Single crystal growth and transport properties of narrow-bandgap semiconductor RhP_(2)

We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP_(2) adopts a monoclinic structure with the cell parameters a=5.7347(10)A,b=5.7804(11)A,and c=5.8222(11)A,space group P2_(1)/c(No.14).The electrical resistivityρ(T)measurements indicate that RhP_(2) exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP_(2) has a high mobilityμ_(e)~210 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_(e)~3.3×10^(18)cm^(3) at 300 K with a narrow-bandgap feature.The high mobilityμ_(e) reaches the maximum of approximately 340 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_^(e)~2×10^(18)cm^(-3)at 100 K.No magnetic phase transitions are observed from the susceptibilityχ(T)and specific heat C_(p)(T)measurements of RhP_(2).Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Microstructural Characterization of the Shear Bands in Fe-Cr-Ni Single Crystal by EBSD

An investigation has been made into the microstructural characterization of the shear bands generated under high-strain rate （≈10^4 s^-1） deformation in Fe-15%Cr-15%Ni single crystal by EBSD-SEM （electron backscatter diffraction-scanning electron microscopy）, TEM （transmission electron in microscopy） and HREM （high- resolution electron microscopy）. The results reveal that the propagation of the shear band exhibits an asymmetrical behavior arising from inhomogenous distribution in plasticity in the bands because of different resistance to the collapse in different crystallographic directions; The γ-ε-α′phase transformations may take place inside and outside the bands, and these martensitic phases currently nucleate at intersections either between the twins and deformation bands or between the twins and ε-sheet. Investigation by EBSD shows that recrystallization can occur in the bands with a grain size of an average of 0.2μm in diameter. These nano-grains are proposed to attribute to the results of either dynamic or static recrystallization, which can be described by the rotational recrystallization mechanism. Calculation and analysis indicate that the strain rate inside the shear band can reach 2.50×10^6 s^-1, which is higher, by two or three orders of magnitude, than that exerted dynamically on the specimen tested.

MORPHOLOGY EVOLUTION IN PTFE AS A FUNCTION OF MELT TIME AND TEMPERATURE——Ⅱ.LOW MOLECULAR WEIGHT FOLDED CHAIN SINGLE CRYSTALS AND BAND STRUCTURES

The effect of sintering dispersed and bulk,low molecular weight(M_n=50,000 Da),nano-emulsionpolytetrafluoroethylene(PTFE)particles near their melting point is described.With the nascent particles consisting of ca.75 nm diameter,hexagonal,single crystals,sintering at,e.g.,350℃,results,initially,in merger of neighboring particles,followed by individual molecular motion on the substrate and the formation of folded chain,lamellar single crystals andspherulites,and on-edge ribbons.It is suggested these structures develop,with time,in the mesomorphic“melt”.Sintering ofthe bulk resin yields extended chain,band structures,as well as folded chain lamellae;end-surface to end-surface merger,possibly by end-to-end polymerization,occurs with increasing time.

Colorless WDM-PON Using Single Side Band Carrier Suppressed Signals Mitigating Carrier Rayleigh Backscattering

A new scheme is offered for minimizing carrier Rayleigh backscattering(CRB) in single feeder fiber based wavelength division multiplexed passive optical network(WDM-PON). The proposed scheme is based on single side band carrier suppressed(SSBCS) signal, both at network and receiver sides, used for the first time at optical line terminal(OLT) and optical network unit(ONU) sides. We use dual-drive Mach-zehnder modulator(DD-MZM) for generating SSB-CS signals, which decreases the expense per bit in full transmission. SSB-CS mitigates CRB, both at OLT and ONU sides, because of having no chance of reflections from the carrier. Since no extra dedicated RF or laser source is used at ONU side, we thus achieve cost effective colorless WDM-PON system. Suppressed signals from four channels, each of 10 Gbps, are multiplexed before injecting into the fiber span of 25 km at OLT. At ONU side, half of the downlink power is used for re-modulating the data signal. The simulation results show an errorfree transmission. Moreover, the detailed power budget calculations show that the proposed scheme can be sought out for splitting ratio up to 128. Hence it offers enough system's margin for unseen losses.

Effectiveness of Bilateral Pulmonary Artery Banding in Patients with Hypoplastic Left Heart Syndrome and Congenital Heart Defects with a Functional Single Ventricle: A Single-Center Retrospective Study

Background:Bilateral banding of the branches of the pulmonary artery in patients with hypoplastic left heart syndrome(HLHS)and other duct dependent critical neonatal heart malformations can significantly reduce the incidence of severe complications in the postoperative period,especially in severely unstable patients.In our study we compared different surgical techniques of bilateral pulmonary artery banding(PAB)in respect to their success in balancing systemic and pulmonary blood flow.Methods:We included 44 neonates with a HLHS and congenital heart diseases(CHD)with a functional single ventricle underwent a hybrid operation:bilateral PAB and patent ductus arteriosus stenting.The hybrid surgery for method No.1 is performed as a one-stage procedure,together with patent ductus arteriosus(PDA)stenting.After median sternotomy,two Gore-Tex 1–2 mm wide bands with a diameter of 3–3.5 mm are put.When we apply method No.2 then the thread is used to create bands.Method No.3 is distinguished by intraoperative assessment of blood flow at the site of narrowing of the branches of the pulmonary artery and optional stenting of the PDA.The cuff for banding is made of Gore-Tex tubing.Effectiveness when applying method Nos.1 and 2 is assessed by the change in invasive blood pressure and oxygen saturation after narrowing of the branches of the pulmonary artery.Also,with these techniques PDA stenting by inserting the introducer via pulmonary artery trunk is performed.Results:HLHS with mitral or aortic valve atresia or both was present in 19 patients(43.1%),with severe left heart obstruction resulting in PDA dependent systemic circulation in 16 babies(36.4%).CHD with single ventricle physiology occurred in 9 patients(20.5%).14 babies(31.8%)undergo the procedure following the method No.1,8 patients(18.2%)method No.2 and 22 patients(50%)method No.3.Qp/Qs=1/1 was achieved in 30 patients(30/44,68.1%):as a result of the method No.1 was achieved in 5 patients(5/14,35.7%),method No.2 in 4 patients(4/8,50%),method No.3 in 21 patients(21/22,95.5%).Multivariate regression analysis revealed that method No.3 significantly increases the chances of hemodynamic efficacy operations(OR=35.0;p=0.005;CI(95%)3–411.5).Conclusion:Application of the operation technique No.3 in combination with the intraoperative assessment of blood flow parameters at the site of banding of the branches of the pulmonary artery are the most optimal criteria for achieving Qp/Qs=1/1.If there are signs of restriction at the level of the foramen ovale,atrioseptostomy should be done in the second stage after bilateral pulmonary banding.

Band Gaps and Single Scattering of Phononic Crystal

A method is introduced to study the transmission and scattering properties of acoustic waves in two–dimen- sional phononic band gap (PBG) materials. First, it is used to calculate the transmission coefficients of PBG samples. Second, the transmitted power is calculated based on the far field approach. We have also calcu- lated the scattering cross section, the results indicate that phononic band gap appear in frequency regions between two well separated resonance states.

Single-Channel Speech Enhancement Using Critical-Band Rate Scale Based Improved Multi-Band Spectral Subtraction

This paper addresses the problem of single-channel speech enhancement in the adverse environment. The critical-band rate scale based on improved multi-band spectral subtraction is investigated in this study for enhancement of single-channel speech. In this work, the whole speech spectrum is divided into different non-uniformly spaced frequency bands in accordance with the critical-band rate scale of the psycho-acoustic model and the spectral over-subtraction is carried-out separately in each band. In addition, for the estimation of the noise from each band, the adaptive noise estimation approach is used and does not require explicit speech silence detection. The noise is estimated and updated by adaptively smoothing the noisy signal power in each band. The smoothing parameter is controlled by a-posteriori signal-to-noise ratio (SNR). For the performance analysis of the proposed algorithm, the objective measures, such as, SNR, segmental SNR, and perceptual evaluations of the speech quality are conducted for the variety of noises at different levels of SNRs. The speech spectrogram and objective evaluations of the proposed algorithm are compared with other standard speech enhancement algorithms and proved that the musical structure of the remnant noise and background noise is better suppressed by the proposed algorithm.

Proposal of Single Sideband Modulation Scheme Using Frequency Domain Filtering

With the rapid development of wireless systems,the demand for frequency resources has been increasing in recent years.Therefore,it is necessary to consider the high-quality communication method that efficiently utilizes finite frequency resources.In this paper,Single Sideband 16 Pulse Amplitude Modulation(SSB 16PAM)scheme for the uplink communication is proposed.It transmits data in only Lower Sideband(LSB)without extra Hilbert components.Under Additive White Gaussian Noise(AWGN)channel environment,Bit Error Rate(BER)performance of the proposed scheme is superior by 3 dB in terms of Carrier-to-Noise Ratio(CNR)to 256 Quadrature Amplitude Modulation(256QAM)scheme with the same frequency efficiency and the same Peak-to-Average Power Ratio(PAPR).Our proposed scheme employs the original frequency domain filter on the transmitter side to form an ideal spectrum.The configuration of its process is almost similar to Single Carrier-Frequency Division Multiple Access(SC-FDMA),moreover,half of the input data on the frequency domain is removed.The proposed frequency domain filter produces the SSB-modulated spectrum with a roll-off rate of zero without degrading the BER performance.

Intersubband transitions in Al_(0.82)In_(0.18)N/GaN single quantum well

The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p^m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.

The system of L-band 2 × 10 Gb/s WDM transmission over conventional single mode fibre with 600 km by chirped fibre Bragg gratings dispersion compensation

A chirped fibre Bragg grating according to ITU-T suggested L-band （2nd channel λ1 = 1570.83 nm; 80th channel λ2 = 1603.57 nm） with more than 1800 ps/nm single channel dispersion compensation is presented in this paper, of which the cladding mode loss, the delay curve ripple and the power fluctuation of the reflected spectrum are less than 0.5 dB, 50 ps and 0.25 dB, respectively. With this new FBG as dispersion compensation device, a 2 × 10 Gb/s wavelength division multiplexing （WDM） L-band transmission of 600 km based on conventional single mode fibre （G.652 fibre） is performed without forward error correction. The bit error rate （BER） is less than 10-12 and the power penalties of the 2nd and 80th channel of L-band are 1.8 dB and 2.0 dB, respectively.

Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot

Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate（PPLN） waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g^（（2））（0）, only 0.22 at 1552 nm.This present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.

Single crystal growth, structural and transport properties of bad metal RhSb2

We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62 × 10^(18) cm^(-3) at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb_2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.

Detection of the spatiotemporal field of a single-shot terahertz pulse based on spectral holography

According to electro-optical sampling theory, we propose a new method to detect the spatiotemporal field of a single- shot terahertz pulse by spectral holography for the first time. The single-shot terahertz pulse is coupled into a broadened chirped femtosecond pulse according to electro-optical sampling theory in the detecting system. Then the reference wave and the signal wave are split by Dammann grating and spread into the interference band-pass filter. The filtered sub-waves are at different central-frequencies because of the different incident angles. These sub-waves at different central-frequencies interfere to form sub-holograms, which are recorded in a single frame of a charge coupled device （CCD）. The sub-holograms are numerically processed, and the spatiotemporal field distribution of the original terahertz pulse is reconstructed. The computer simulations verify the feasibility of the proposed method.

Optical Characterization of (TMA)₂ZnCl₄Single Crystals in the Normal Phase

The transmittance (T) and the reflectance (R) were measured for (TMA)2ZnCl4 single crystals and hence the absorption coefficient (α), extinction coefficient (Kex.), refractive index (n), real and im-aginary dielectric constants (ε', ε") of (TMA)2ZnCl4 crystals were calculated as a function of photon energy. The analysis of the spectra behavior of the absorption coefficient in the absorption region revealed indirect transition. The dispersion of the refractive index is discussed in terms of the sin-gle oscillator Wemple-DiDomenico model. The single oscillator energy (E0), the dispersion energy (Ed), the lattice dielectric constant (εL) and the ratio of free charge carrier concentration to the ef-fective mass (N/m*) were estimated. The FTIR spectra were recorded to study the functional groups of the as grown and annealed samples.

Single link tracking scheme based on UWB localization

To investigate the low-complex and high-precise tracking method, a novel single link tracking scheme based on UWB localization is proposed. Two antenna arrays are settled at the fixed station （FS） to receive the UWB signal from mobile terminal （MT）, one FS is enough for the proposed scheme to track the MT. The UWB multipath detection algorithm for time difference of arrival （TDOA） estimation is presented and TDOA is thus adopted to estimate angle of arrival （AOA）, avoiding the synchronization and complicated beamforming for AOA. The impacts of localization errors, concluding multipath and non-line-of-sight （NLOS） errors are simulated for the proposed track scheme. It is demonstrated that the simulation curve can match the real target moving, and the feasibility of the proposed scheme is proved.

基于高阶幂的单快拍LDACS系统波达方向估计

L波段数字航空通信系统(L band digital aeronautical communication system,LDACS)是未来航空宽带通信重要的基础设施之一,针对LDACS信号容易受到相邻波道大功率测距仪(distance measuring equipment,DME)信号干扰的问题,提出了联合正交投影干扰抑制与单快拍稀疏分解的波达方向(direction of arrival,DOA)估计方法。通过子空间投影抑制DME干扰,然后使用单快拍数据构建伪协方差矩阵,对伪协方差矩阵求高阶幂,之后进行奇异值分解,并利用约束条件求解稀疏解得到期望信号来向的估计值。所提方法使用高阶伪协方差矩阵降低了噪声影响,仅用单快拍就可以准确估计LDACS信号的入射方向。仿真结果表明,改进单快拍高级幂(improved single snapshot high order power,ISS-HOP)L1-SVD算法的估计精度优于ISS-HOP-MUSIC算法。该方法可以有效抑制DME干扰,提高OFDM接收机性能。

基于单传感器的三波段共口径光学系统设计

针对现有多波段成像系统体积大、功耗高和集成化设计困难的问题,本文提出了一种基于单传感器的三波段共口径成像光学系统的设计方法。首先,在光学系统的光阑处设计1×2多波段透镜阵列,把可见光波段和短波红外波段同时成像在一个像平面上,并把两个波段中心波长的成像位置偏差控制在一个像元内以实现双波段融合成像。然后,针对双波段成像衍射极限不同的问题,提出分通道透镜阵列的离轴偏移量和通光口径大小联合优化方法,并采用双电动光阑高速控制三个成像通道的切换速度。最后,设计了一个基于单传感器的焦距为30 mm,工作波段分别为480~900 nm、900~1700 nm和480~1700 nm的三波段共口径光学系统。设计及分析结果表明该系统具有成像质量好、结构紧凑、无运动光学元件、成像波段切换速度快等优点。

Ku/Ka/W三频段单馈源反射面天线设计

为了简化多频段反射面天线的整体结构与体积,设计一个结构简单的三频段馈源,采用单腔体的形式而非复杂的共轴嵌套式或填充介质等方法,以此来精简整个馈源的设计与加工。为了在Ku/Ka两个相近低频段获得较好的隔离度,分别设计了两个低通的三阶滤波器。使用ANSYS HFSS电磁仿真软件进行Ku/Ka/W三频段单馈源反射面天线设计和优化分析。实际测量时,馈源三个端口的S参数采用矢量网络分析仪测得,馈源及反射面天线系统的增益则在暗室中测量得到。天线仿真设计和实测结果表明,在Ku/Ka/W三个常用频段,即14.5~15.5 GHz、34.5~35.5 GHz及93~95 GHz频率范围内,天线的电压驻波比均小于1.3,各个端口隔离度优于40 dB,具有代表性的三个中心频率点14.5 GHz、35 GHz、94 GHz的天线增益分别为30.5 dBi、34.6 dBi和39.7 dBi,交叉极化优于-23.9 dB,旁瓣电平优于-21.6 dB。所设计的反射面天线实现了频段跨度接近6.5∶1的Ku/Ka/W三频段特性。

一种L~U波段RF MEMS单刀十掷开关的设计

论文提出了一种适用于1GHz~60GHz频段的RF MEMS单刀十掷开关。该开关采用三角形上电极结构,以减小悬臂梁等效弹性系数和闭合接触面积,达到低驱动电压、高隔离度的目的。通过渐进传输线结构,改善阶跃补偿引起的信号损耗问题。仿真结果显示:该单刀十掷开关的驱动电压为13V,在1GHz~60GHz频段范围内,输入端两侧输出端口的插入损耗<2dB,其余八个端口插入损耗≤0.59dB,所有端口隔离度均>30dB。此开关可适用于无线通信系统、雷达系统和仪器测量系统等对射频性能要求高的领域内。