscopy （VT-STM） and low-temperature scanning tunn...We report the formation and local electronic structure of Ge clusters on the Si（111）-7×7 surface studied by using variable temperature scanning tunnelling microscopy （VT-STM） and low-temperature scanning tunnelling spectroscopy （STS）. Atom-resolved STM images reveal that the Ce atoms are prone to forming clusters with 1.0 nm in diameter for coverage up to 0.12 ML. Such Ce clusters preferentially nucleate at the centre of the faulted-half unit cells, leading to the ＇dark sites＇ of Si centre adatoms from the surrounding three unfaulted-half unit cells in filled-state images. Biasdependent STM images show the charge transfer from the neighbouring Si adatoms to Ce clusters. Low-temperature STS of the Ce clusters reveals that there is a band gap on the Ce cluster and the large voltage threshold is about 0.9 V.展开更多
In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calcula...In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calculations. Their scanning tunneling microscopic images and work functions are simulated and compared with experimental results. In this way, the hex-H3＇ and rect-T1 models are identified as the experimental configurations for the hexagonal and rectangular types, respectively. The structural evolution mechanism of the In/Si（lll） surface with indium coverage around 1.0 monolayer is discussed. The 4×1 and -√7× √3 phases are suggested to have two different types of evolution mechanisms, consistent with experimental results.展开更多
The multiple scattering cluster (MSC) method has been employed to perform a theoretical analysis on carbon is near edge X-ray absorption fine structure of the deuteron acetylene (C2 D2) adsorbed on Si(111)7× 7 at...The multiple scattering cluster (MSC) method has been employed to perform a theoretical analysis on carbon is near edge X-ray absorption fine structure of the deuteron acetylene (C2 D2) adsorbed on Si(111)7× 7 at room temperature. From the MSC study. it is confirmed that the (22D2 molecule is bonded to a pair of adjacent Si adatom and Si restatom with C-Si bond length about 0.18nm. The carbon-deuteron bond is bent away front the surface and the CCD bond angle is about 120°. The molecule plane tilt slightly away from the surface normal. Compared with C2D2 in gas phase, the C-C bond and C-D bond are elongated by about 0.03nm and 0.02nm respectively when acetylene was adsorbed on the subtrate. Keyowrds: adsorption of deuteron acetylene on Si(111)7×7. near edge X- ray absorption fine structure. multiple scattering cluster method展开更多
基金Project supported by the National Natural Science Foundation of China （Grant Nos 90406022 and 10674159）.
文摘We report the formation and local electronic structure of Ge clusters on the Si（111）-7×7 surface studied by using variable temperature scanning tunnelling microscopy （VT-STM） and low-temperature scanning tunnelling spectroscopy （STS）. Atom-resolved STM images reveal that the Ce atoms are prone to forming clusters with 1.0 nm in diameter for coverage up to 0.12 ML. Such Ce clusters preferentially nucleate at the centre of the faulted-half unit cells, leading to the ＇dark sites＇ of Si centre adatoms from the surrounding three unfaulted-half unit cells in filled-state images. Biasdependent STM images show the charge transfer from the neighbouring Si adatoms to Ce clusters. Low-temperature STS of the Ce clusters reveals that there is a band gap on the Ce cluster and the large voltage threshold is about 0.9 V.
基金V. ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.20603032, No.20733004, No.21121003, No.91021004, No.20933006）, the National Key Basic Research Program （No.2011CB921400）, the Foundation of National Excellent Doctoral Dissertation of China （No.200736）, the Fundamental Research Funds for the Central Universities （No.WK2340000006 and No.WK2060140005）, and the Shanghai Supercompurer Center, the USTC-HP HPC Project, and the SCCAS.
文摘In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calculations. Their scanning tunneling microscopic images and work functions are simulated and compared with experimental results. In this way, the hex-H3＇ and rect-T1 models are identified as the experimental configurations for the hexagonal and rectangular types, respectively. The structural evolution mechanism of the In/Si（lll） surface with indium coverage around 1.0 monolayer is discussed. The 4×1 and -√7× √3 phases are suggested to have two different types of evolution mechanisms, consistent with experimental results.
基金The authors acknowledge the financial support of the National Natural Science Foun-dation of China (Grant No.19974036)
文摘The multiple scattering cluster (MSC) method has been employed to perform a theoretical analysis on carbon is near edge X-ray absorption fine structure of the deuteron acetylene (C2 D2) adsorbed on Si(111)7× 7 at room temperature. From the MSC study. it is confirmed that the (22D2 molecule is bonded to a pair of adjacent Si adatom and Si restatom with C-Si bond length about 0.18nm. The carbon-deuteron bond is bent away front the surface and the CCD bond angle is about 120°. The molecule plane tilt slightly away from the surface normal. Compared with C2D2 in gas phase, the C-C bond and C-D bond are elongated by about 0.03nm and 0.02nm respectively when acetylene was adsorbed on the subtrate. Keyowrds: adsorption of deuteron acetylene on Si(111)7×7. near edge X- ray absorption fine structure. multiple scattering cluster method
