Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, and using diborane and ph...Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, and using diborane and phosphine as doping gases. The effects of changes in the microwave power on the deposition rate and optical bandgap were investigated, and variations in the photoand dark-conductivities and activation energy were studied in conjunction with film analysis using the Raman scattering technique. In the case of boron-doped samples, the conductivity increased rapidly to a maximum, followed by rapid reduction at high microwave power. The ratio of the photo- to dark-conductivity (σph/σd) peaked at microwave power of ~600 W. Under conditions of high microwave power, Raman scattering analysis showed evidence of the formation and increase in the silicon microcrystalline and diamond-like phases in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.In the case of phosphorusdoped SiC:H samples, it was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the films which occurred in correspondence to a rapid increase in the conductivity and reduction in the activation energy The conductivity increase stabilised in samples deposited at microwave power exceeding 500 W probably as a result of dopant saturation. Results from Raman scattering measurements also showed that phosphorus doping had the effect of enhancing the formation of the silicon microcrystals in the film whereas the presence of boron had the effect of preserving the amorphous structure.展开更多
Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be comp...Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be completely lost, after long-term use in the extreme conditions of corona erosion. In this research, the multi-needle-plate electrode platform was constructed to explore the long-term use performance of Si C-doped nanocomposite exposed to corona discharge in SF6gas. Samples with a high Si C content have advantages in maintaining physical and chemical properties such as elemental composition, erosion depth, surface roughness and mass loss. The nanocomposite doped with 6 wt.% Si C has prominent surface insulation strength after long term exposure to corona, and the others are close to losing, or have completely lost,their insulating properties. Furthermore, the degradation mechanism of physicochemical properties of composite exposed to corona discharge was investigated with the proposed Reax FF MD model of energetic particles from SF6decomposition bombarding the epoxy surface. The reaction process of SF particles and F particles with the cross-linked epoxy resin, and the Si C nanoparticles providing shelter to the surrounding polymer and mitigating their suffering direct bombardment, have been established. The damage propagation depth, mass loss and surface roughness change of nanocomposite material bombarded by SF6decomposition products is reproduced in this simulation. Finally, the deterioration mechanism of insulation properties for the Si C-doped composite was elucidated with DFT analysis. The band gap of the molecule containing S drops directly from the initial 7.785 e V to 1.875 e V, which causes the deterioration of surface electric properties.展开更多
Nitrogen doping has been proved to be an effective way to modify the properties of graphene and other carbon materials. Herein, we explore a composite with nitrogen doped carbon overlayers wrapping Si C substrate as a...Nitrogen doping has been proved to be an effective way to modify the properties of graphene and other carbon materials. Herein, we explore a composite with nitrogen doped carbon overlayers wrapping Si C substrate as a support for Ni（Ni/CN-Si C） and evaluate its effects on the methanation activity. The results show that both the activity and stability of Ni are enhanced. Characterization with STEM, XRD, XPS, Raman and H2-TPR indicates that nitrogen doping generates more defects in the carbon overlayers, which benefit the dispersion of Ni. Furthermore, the reduction of Ni is facilitated.展开更多
文摘Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, and using diborane and phosphine as doping gases. The effects of changes in the microwave power on the deposition rate and optical bandgap were investigated, and variations in the photoand dark-conductivities and activation energy were studied in conjunction with film analysis using the Raman scattering technique. In the case of boron-doped samples, the conductivity increased rapidly to a maximum, followed by rapid reduction at high microwave power. The ratio of the photo- to dark-conductivity (σph/σd) peaked at microwave power of ~600 W. Under conditions of high microwave power, Raman scattering analysis showed evidence of the formation and increase in the silicon microcrystalline and diamond-like phases in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.In the case of phosphorusdoped SiC:H samples, it was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the films which occurred in correspondence to a rapid increase in the conductivity and reduction in the activation energy The conductivity increase stabilised in samples deposited at microwave power exceeding 500 W probably as a result of dopant saturation. Results from Raman scattering measurements also showed that phosphorus doping had the effect of enhancing the formation of the silicon microcrystals in the film whereas the presence of boron had the effect of preserving the amorphous structure.
基金supported by National Natural Science Foundation of China(Nos.51737005,51929701,52177147 and 52127812)。
文摘Surface coating technology is an effective way to solve the interface insulation problem of DC GIS/GIL basin insulators, but the performance of the coating will change greatly, and the insulation strength will be completely lost, after long-term use in the extreme conditions of corona erosion. In this research, the multi-needle-plate electrode platform was constructed to explore the long-term use performance of Si C-doped nanocomposite exposed to corona discharge in SF6gas. Samples with a high Si C content have advantages in maintaining physical and chemical properties such as elemental composition, erosion depth, surface roughness and mass loss. The nanocomposite doped with 6 wt.% Si C has prominent surface insulation strength after long term exposure to corona, and the others are close to losing, or have completely lost,their insulating properties. Furthermore, the degradation mechanism of physicochemical properties of composite exposed to corona discharge was investigated with the proposed Reax FF MD model of energetic particles from SF6decomposition bombarding the epoxy surface. The reaction process of SF particles and F particles with the cross-linked epoxy resin, and the Si C nanoparticles providing shelter to the surrounding polymer and mitigating their suffering direct bombardment, have been established. The damage propagation depth, mass loss and surface roughness change of nanocomposite material bombarded by SF6decomposition products is reproduced in this simulation. Finally, the deterioration mechanism of insulation properties for the Si C-doped composite was elucidated with DFT analysis. The band gap of the molecule containing S drops directly from the initial 7.785 e V to 1.875 e V, which causes the deterioration of surface electric properties.
基金the financial support from the China Natural Science Foundation(21621063 and 21425312)
文摘Nitrogen doping has been proved to be an effective way to modify the properties of graphene and other carbon materials. Herein, we explore a composite with nitrogen doped carbon overlayers wrapping Si C substrate as a support for Ni（Ni/CN-Si C） and evaluate its effects on the methanation activity. The results show that both the activity and stability of Ni are enhanced. Characterization with STEM, XRD, XPS, Raman and H2-TPR indicates that nitrogen doping generates more defects in the carbon overlayers, which benefit the dispersion of Ni. Furthermore, the reduction of Ni is facilitated.
