Processing and properties of 2D SiC/SiC composites by precursor infiltration and pyrolysis

Two-dimensional plain-weave silicon carbide fiber fabric reinforced silicon carbide(2D-SiC/SiC)composites were molded by stacking method and densified through precursor infiltration and pyrolysis(PIP)process.SiC coating was deposited as the fiber/matrix interphase layer by chemical vapor deposition(CVD)technique.Fiber/matrix debonding and relatively long fiber pullouts were observed on the fracture surfaces.Additionally,the flexural strength and elastic modulus of the composites with and without fiber/matrix interphase layer were investigated using three-point bending test and single-edge notched beam test.The results show that the fiber fraction and the porosity of 2D-SiC/SiC composites with and without coating are 27.2%(volume fraction)and 11.1%,and 40.7%(volume fraction)and 7.5%,respectively.And the flexural strength and elastic modulus of 2D-SiC/SiC composites with and without coating are 363.3 MPa and 127.8 GPa,and 180.2 MPa and 97.2 GPa,respectively.With a proper thickness,the coating can effectively adjust the fiber/matrix interface,thus causing a dramatic increase in the mechanical properties of the composites.

Environmental Effects on Microstructural Stability of SiC/SiC Composites

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Effects of Pressure during Preform Densification on SiC/SiC Composites

The nano-infiltration and transient eutectic-phase (NITE) method is one of the most attractive methods for fabrication of SiC and SiC/SiC composites. In the NITE method, preform densification is essential option for damage less near-net shaping technique. However, optimization of preform densification is insufficient yet. The objective of this study is to evaluate the effects of pressure during preform densification on SiC/SiC composites. The preform before preform densification has many pores in the inter-prepreg sheets. These pores were disappeared by preform densification. As the effects of pressure on preform, densification in the intra-fiber-bundle was improved due to increasing pressure. Flexural strength of the preforms with 1 MPa and 17 MPa indicated almost same value. The result suggested that increasing of pressure did not cause any change in fiber properties. In the effects of pressure on the composites, the composites with 17 MPa was exhibited improvement in bulk density and mechanical property, compared with that with 1 MPa.

Multi-scale Modeling and Finite Element Analyses of Thermal Conductivity of 3D C/SiC Composites Fabricating by Flexible-Oriented Woven Process

Thermal conductivity is one of the most significant criterion of three-dimensional carbon fiber-reinforced SiC matrix composites(3D C/SiC).Represent volume element(RVE)models of microscale,void/matrix and mesoscale proposed in this work are used to simulate the thermal conductivity behaviors of the 3D C/SiC composites.An entirely new process is introduced to weave the preform with three-dimensional orthogonal architecture.The 3D steady-state analysis step is created for assessing the thermal conductivity behaviors of the composites by applying periodic temperature boundary conditions.Three RVE models of cuboid,hexagonal and fiber random distribution are respectively developed to comparatively study the influence of fiber package pattern on the thermal conductivities at the microscale.Besides,the effect of void morphology on the thermal conductivity of the matrix is analyzed by the void/matrix models.The prediction results at the mesoscale correspond closely to the experimental values.The effect of the porosities and fiber volume fractions on the thermal conductivities is also taken into consideration.The multi-scale models mentioned in this paper can be used to predict the thermal conductivity behaviors of other composites with complex structures.

Tensile Mechanical Behavior and Failure Mechanism of a Plain-Woven SiCf/SiC Composites at Room and Elevated Temperatures

Ceramic matrix composites (CMCs) are the preferred materials for solving advanced aerospace high-temperature structural components;it has the comprehensive advantages of higher temperature (~1500˚C) and low density. In service environments, CMCs exhibit complex damage mechanisms and failure modes, which are affected by constituent materials, meso-architecture and inhere defects. In this paper, the in-plane tensile mechanical behavior of a plain-woven SiCf/SiC composite at room and elevated temperatures was investigated, and the factors affecting the tensile strength of the material were discussed in depth. The results show that the tensile modulus and strength of SiCf/SiC composites at high temperature are lower, but the fracture strain increases and the toughness of the composites is enhanced;the stitching holes significantly weaken the tensile strength of the material, resulting in the material is easy to break at the cross-section with stitching holes.

Ablation behaviour and mechanical performance of ZrB_(2)-ZrC-SiC modified carbon/carbon composites prepared by vacuum infiltration combined with reactive melt infiltration

The development of advanced aircraft relies on high performance thermal-structural materials,and carbon/carbon com-posites(C/C)composited with ultrahigh-temperature ceramics are ideal candidates.However,the traditional routes of compositing are either inefficient and expensive or lead to a non-uniform distribution of ceramics in the matrix.Compared with the traditional C/C-ZrC-SiC composites prepared by the reactive melt infiltration of ZrSi_(2),C/C-ZrB_(2)-ZrC-SiC composites prepared by the vacuum infiltration of ZrB_(2) combined with reactive melt infiltration have the higher content and more uniform distribution of the introduced ceramic phases.The mass and linear ablation rates of the C/C-ZrB_(2)-ZrC-SiC composites were respectively 68.9%and 29.7%lower than those of C/C-ZrC-SiC composites prepared by reactive melt infiltration.The ablation performance was improved because the volatilization of B_(2)O_(3),removes some of the heat,and the more uniformly distributed ZrO_(2),that helps produce a ZrO2-SiO2 continu-ous protective layer,hinders oxygen infiltration and decreases ablation.

Electromagnetic wave absorption and mechanical properties of SiC nanowire/low-melting-point glass composites sintered at 580°C in air

Si C nanowires are excellent high-temperature electromagnetic wave (EMW) absorbing materials. However, their polymer matrix composites are difficult to work at temperatures above 300℃, while their ceramic matrix composites must be prepared above 1000℃ in an inert atmosphere. Thus, for addressing the abovementioned problems, SiC/low-melting-point glass composites were well designed and prepared at 580℃ in an air atmosphere. Based on the X-ray diffraction results, SiC nanowires were not oxidized during air atmosphere sintering because of the low sintering temperature. Additionally, SiC nanowires were uniformly distributed in the glass matrix material. The composites exhibited good mechanical and EMW absorption properties. As the filling ratio of SiC nanowires increased from 5wt%to 20wt%, the Vickers hardness and flexural strength of the composite reached HV 564 and 213 MPa, which were improved by 27.7%and 72.8%, respectively, compared with the low-melting-point glass. Meanwhile, the dielectric loss and EMW absorption ability of SiC nanowires at 8.2–12.4 GHz were also gradually improved. The dielectric loss ability of low-melting-point glass was close to 0. However, when the filling ratio of SiC nanowires was 20wt%, the composite showed a minimum reflection loss (RL) of-20.2 dB and an effective absorption (RL≤-10 dB) bandwidth of2.3 GHz at an absorber layer thickness of 2.3 mm. The synergistic effect of polarization loss and conductivity loss in SiC nanowires was responsible for this improvement.

Damping performance of SiC nanoparticles reinforced magnesium matrix composites processed by cyclic extrusion and compression

This work dealt with the damping performance and its underlying mechanism in SiC nanoparticles reinforced AZ91D composite(SiC_(np)/AZ91D)processed by cyclic extrusion and compression(CEC).It was found that the CEC process significantly affects the damping performance of the composite due to alterations in the density of dislocations and grain boundaries in the matrix alloy.Although there would be dynamic precipitation of the Mg17Al12 phase during processing which increases the phase interface and limits the mobility of dislocations and grain boundaries.The results also showed that the damping capacity of 1%SiC_(np)/AZ91D composite continuously decreases with adding CEC pass number and it consistently increases with rising the applied temperature.Considering the first derivative of the tanδ-T curve,the dominant damping mechanism based on test temperature can be divided into three regions.These three regions are as follows(i)dislocation vibration of the weak pinning points(≤T_(cr)),(ii)dislocation vibration of the strong pinning points(T_(cr)∼T_(V)),and(iii)grain boundary/interface sliding(≥T_(V))

Effect of PyC Interface Thickness on the Heat-stability of Cansas-ⅡSiC_(f)/SiC Composites

The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.

Enhancement of the Mechanical Performance of SiCf/Phenolic Composites after High-temperature Pyrolysis Using ZrC/B_(4)C Particles

The composites were prepared by modifying silicon carbide fiber with particles of zirconium carbide(ZrC)and boron carbide(B_(4)C)and incorporating them into a phenolic resin matrix.The influence of ZrC and B_(4)C on the mechanical performance of SiCf/phenolic composites after high-temperature pyrolysis was studied through flexural performance test.The results show that the composite material has good thermal stability and high-temperature mechanical properties.After static ablation at 1400℃ for 15 minutes,the flexural strength of the composite material reaches 286 MPa,which is still 7.3%higher than at room temperature,indicating that the composite material still has good mechanical properties even after heat treatment at 1400℃.

316L不锈钢掺杂SiC环状同轴送粉TIG熔覆层组织结构与性能

TIG熔覆是经济高效的表面修复方法,与传统的预置粉末法相比,同轴送粉法具有优良的适应性,但是试验研究相对较少.自主设计制造了环状同轴送粉TIG熔覆焊枪,与管状同轴送粉TIG熔覆焊枪相比,制造的熔覆层不存在熄弧位置凹坑、焊缝不够平直以及焊缝熔宽不一致等问题,而且具有更高的熔覆效率.结果表明,采用优化的焊接热输入、送粉量和SiC含量参数匹配,在316L不锈钢表面进行环状同轴送粉TIG熔覆,获得了外观优良的单层单道熔覆层、单层多道熔覆层.对熔覆层进行显微硬度测量、微观组织及元素成分分析、宏观电化学腐蚀试验、微区电化学腐蚀试验以及耐磨性能测试,并与母材进行了比对,环状同轴送粉TIG熔覆导入的SiC粉末有效地提升了熔覆层的耐蚀性与耐磨性.

高灵敏度SiC动态高温压力传感器仿真研究

为了提高碳化硅(SiC)动态高温压力传感器的灵敏度,采用p型SiC材料,同时对传感器的敏感单元的不同结构———方膜和圆膜,利用Ansys软件进行了静力学仿真与分析,并完成了敏感芯片的尺寸设计。仿真结果表明:优化后的传感器输出灵敏度为14.2μV/(V·kPa)。在100~600℃内非线性误差小于1.53%。动态仿真表明:传感器的固有频率为481kHz,传感器可以在160kHz高频环境中安全工作,该结果为进一步制备SiC高温压力传感器奠定了理论支撑。

SiC/SiC复合材料层板低速冲击及其剩余强度试验研究

高速飞行器中的陶瓷基复合材料结构在服役过程中不可避免地会遇到低速冲击问题,低速冲击后的损伤形式以及剩余承载能力是影响飞行器结构安全的关键问题。本研究以二维编织SiC/SiC复合材料板件为研究对象,在不同能量下开展了低速冲击试验,分析了低速冲击载荷下试验件的表面损伤状态,通过计算机断层扫描技术观察了试验件内部的损伤形貌,结合冲击过程中的冲击响应曲线以及应变历史曲线,分析了SiC/SiC复合材料低速冲击过程的损伤机理。针对含勉强目视可见损伤的试验件开展了冲击后剩余强度试验,研究了勉强目视可见损伤对SiC/SiC复合材料剩余承载性能的影响。结果表明,在低速冲击载荷的作用下,试验件的表面损伤主要包括无表面损伤、勉强目视可见损伤、半穿透损伤以及穿透损伤,试验件的内部损伤主要有锥形体裂纹、纱线断裂以及分层损伤。低速冲击损伤会严重影响SiC/SiC复合材料的剩余性能,虽然试验件损伤勉强目视可见,但其剩余压缩强度为无损件81%,剩余拉伸强度仅为无损件的68%。

高压大功率SiC MOSFETs短路保护方法

碳化硅(SiC)MOSFETs短路承受能力弱,研究其短路保护方法成为保障电力电子设备安全运行的重要课题。现有方法大多围绕低压小功率SiC MOSFETs,然而随着电压和功率等级的提升,器件特性有所差异,直接套用以往设计难以实现高压大功率SiC MOSFETs的快速、可靠保护。该文首先详细研究了几种常用短路检测方法;其次基于高压大功率SiC MOSFETs器件特性,深入对比分析了不同短路检测方法的适用性,提出一种阻容式漏源极电压检测和栅极电荷检测相结合的短路保护方法;最后搭建了实验平台验证所提方法的可行性。结果表明,提出的方法在硬开关短路故障(hard switching fault,HSF)下,保护响应时间缩短了1.4μs,短路能量降低了62.5%;且能可靠识别负载短路故障(fault under load,FUL)。

SiC_(f)/Ti65复合材料的拉伸行为研究

采用磁控溅射先驱丝法结合热等静压工艺制备SiC_(f)/Ti65复合材料,研究了SiC_(f)/Ti65复合材料室温、高温拉伸行为,揭示了SiC_(f)/Ti65复合材料拉伸断裂机制。研究结果表明:SiC_(f)/Ti65复合材料的室温、高温抗拉强度相比于Ti65合金的抗拉强度分别提升29%和164%,验证了复合材料的增强效果。SiC_(f)/Ti65复合材料的室温拉伸断裂机制为反应层断裂、纤维/基体界面脱粘、基体脆性断裂、纤维断裂、包套韧性断裂;高温断裂机制为反应层断裂、纤维/基体界面脱粘、纤维断裂、W/SiC界面脱粘、基体和包套韧性断裂。

化学气相沉积SiC涂层反应特性及沉积过程的模拟研究

借助基于有限元原理的COMSOL软件和分子动力学模拟原理的Reax FF软件对化学气相沉积技术制备SiC涂层的反应特性及沉积过程进行模拟研究,为高温抗氧化复合涂层体系中SiC中间层的工艺优化及制备提供理论支持。结果表明,化学气相沉积SiC涂层过程包括前驱体三氯甲基硅烷(CH_(3)SiCl_(3))的扩散过程和热解反应过程,SiC涂层在扩散过程不会生长,仅从10^(−4)s后的热解反应过程开始生长,沉积生长过程同时伴随涂层的解离。随着入射粒子能量的增大,单位时间内沉积到基底表面的Si和C粒子数不断增加。提高粒子入射能量有利于提高SiC涂层的致密度,当入射粒子能量大于2 eV时可以实现SiC涂层的均匀生长,而当入射能量高于6 eV时,解离的Si和C粒子数量增大,不利于SiC涂层的生长。综合而言,当入射能量为3 eV时,化学气相沉积的SiC涂层综合性能最佳。

低压Si MOSFETs对SiC/Si级联器件短路特性的影响

由低压硅金属-氧化物-半导体场效应晶体管(Silicon Metal-Oxide-Semiconductor Field-Effect Transistor, Si MOSFET)和碳化硅结型场效应晶体管(Silicon Carbon Junction Field-Effect Transistor, SiC JFET)构成的SiC/Si级联(Cascode)器件,兼具了低压Si MOSFET易于驱动、SiC JFET高耐压低损耗等优点。该文采用实验和数值模拟的方式研究了低压Si MOSFET对SiC/Si级联器件短路特性的影响,结果表明,在短路过程中SiC/Si级联器件中的SiC JFET最高温度比单独的SiC JFET短路时的最高温度低,SiC/Si级联器件的短路失效时间得到了延长,并且随着Si MOSFET额定电压的增加,SiC/Si级联器件短路失效延长的时间也在增加。

SiC陶瓷的磨削去除机理及参数对磨削力影响

为探究SiC陶瓷的磨削去除机理及磨削参数对磨削力影响规律,基于SPH(smoothed particle hydrodynamics)法建立了单磨粒冲击SiC陶瓷仿真模型,分析了SiC磨削裂纹产生和扩展机制;通过单因素试验分析了v_(s),v_(w)和a_(p)对SiC磨削去除机理、法向磨削力和切向磨削力的影响规律.结果表明,磨粒冲击导致中位裂纹和横向裂纹产生,随着磨粒压入深度的增加,横向裂纹向材料近表面区域扩展,当横向裂纹扩展至材料表面形成脆性断裂;随着v_(s)的增大,v_(w)和a_(p)的减小,磨削表面产生的凹坑区域和凹坑深度减小,塑性去除区域变大,法向磨削力和切向磨削力均呈减小趋势.研究成果为SiC构件的高效低损伤加工提供重要依据.

SiC材料辐照性能的热释光表征分析研究

碳化硅(Si C)在航空航天、核裂变和核聚变反应堆等高辐照环境中有着广泛应用。由3c-SiC包覆层构成的TRISO燃料颗粒已商业化并应用于先进的高温气冷堆。其中35μm厚的3c-SiC包覆层是承受内压、阻挡裂变产物释放和高效导出核芯热能的关键层,是保证高温气冷堆安全的关键屏障之一。本文利用热释光(TL)分析对3c-SiC材料展开研究,实验证明SiC材料的发光峰强度随辐照剂量升高而增加。辐照后的发光峰随剂量增加向低温方向移动,遵循TL二阶动力学方程。在辐照环境下载能粒子使Si、C原子偏离晶体格点位置产生过饱和空位、间隙离子、错位原子等点缺陷,新增加了约194.5℃处的发光峰。晶体在生长过程中固有缺陷的浓度依赖于Gibbs自由能、结晶温度的变化,其固有缺陷浓度可以用TL的390℃发光峰表征。这两部分缺陷浓度的增加会使SiC层的包覆性能降低。本文还讨论了SiC材料的TL与Gibbs自由能、结晶温度和固有缺陷浓度的关系,SiC材料的缺陷浓度随结晶温度的增加而降低。本文研究结果对SiC包覆层的缺陷和性能分析有很好的参考价值,对辐照前后SiC包覆层的性能表征有一定的参考意义。

SiC改性提升聚酰亚胺薄膜直流耐电晕性能的机理

传统聚酰亚胺(PI)薄膜应用到更高电压等级设备中,易产生电晕放电甚至绝缘失效。为提升聚酰亚胺薄膜耐电晕能力,实验采取碳化硅(SiC)作为增强相对PI基体相进行改性,探究SiC改性对复合薄膜耐电晕特性的影响机理。实验结果表明,随着SiC含量增加,SiC/PI复合薄膜出现非线性电导特性并逐渐增强,其同步提升的浅深陷阱密度比与载流子迁移率促进了表面电荷消散速率的增加。同时,SiC提升了15 kV直流电压下薄膜的沿面闪络和击穿时间,其中质量分数25%SiC/PI复合薄膜较纯PI膜分别提升了416.28%和298.39%。这是因为增强的非线性电导率和表面电荷消散速率,有利于空间和表面电荷运输,减少电场畸变,从而提升复合薄膜的耐电晕能力。对电晕损伤薄膜的无损区、圆状白斑区和白色堆积区进行形貌观测,发现SiC颗粒会在等离子体碰撞下形成放电阻挡层,有效减少电晕对基体相的侵蚀,延长了复合薄膜的耐电晕时间。最后发现质量分数15%SiC/PI复合薄膜为综合耐电晕与力学特性下的最优选择。