We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
用反应磁控溅射方法,在不锈钢表面沉积Ti Si N薄膜。用原子力显微镜观察薄膜的表面形貌,Ti Si N颗粒尺寸小于0.1μm,用亚微压入仪测试薄膜硬度,当硅的摩尔分数为9.6%时,薄膜硬度出现最大值47GPa。球盘式摩擦磨损结果表明,Ti Si N薄膜的...用反应磁控溅射方法,在不锈钢表面沉积Ti Si N薄膜。用原子力显微镜观察薄膜的表面形貌,Ti Si N颗粒尺寸小于0.1μm,用亚微压入仪测试薄膜硬度,当硅的摩尔分数为9.6%时,薄膜硬度出现最大值47GPa。球盘式摩擦磨损结果表明,Ti Si N薄膜的耐磨性能明显优于TiN薄膜,加入少量硅元素后,TiN薄膜的抗磨损性能有显著提高,但Ti Si N薄膜的室温摩擦系数较高(0.6～0.8),高温下摩擦系数也仅轻微降低(550℃,0.5～0.6)。由于Ti Si N薄膜的摩擦系数可能与磨损中氧化物生成量的增加有关,常温下Ti Si N薄膜的摩擦系数随硅摩尔分数的增加而增大,而高温下Ti Si N薄膜的摩擦系数随硅含量上升而降低。展开更多
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘用反应磁控溅射方法,在不锈钢表面沉积Ti Si N薄膜。用原子力显微镜观察薄膜的表面形貌,Ti Si N颗粒尺寸小于0.1μm,用亚微压入仪测试薄膜硬度,当硅的摩尔分数为9.6%时,薄膜硬度出现最大值47GPa。球盘式摩擦磨损结果表明,Ti Si N薄膜的耐磨性能明显优于TiN薄膜,加入少量硅元素后,TiN薄膜的抗磨损性能有显著提高,但Ti Si N薄膜的室温摩擦系数较高(0.6～0.8),高温下摩擦系数也仅轻微降低(550℃,0.5～0.6)。由于Ti Si N薄膜的摩擦系数可能与磨损中氧化物生成量的增加有关,常温下Ti Si N薄膜的摩擦系数随硅摩尔分数的增加而增大,而高温下Ti Si N薄膜的摩擦系数随硅含量上升而降低。
