Effect of PyC Interface Thickness on the Heat-stability of Cansas-ⅡSiC_(f)/SiC Composites

The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.

Interface Stability of the SiC Particles/Fe Matrix Composite System

The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10^(10)cm^(-2)·eV^(-1)@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^(-2)·eV^(-1)is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.

Effects of Nitridation on Properties of SiC Fiber and Interface of Ti Matrix Composite

Prenitridation of the TiBx coating surface of the Sigma SM1240 SiC fiber can form more stable compounds at the surface and obstruct the release of boron atoms into the Ti-based alloy matrix. The effect of nitridation on the tensile strength of the fiber was investigated in this work. Nitridation could degrade the tensile strength of the SiC fiber if the treating temperature and time are not optimized. The chemical reaction between the W core and SiC and the modification of fiber microstructure during the nitridation are responsible for the degradation in strength. The strength can be maintained by further optimization of the treating temperature and time. Therefore, stabilizing the surface of TiBx coating and hence the interface of the SiCf/Ti composite by the nitridation of the SiC fiber is a feasible technique for practical applications.

Numerical simulations of stress wave propagation and attenuation at arc-shaped interface inlayered SiC/Al composite

The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceramic to A1 alloy, the tensile stress decreases and the attenuation coefficient of the stress wave increases with increasing central angle of the concave interface between SiC and A1. But for the convex interface, the tensile stress increases and attenuation coefficient decreases with increasing central angle. As the stress wave propagates from A1 alloy to SiC ceramic, the atten- uation coefficient of stress wave decreases with increasing the central angle of the concave interface. For the convex interface, the attenuation coefficient increases with increasing central angle.

Passivation of carbon dimer defects in amorphous SiO_2/4H–SiC(0001) interface:A first-principles study

An amorphous SiO2/4 H–Si C（0001） interface model with carbon dimer defects is established based on density functional theory of the first-principle plane wave pseudopotential method.The structures of carbon dimer defects after passivation by H2 and NO molecules are established,and the interface states before and after passivation are calculated by the Heyd–Scuseria–Ernzerhof（HSE06） hybrid functional scheme.Calculation results indicate that H2 can be adsorbed on the O2–C = C–O2 defect and the carbon–carbon double bond is converted into a single bond.However,H2 cannot be adsorbed on the O2–（C = C）′ –O2 defect.The NO molecules can be bonded by N and C atoms to transform the carbon–carbon double bonds,thereby passivating the two defects.This study shows that the mechanism for the passivation of Si O2/4 H–SiC（0001） interface carbon dimer defects is to convert the carbon–carbon double bonds into carbon dimers.Moreover,some intermediate structures that can be introduced into the interface state in the band gap should be avoided.

Two-dimensional analysis of the interface state effect on current gain for a 4H-SiC bipolar junction transistor

This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.

Investigation of Interfaces in Remelted A356-SiC Particulate Duralcan Metal Matrix Composite

For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Recent-ly, a commercially produced foundry ingot,the Duralcan composite of A356 Al alloy +20

Modulating doping and interface magnetism of epitaxial graphene on SiC(0001)

On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.

SiC Formation Through Interface Reaction between C_(60) and Si in Plasma Environment

The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.

SiC-Mg INTERFACE OF SiC_p/AZ80 COMPOSITE

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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.

Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO

Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.761011 cm-2 and 0.471011 cm-2 for the N2 post oxidation annealing （POA） sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.791011 cm-2 and 9.441011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses （CVS） reveal that electrons captured by those “slow” NIOTs and bulk oxide traps （BOTs） are hardly emitted by the constant voltage stress.

SiCf/SiC复合材料高温水氧腐蚀性能研究

采用2.5D方式编织SiCf/SiC复合材料预制体,CVI工艺制备PyC界面层,CVI-PIP复合工艺制备SiCf/SiC复合材料基体,在1300℃、50%水汽/50%O 2混合气体的条件下对SiCf/SiC复合材料进行高温水氧腐蚀试验,对SiCf/SiC复合材料在腐蚀前后的相成分变化及微观组织变化进行评价,并探讨了其在高温水氧腐蚀条件下的性能退化机理。结果表明,PyC界面层易被氧化生成气体产物从而留下间隙,该通道为外界腐蚀性气体如水汽、氧气进入复合材料内部侵蚀其纤维、基体等提供捷径。

沉积温度对不同Co含量WC-Co/SiC/Diamond界面结合性能的影响

本文构建了Co质量分数分别为6%、8%、10%和12%的WC-Co/SiC/Diamond金刚石涂层硬质合金界面模型,利用分子动力学方法模拟了不同沉积温度对其界面结合强度的影响,从黏附功及键长分布两个方面进行具体分析。黏附功分析结果表明,与其他三种Co含量界面模型相比,WC-6%Co/SiC/Diamond界面模型在七个沉积温度下所包含的两种界面的黏附功值均为最高值,并且在不同沉积温度下,WC-6%Co/SiC/Diamond界面模型所包含的WC-6%Co/SiC界面、SiC/Diamond界面的黏附功分别在1123、1173 K时最大,为2.468、5.394 J/m^(2)。键长分布概率分析结果表明,与其他三种Co含量界面模型相比,在任一沉积温度下,WC-6%Co/SiC/Diamond界面模型各界面处键长分布范围的最大值较小,且在1123 K时在WC-6%Co基体上沉积SiC中间层,在1173 K时在SiC中间层上沉积Diamond涂层后,该界面模型界面处的键长最短,键能最大,界面结合性能最好。

C/SiC复合材料在典型模拟环境下高温拉伸性能研究

以先驱体浸渍裂解(PIP)工艺制备的C/SiC复合材料为对象,研究了C/SiC复合材料在典型模拟环境下的高温拉伸性能,首次获得了约3 000 s时间不同变状态条件下材料的高温拉伸性能数据,探讨了不同条件下C/SiC复合材料高温承载行为及其变化规律。研究结果表明,C/SiC复合材料经历约3 000 s复杂阶梯热环境后拉伸强度仍保持60%左右;经历大温度梯度热震后,C/SiC复合材料的高温拉伸性能保持率反而提高,最高保持率超过80%;热震温差越大,热震后保温时间越长,对材料的高温拉伸性能保持和提高越有利。

TENSILE PROPERTIES AND INTERFACIAL FEATURE OF SiC COATED C/Al COMPOSITE WIRES UNDER ISOTHERMAL HEAT TREATMENT

The effect of different regimes of heat treatment on the tensile strength of SiC coated composite of C fibers reinforced Al wires has been investigated.Their tensile strength may increase under treatment either at 500℃ for 2h or 550℃ for 1h,but decrease over 600℃.After the strength tests of extracted fibers from composite wires,the SiC coating is an excellent protection to C fibers.EPMA and EDAX showed that the C/Al interface of the composite wires is stable under treatment below 600℃,but unstable at 650℃

热处理对30%SiCp/Al复合材料阻尼性能的影响

采用真空热压烧结法制备30%SiCp/2024Al复合材料以改善2024铝合金的阻尼性能,通过扫描电镜(SEM)、X射线衍射(XRD)、能谱仪(EDS)、高分辨透射电镜(HRTEM)等对复合材料热处理前后的微观组织进行了表征。采用动态热机械分析仪(DMA)研究其热处理前后的阻尼特性。结果表明:热压烧结制备的复合材料界面结合良好,无界面反应,存在许多粗大析出相颗粒,经热处理之后,纳米析出相弥散分布在基体中,可提高复合材料的阻尼性能。30%SiCp/Al复合材料的阻尼性能随温度和应变量的升高而增大,储能模量随温度和应变量的升高而降低。热处理态复合材料中大量弥散的纳米析出相颗粒增加了界面的数量,使界面阻尼增加。复合材料的阻尼机制为位错阻尼、晶界阻尼和界面阻尼。晶界阻尼对温度敏感,大量的界面、晶界可以明显改善复合材料的高温(大于250℃)储能模量,从而改善30%SiCp/Al复合材料的阻尼性能。

SiCf/TC17/GH4169复合材料界面结构和元素扩散研究

采用多组元两步构筑成型方法并结合热等静压技术制备了SiCf/TC17/GH4169复合材料,研究了复合材料界面微观结构组成和元素扩散规律。结果表明,在SiCf/TC17/GH4169复合材料中,SiC纤维保持完整、圆度均匀,纤维和TC17合金形成了连续致密的TiC反应层,TC17钛合金和GH4169发生元素扩散,形成了多个反应层。GH4169中Ni、Fe、Cr扩散进入TC17,形成了TiNi_(3)、Fe Cr、TiNi、Ti_(2)Ni等反应产物,TiNi_(3)和FeCr呈交错分布,TiNi和Ti_(2)Ni各自均呈连续条状分布。TC17和GH4169形成的多个反应层总厚度为25μm,加入TC17过渡组元后,能够改善SiC纤维和GH4169界面相容性,避免纤维被高温合金侵蚀。

SiC纤维表面涂层的制备及其作用研究进展

SiC纤维作为陶瓷基复合材料(CMC)的常见增强体之一,具有较低的密度、较高的拉伸强度以及优良的耐高温和耐氧化性能。在SiC纤维表面制备涂层,不仅可提升纤维本身的力学性能、耐高温性能、抗氧化性能以及电磁功能特性,而且还可有效改善纤维与基体界面的结合性能,提高复合材料的断裂韧性与力学性能。本文首先对SiC纤维表面涂层的制备方法进行了综述,阐述了刻蚀法、沉积法、化学气相渗透法以及先驱体转化法等方法的基本过程及相关研究进展,并对比了不同制备方法的优缺点,然后综述了涂层对SiC纤维及其增强的复合材料的影响,最后对SiC纤维上制备涂层的发展趋势进行了总结归纳,可以采用实验研究与计算仿真相结合的手段来模拟SiC纤维涂层的真实服役环境,并可以通过制备热障复合涂层来提高纤维在极端服役条件下的使用性能。