A novel dual-loop technique was proposed for single-mode selection in an optoelectronic oscillator （OEO）. It consisted of a pump laser and a feedback circuit including an intensity modulator, a Fabry-Perot （FP） et...A novel dual-loop technique was proposed for single-mode selection in an optoelectronic oscillator （OEO）. It consisted of a pump laser and a feedback circuit including an intensity modulator, a Fabry-Perot （FP） etalon, two optical fiber delay lines, two photodetectors, and an amplifier. By inserting the Fabry-Perot etalon, the proposed dual-loop OEO realized a single mode oscillation ranging from 0 Hz to 20 GHz. The strong oscillation mode was present at 15 GHz, and the side modes suppression ratio （SMSR） exceeded 140dB. More over the length of the two fiber loops were just 5 meters and 36 meters.展开更多
光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提...光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。展开更多
文摘A novel dual-loop technique was proposed for single-mode selection in an optoelectronic oscillator （OEO）. It consisted of a pump laser and a feedback circuit including an intensity modulator, a Fabry-Perot （FP） etalon, two optical fiber delay lines, two photodetectors, and an amplifier. By inserting the Fabry-Perot etalon, the proposed dual-loop OEO realized a single mode oscillation ranging from 0 Hz to 20 GHz. The strong oscillation mode was present at 15 GHz, and the side modes suppression ratio （SMSR） exceeded 140dB. More over the length of the two fiber loops were just 5 meters and 36 meters.
文摘光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。
