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杂质不完全离化对MISiC气体传感器的影响
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作者 王巍 代作海 +3 位作者 王晓磊 唐政维 徐洋 王平 《传感器与微系统》 CSCD 北大核心 2010年第9期67-69,73,共4页
研究了杂质不完全离化对金属—绝缘体—碳化硅(MISiC)传感器性能的影响。考虑到Pool-Frenkel效应和外加电场的作用,建立了MISiC器件空间电荷区泊松方程。运用准中性近似,对所建立的泊松方程进行数值计算,得到了空间电荷区的电势分布,进... 研究了杂质不完全离化对金属—绝缘体—碳化硅(MISiC)传感器性能的影响。考虑到Pool-Frenkel效应和外加电场的作用,建立了MISiC器件空间电荷区泊松方程。运用准中性近似,对所建立的泊松方程进行数值计算,得到了空间电荷区的电势分布,进而得到MISiC传感器的I-V与C-V特性。实验结果表明:室温下SiC器件中杂质不完全离化,随着温度的升高,杂质离化率增大。在外加电场的作用下,杂质的离化率增加,并最终导致MISiC器件I-V与C-V曲线的移动。 展开更多
关键词 金属-绝缘体-碳化硅 杂质离化 泊松方程 Pool-Frenkel效应 气体传感器
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快速热压法制备掺杂纳米SiC的MgB_2超导体
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作者 曲波 薛翠平 孙旭东 《东北大学学报(自然科学版)》 EI CAS CSCD 北大核心 2009年第11期1586-1589,共4页
采用快速热压烧结技术,在流动的高纯氩气保护氛围下,成功地制备出致密MgB2块材.系统地介绍了快速热压技术烧结MgB2块材的工艺,找出了烧结温度、保温时间、原料配比等最佳工艺参数;讨论了SiC纳米相的掺杂对MgB2块体的影响,包括微观显微... 采用快速热压烧结技术,在流动的高纯氩气保护氛围下,成功地制备出致密MgB2块材.系统地介绍了快速热压技术烧结MgB2块材的工艺,找出了烧结温度、保温时间、原料配比等最佳工艺参数;讨论了SiC纳米相的掺杂对MgB2块体的影响,包括微观显微组织、物相分析、临界电流密度(Jc)等.实验表明,在快速热压条件下,950℃保温30min,随后炉冷,可以制备出理想的MgB2块材,质量分数为5%SiC的掺杂可以极大地提高MgB2的超导性能.测试温度在20K以下,在自场下Jc可达到106A/cm2以上;在5K下,当外加磁场增加到7T时,Jc缓慢下降,但仍在105A/cm2以上,使其实用性得到更进一步改善. 展开更多
关键词 MGB2 超导体 快速热压 sic掺杂
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Synthesis and microwave dielectric properties of boron doped SiC powder by sol-gel method
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作者 李智敏 罗发 +2 位作者 苏晓磊 朱冬梅 周万城 《中国有色金属学会会刊:英文版》 CSCD 2007年第A02期656-659,共4页
Nano-SiC powders doped by B were synthesized through the carbothermal reduction of xerogels containing the tributyl borate. The results show that the 3C-SiC with minor phase of 6H-SiC is generated at 1 700 ℃,and that... Nano-SiC powders doped by B were synthesized through the carbothermal reduction of xerogels containing the tributyl borate. The results show that the 3C-SiC with minor phase of 6H-SiC is generated at 1 700 ℃,and that there are not the characteristic peaks of any boride in the XRD patterns,which indicates that the boron is available only on the crystallization of 3C-SiC. The Raman spectra of the samples also show the characteristic bands of 3C-and 6H-SiC at 788 and 965 cm-1. But the bands at 1 345 and 1 590 cm-1 are characteristic peaks of amorphous carbon materials. The intensities of peaks at 788 and 965 cm-1 increase with B content in Raman spectra,which also shift to higher wavenumber with the increasing B. The microstructure of SiC powder is composed of agglomerated particles with diameters ranging from 30 to 100 nm. The results of dielectric property show that the sample with 0.005 B has the largest values in ε′ and ε″ among the four samples due to the existence of the intrinsic defects. But the absence of the relaxation polarization leads to low values of all the samples. 展开更多
关键词 碳化硅粉末 制备方法 微波介电性能 硼掺杂
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Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations 被引量:3
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作者 LIU ZhaoQing & NI Jun Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing 100084, China 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2010年第1期1-10,共10页
Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to repla... Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to replace either Si or C atoms as dopants. We find that some nonmagnetic substitutional dopants (mainly the Group IA, Group IIA, Group IIIB, and Group VIIB elements) prefer the spin-polarized ground states with local magnetic moments. In general, the condition for obtaining the local magnetic moments and the magnetic ground state requires that the dopants are p-type and have large electronegativity difference from the neighboring host atoms. The magnetic moments can be tuned over a range between 1 μ B and 3 μ B by doping with the nonmagnetic elements. The nearest-neighbor exchange couplings J 0 between the local magnetic moments are quite large and the codoping method is proposed to increase the dopant concentration. These imply that the nonmagnetic doping in SiC may exhibit collective magnetism. Moreover, the Group IIA Mg and Ca atoms substituting the preferred Si atoms favor the ferromagnetic ground states with the half-metallic electronic properties, which suggests that Mg or Ca substitutional doping on the Si sites in SiC could be a potential route to fabricating the diluted magnetic semiconductors. 展开更多
关键词 NONMAGNETIC dopant MAGNETISM sic diluted magnetic semiconductor FIRST-PRINCIPLE calculation
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