Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the reg...Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.展开更多
This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give...This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.展开更多
文摘Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
文摘This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.
