Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results ...Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.展开更多
In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area?sexist in the wafers. Some of ...In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area?sexist in the wafers. Some of the defects have areas of more than 100,000 μm2. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.?This work shows that ASM can locate the precise positions of the crystallographic defects, which?enables?defects repair and yield enhancement.展开更多
Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial g...Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.展开更多
基金Project (50975040) supported by the National Natural Science Foundation of China
文摘Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
文摘In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area?sexist in the wafers. Some of the defects have areas of more than 100,000 μm2. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.?This work shows that ASM can locate the precise positions of the crystallographic defects, which?enables?defects repair and yield enhancement.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60876003 and 60606003)the Science Foundation of the Chinese Academy of Sciences(Grant No.yz200702)
文摘Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.
