The aim of this paper is to investigate water transmissionproperties of two-layer weft knitted fabrics and somerelated factors.The author prepared some experimentalfabrics with specific yarns and stitch densities,and ...The aim of this paper is to investigate water transmissionproperties of two-layer weft knitted fabrics and somerelated factors.The author prepared some experimentalfabrics with specific yarns and stitch densities,and mea-sured water vapor permeating rate through the fabricsand liquid water transferability from inner to outerlayer.Results show that the permeating rate is closelyrelated to porosity within fabric while the transferabilitydepends mainly upon the water absorbabilities of fiberson two layers and the degree or their difference.展开更多
By studying the variations of balloon height and of wind-ing radius in any one winding layer of ring spinning, the formula for determining the winding tension in any layer is derived, and then the overall tension vari...By studying the variations of balloon height and of wind-ing radius in any one winding layer of ring spinning, the formula for determining the winding tension in any layer is derived, and then the overall tension variation throughout all winding layers can be computed. A meth-od of measuring the winding tension is also introduced here, with the measured results agreeing with the com-puted ones, and so the reliable relationship between winding tension, speed and ring traveller weight can be thus obtained. The highest allowable spindle speed is also discussed.展开更多
In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory （NUC-CTM） device with virtua...In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory （NUC-CTM） device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect （SBE） and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM.展开更多
文摘The aim of this paper is to investigate water transmissionproperties of two-layer weft knitted fabrics and somerelated factors.The author prepared some experimentalfabrics with specific yarns and stitch densities,and mea-sured water vapor permeating rate through the fabricsand liquid water transferability from inner to outerlayer.Results show that the permeating rate is closelyrelated to porosity within fabric while the transferabilitydepends mainly upon the water absorbabilities of fiberson two layers and the degree or their difference.
文摘By studying the variations of balloon height and of wind-ing radius in any one winding layer of ring spinning, the formula for determining the winding tension in any layer is derived, and then the overall tension variation throughout all winding layers can be computed. A meth-od of measuring the winding tension is also introduced here, with the measured results agreeing with the com-puted ones, and so the reliable relationship between winding tension, speed and ring traveller weight can be thus obtained. The highest allowable spindle speed is also discussed.
基金Project supported by the National Basic Research Program of China(No.2006CB302700)
文摘In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory （NUC-CTM） device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect （SBE） and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM.
