mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by in...mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.展开更多
Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auge...Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.展开更多
文摘mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
文摘Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.
