The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the p...The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate（0001） Si and a（0001） C surface have been studied based on the alumina abrasive in chemical mechanical polishing（CMP）.The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.展开更多
Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Am...Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Among these polytypes,3C SiC、6H SiC and 4H SiC are the most common ones,the band width of them are 2.4eV,3.0eV , an d 3.4eV,restpectively.For its high temperature tolerance and radiation resistanc e,silicon carbide semiconductor can be extensively used to fabricate the power d evi ces and electroluminescence devices operating at high power,high frequency and high radiation environments. The aim of this paper is to introduce our research results of the growth of larg e SiC single crystals by physical vapor transport method.The seed is SiC single crystal wafer with perfect (0001)Si face,which is chosen from the furnace growi ng the green abrasive material of SiC in industry.The source is green powder of SiC .The seed and the source are placed into the graphite crucible of a graphite res i stively heated vacuum furnace.The growth chamber is filled with the atmosphere o f pure araon.When the temperature of source rises to 2300℃,the crystal growth p ro ceeds.The rate of crystal growth is dependent on the growth temperature,the pres sure in furnace and the temperature gradient and distance between the seed and t h e source.Under the controlled growth conditions,the bulk SiC crystal with a diam eter of 40mm and a thickness of 15mm is obtained.The crystal appears to be n type electrical conductivity,the results of X ray Laue photography analysis indicat e that it is 6H SiC polytype.The defects of the crystal are also studied by many kinds of method.展开更多
基金supported by the National Natural Science Foundation of China(No.51075125)the Key Scientific Research Program of Economic and Social Development of Xinxiang City(No.S10004)the Science and Technology Innovation Program of Henan Institute of Science and Technology
文摘The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate（0001） Si and a（0001） C surface have been studied based on the alumina abrasive in chemical mechanical polishing（CMP）.The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.
文摘Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Among these polytypes,3C SiC、6H SiC and 4H SiC are the most common ones,the band width of them are 2.4eV,3.0eV , an d 3.4eV,restpectively.For its high temperature tolerance and radiation resistanc e,silicon carbide semiconductor can be extensively used to fabricate the power d evi ces and electroluminescence devices operating at high power,high frequency and high radiation environments. The aim of this paper is to introduce our research results of the growth of larg e SiC single crystals by physical vapor transport method.The seed is SiC single crystal wafer with perfect (0001)Si face,which is chosen from the furnace growi ng the green abrasive material of SiC in industry.The source is green powder of SiC .The seed and the source are placed into the graphite crucible of a graphite res i stively heated vacuum furnace.The growth chamber is filled with the atmosphere o f pure araon.When the temperature of source rises to 2300℃,the crystal growth p ro ceeds.The rate of crystal growth is dependent on the growth temperature,the pres sure in furnace and the temperature gradient and distance between the seed and t h e source.Under the controlled growth conditions,the bulk SiC crystal with a diam eter of 40mm and a thickness of 15mm is obtained.The crystal appears to be n type electrical conductivity,the results of X ray Laue photography analysis indicat e that it is 6H SiC polytype.The defects of the crystal are also studied by many kinds of method.
