A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal ...A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal substrate in strong bond.The films have super hardness,excellent resistance to wear and corrosion,etc.Their thickness may be controlled within 5-30 μm.展开更多
The Si_3N_4 thin film is prepared by MWECR-PECVD at different deposition tem-perature and the structure of the Si_3N_4 thin film is investigated. The results indicate that thestructure of the Si_3N_4 thin film prepare...The Si_3N_4 thin film is prepared by MWECR-PECVD at different deposition tem-perature and the structure of the Si_3N_4 thin film is investigated. The results indicate that thestructure of the Si_3N_4 thin film prepared at low deposition temperature is in the amorphousphase. However, when the deposition temperature increases to 280℃, the Si_3N_4 thin film changesto crystalline α-Si_3N_4. With a further increase of the deposition temperature, the grain of theSi_3N_4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure ofthe Si_3N_4 thin film prepared at 280℃ is of a crystalline structure.展开更多
The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation p...The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation period on the microhardness and to elucidate the hardening mechanisms of the synthesized nanomultilayer films. The results showed that the hardness of Si3N4/TiN nano-multilayers is affected not only by modulation period, but also by modulation ratio. The hardness reaches its maximum value when modulation period equa1s a critical value λ0, which is about 12 nm with a modulation ratio of 3: 1. The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures. The hardness of nano-multilayer thin films was found to decrease rapidly with increasing or decreasing modulation period from the Point of λ0. The microstructures of the nano-multilayer films have been investigated using XRD and TEM. Based on experimental results, the mechanism of the superhardness in this system was proposed.展开更多
氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过...氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。展开更多
文摘A superhard α-Si_3N_4 film,deposited on metal substrate,was produced by laser chemical vapor deposition adopting a kW-level high power CO_2 laser.Most films are composed of fine Si_3N_4 partieles.They join the metal substrate in strong bond.The films have super hardness,excellent resistance to wear and corrosion,etc.Their thickness may be controlled within 5-30 μm.
基金The project supported by the Natural Science Foundation of Guangdong province (No. 000675)
文摘The Si_3N_4 thin film is prepared by MWECR-PECVD at different deposition tem-perature and the structure of the Si_3N_4 thin film is investigated. The results indicate that thestructure of the Si_3N_4 thin film prepared at low deposition temperature is in the amorphousphase. However, when the deposition temperature increases to 280℃, the Si_3N_4 thin film changesto crystalline α-Si_3N_4. With a further increase of the deposition temperature, the grain of theSi_3N_4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure ofthe Si_3N_4 thin film prepared at 280℃ is of a crystalline structure.
文摘The polycrystalline Si3N4/TiN ceramic nano-multilayer films have been synthesized on Si substrates by a reactive magnetron Sputtering technique, aiming at investigating the effects of modulation ratio and modulation period on the microhardness and to elucidate the hardening mechanisms of the synthesized nanomultilayer films. The results showed that the hardness of Si3N4/TiN nano-multilayers is affected not only by modulation period, but also by modulation ratio. The hardness reaches its maximum value when modulation period equa1s a critical value λ0, which is about 12 nm with a modulation ratio of 3: 1. The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures. The hardness of nano-multilayer thin films was found to decrease rapidly with increasing or decreasing modulation period from the Point of λ0. The microstructures of the nano-multilayer films have been investigated using XRD and TEM. Based on experimental results, the mechanism of the superhardness in this system was proposed.
文摘氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。
