The optical properties of tri-group（B, Al, Ga, In） doped（6,6） SiC nanotubes（SiCNTs） are studied from first principles. The results show that the main absorption and dispersion of SiCNTs caused by the intrinsic t...The optical properties of tri-group（B, Al, Ga, In） doped（6,6） SiC nanotubes（SiCNTs） are studied from first principles. The results show that the main absorption and dispersion of SiCNTs caused by the intrinsic transition appear in the ultraviolet-visible region（below 500 nm）, and the tri-group doping increases the minimum dielectric constant value resulting in enhanced transmittance. In addition, the tri-group doping can introduce a weak absorption and dispersion region in the near-mid-infrared region, and the response peak blue shifts as the diameter of the doping atom increases. Comparative studies of reflectance, absorptivity, and transmittance show that the key factors affecting the transmittance of SiCNTs are reflectance（or refractive index） rather than absorption coefficient.展开更多
Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In ...Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In the three silicon atoms around the carbon vacancy, two atoms form a stable bond and the other is a dangling bond. A similar structure is found in the nanotube with a silicon vacancy. A carbon vacancy results in a defect level near the top of the valence band, while a silicon vacancy leads to the formation of three defect levels in the band gap of the nanotube. Transitions between defect levels and energy levels near the bottom of the conduction band have a close relationship with the formation of the novel dielectric peaks in the lower energy range of the dielectric function.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11574261 and 51132002the Natural Science Foundation of Hebei Province under Grant No A2015203261
文摘The optical properties of tri-group（B, Al, Ga, In） doped（6,6） SiC nanotubes（SiCNTs） are studied from first principles. The results show that the main absorption and dispersion of SiCNTs caused by the intrinsic transition appear in the ultraviolet-visible region（below 500 nm）, and the tri-group doping increases the minimum dielectric constant value resulting in enhanced transmittance. In addition, the tri-group doping can introduce a weak absorption and dispersion region in the near-mid-infrared region, and the response peak blue shifts as the diameter of the doping atom increases. Comparative studies of reflectance, absorptivity, and transmittance show that the key factors affecting the transmittance of SiCNTs are reflectance（or refractive index） rather than absorption coefficient.
基金Project supported by the China Postdoctoral Science Foundation(No.201104619)the Fund of Shaanxi Provincial Educational Department (No.2010JK775)
文摘Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In the three silicon atoms around the carbon vacancy, two atoms form a stable bond and the other is a dangling bond. A similar structure is found in the nanotube with a silicon vacancy. A carbon vacancy results in a defect level near the top of the valence band, while a silicon vacancy leads to the formation of three defect levels in the band gap of the nanotube. Transitions between defect levels and energy levels near the bottom of the conduction band have a close relationship with the formation of the novel dielectric peaks in the lower energy range of the dielectric function.
