Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XP...Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.展开更多
文摘Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.
