The study of nanocrystalline SnO2 (n-SnO2) and SiO2-doped SnO2 (n-Si-SnO2) samples pre-pared by the sol-gel process showed that SiO2 doping can effectively restrained the growth of nanocrystalline SnO2 grains, thus im...The study of nanocrystalline SnO2 (n-SnO2) and SiO2-doped SnO2 (n-Si-SnO2) samples pre-pared by the sol-gel process showed that SiO2 doping can effectively restrained the growth of nanocrystalline SnO2 grains, thus improving thermal stability of the materials.展开更多
Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscalin...Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.展开更多
Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel ...Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel method using TiOSO4 as a precursor. The experimental results showed that TiO2 nanopowders on the surface of SiO2 particles were well distributed and compact. The amount of TiO2 increased with the increase in coating layers. The shell structure appeared to be composed of anatase titania nanocrystals at 550℃. The 2-layer coated TiO2 particles on the surface showed a higher degradation rate compared with all the different-layer samples. The photocatalytic activity of Cu^2＋-doped TiO2/SiO2 was higher than that ofundoped TiO2/SiO2. The optimum dopant content was about 0.10wt%.展开更多
Iron（Ⅲ）-doped nanostructure TiO2-coated SiO2 （TiO2/SiO2） particles were prepared using the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized employing...Iron（Ⅲ）-doped nanostructure TiO2-coated SiO2 （TiO2/SiO2） particles were prepared using the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized employing the sol-gel method with TiChas a precursor. The samples were characterized by Fourier transform infrared spectroscopy （FTIR）, SEM, EDS, XPS, and XRD. The experimental results show that TiO2 nanopowders on the surface of SiO2 particles are well distributed, the amount of TiO2 is increased with the adding of coating layers, the pure anatase-TiO2 coating layers are synthesized at 500℃, and the photocatalytic activity of Fe^3＋-doped TiO2/SiO2 is higher than that of undoped TiO2/SiO2.展开更多
A near infrared to visible blue, green, and red upconversion luminescence in a Tb^3＋-doped CaO-Al2O3-SiO2 glass was studied, which was excited using 800 nm femtosecond laser irradiation. The upconversion luminescence...A near infrared to visible blue, green, and red upconversion luminescence in a Tb^3＋-doped CaO-Al2O3-SiO2 glass was studied, which was excited using 800 nm femtosecond laser irradiation. The upconversion luminescence was attributed to ^5D3→^7F5, ^5D3→^7F4, ^5D3→^7F3, ^5D4→^7F6, ^5D4→^7F5, ^5D4→^7F4, and ^5D4→^7F3 transitions of Tb^3＋. The relationship between upconversion luminescence intensity and the pump power indicated that a three-photon simultaneous absorption process was dominant in this upconversion luminescence. The intense red, green, and blue upconversion luminescence of Tb^3＋-doped CaO-Al2O3-SiO2 glass may be potentially useful in developing three-dimensional display applications.展开更多
Al-doped and B, Al-codoped silica xerogel was fabricated by sol-gel process. The influence of B ions and annealing temperature on luminescent properties of phosphors were studied by using fluorescence spectrum, X-ray ...Al-doped and B, Al-codoped silica xerogel was fabricated by sol-gel process. The influence of B ions and annealing temperature on luminescent properties of phosphors were studied by using fluorescence spectrum, X-ray diffraction, DSC, TG/DTG analysis and IR spectrum. The heat treatment has a large effect on the luminescent properties. Under 248 nm excitation, the emission spectrum of samples heated shows characteristic emission peaks of Eu^3＋ ions are, which are due to the transitions of ^5D0→^7FJ（J = 0, 1, 2, 3, 4） of Eu^3＋ , respectively. The transition of ^5D0→^7F1 is split into two peaks.展开更多
The Sm^（3＋）-doped SrO-Al2O3-SiO2（SAS） glass-ceramics with excellent luminescence properties were prepared by batch melting and heat treatment. The crystallization behavior and luminescent properties of the glass-...The Sm^（3＋）-doped SrO-Al2O3-SiO2（SAS） glass-ceramics with excellent luminescence properties were prepared by batch melting and heat treatment. The crystallization behavior and luminescent properties of the glass-ceramics were investigated by DTA, XRD, SEM and luminescence spectroscopy. The results indicate that the crystal phase precipitated in this system is monocelsian（SrAl2Si2O） and with the increase of nucleation/crystallization temperature, the crystallite increases from 66 % to 79 %. The Sm（3＋）-doped SAS glass-ceramics emit green, orange and red lights centered at 565, 605, 650 and 715 nm under the excitation of 475 nm blue light which can be assigned to the 4 G5/2→6 Hj/2（j=5, 7, 9, 11） transitions ofSm^（3＋）, respectively. Besides, by increasing the crystallization temperature or the concentration ofSm^（3＋）, the emission lights of the samples located at 565, 605 and 650 nm are intensified significantly. The present results demonstrate that theSm^（3＋）-doped SAS glassceramics are promising luminescence materials for white LED devices by fine controlling and combining of these three green, orange and red lights in appropriate proportion.展开更多
The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dos...The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。展开更多
SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in th...SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0×1016 to 8.6×1017 C/cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0×1011 Xe/cm2. The new chemical bonds formed in the samples were investigated by use of micro-FTIR spectroscopy. Some parameters were given in Table 1.展开更多
文摘The study of nanocrystalline SnO2 (n-SnO2) and SiO2-doped SnO2 (n-Si-SnO2) samples pre-pared by the sol-gel process showed that SiO2 doping can effectively restrained the growth of nanocrystalline SnO2 grains, thus improving thermal stability of the materials.
基金financially supported by the National Key R&D Program of China (No. 2018YFB1502203-1)the Guangdong Basic and Applied Basic Research Foundation (No. 2021B1515120087)the Stable Supporting Fund of Shenzhen, China (No. GXWD20201230155427003-202007 28114835006)
文摘Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.
基金the Department of Education of Hebei Province, China (No.2005362)
文摘Cu^2＋-doped nanostructured TiO2-coated SiO2 （TiO2/SiO2） particles were prepared by the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized by the sol-gel method using TiOSO4 as a precursor. The experimental results showed that TiO2 nanopowders on the surface of SiO2 particles were well distributed and compact. The amount of TiO2 increased with the increase in coating layers. The shell structure appeared to be composed of anatase titania nanocrystals at 550℃. The 2-layer coated TiO2 particles on the surface showed a higher degradation rate compared with all the different-layer samples. The photocatalytic activity of Cu^2＋-doped TiO2/SiO2 was higher than that ofundoped TiO2/SiO2. The optimum dopant content was about 0.10wt%.
基金the Nationnal Natural Science Foundation of China (No. 50342016).
文摘Iron（Ⅲ）-doped nanostructure TiO2-coated SiO2 （TiO2/SiO2） particles were prepared using the layer-by-layer assembly technique and their photocatalytic property was studied. TiO2 colloids were synthesized employing the sol-gel method with TiChas a precursor. The samples were characterized by Fourier transform infrared spectroscopy （FTIR）, SEM, EDS, XPS, and XRD. The experimental results show that TiO2 nanopowders on the surface of SiO2 particles are well distributed, the amount of TiO2 is increased with the adding of coating layers, the pure anatase-TiO2 coating layers are synthesized at 500℃, and the photocatalytic activity of Fe^3＋-doped TiO2/SiO2 is higher than that of undoped TiO2/SiO2.
基金supported by the Education Department of Zhejiang Province (20050359)
文摘A near infrared to visible blue, green, and red upconversion luminescence in a Tb^3＋-doped CaO-Al2O3-SiO2 glass was studied, which was excited using 800 nm femtosecond laser irradiation. The upconversion luminescence was attributed to ^5D3→^7F5, ^5D3→^7F4, ^5D3→^7F3, ^5D4→^7F6, ^5D4→^7F5, ^5D4→^7F4, and ^5D4→^7F3 transitions of Tb^3＋. The relationship between upconversion luminescence intensity and the pump power indicated that a three-photon simultaneous absorption process was dominant in this upconversion luminescence. The intense red, green, and blue upconversion luminescence of Tb^3＋-doped CaO-Al2O3-SiO2 glass may be potentially useful in developing three-dimensional display applications.
文摘Al-doped and B, Al-codoped silica xerogel was fabricated by sol-gel process. The influence of B ions and annealing temperature on luminescent properties of phosphors were studied by using fluorescence spectrum, X-ray diffraction, DSC, TG/DTG analysis and IR spectrum. The heat treatment has a large effect on the luminescent properties. Under 248 nm excitation, the emission spectrum of samples heated shows characteristic emission peaks of Eu^3＋ ions are, which are due to the transitions of ^5D0→^7FJ（J = 0, 1, 2, 3, 4） of Eu^3＋ , respectively. The transition of ^5D0→^7F1 is split into two peaks.
基金Funded by the National Natural Science Foundation of China(No.5137217)Hubei Province Foreign Science and Technology Project(No.2016AHB027)Science and Technology Planning Project of Hubei Province(No.2014BAA136)
文摘The Sm^（3＋）-doped SrO-Al2O3-SiO2（SAS） glass-ceramics with excellent luminescence properties were prepared by batch melting and heat treatment. The crystallization behavior and luminescent properties of the glass-ceramics were investigated by DTA, XRD, SEM and luminescence spectroscopy. The results indicate that the crystal phase precipitated in this system is monocelsian（SrAl2Si2O） and with the increase of nucleation/crystallization temperature, the crystallite increases from 66 % to 79 %. The Sm（3＋）-doped SAS glass-ceramics emit green, orange and red lights centered at 565, 605, 650 and 715 nm under the excitation of 475 nm blue light which can be assigned to the 4 G5/2→6 Hj/2（j=5, 7, 9, 11） transitions ofSm^（3＋）, respectively. Besides, by increasing the crystallization temperature or the concentration ofSm^（3＋）, the emission lights of the samples located at 565, 605 and 650 nm are intensified significantly. The present results demonstrate that theSm^（3＋）-doped SAS glassceramics are promising luminescence materials for white LED devices by fine controlling and combining of these three green, orange and red lights in appropriate proportion.
文摘The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。
文摘SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0×1016 to 8.6×1017 C/cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0×1011 Xe/cm2. The new chemical bonds formed in the samples were investigated by use of micro-FTIR spectroscopy. Some parameters were given in Table 1.
