Single-event burnout hardening of planar power MOSFET with partially widened trench source

We present a single-event burnout（SEB） hardened planar power MOSFET with partially widened trench sources by three-dimensional（3 D） numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region（P-well region below the N＋ source）. The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer（LET）,which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.

An online fast multi-track locating algorithm for high-resolution single-event effect test platform

To improve the efficiency and accuracy of single-event effect(SEE)research at the Heavy Ion Research Facility at Lanzhou,Hi’Beam-SEE must precisely localize the position at which each heavy ion hitting the integrated circuit(IC)causes SEE.In this study,we propose a fast multi-track location(FML)method based on deep learning to locate the position of each particle track with high speed and accuracy.FML can process a vast amount of data supplied by Hi’Beam-SEE online,revealing sensitive areas in real time.FML is a slot-based object-centric encoder-decoder structure in which each slot can learn the location information of each track in the image.To make the method more accurate for real data,we designed an algorithm to generate a simulated dataset with a distribution similar to that of the real data,which was then used to train the model.Extensive comparison experiments demonstrated that the FML method,which has the best performance on simulated datasets,has high accuracy on real datasets as well.In particular,FML can reach 238 fps and a standard error of 1.6237μm.This study discusses the design and performance of FML.

Virtual reality for preoperative patient education: Impact on satisfaction, usability, and burnout from the perspective of new nurses

BACKGROUND Traditional paper-based preoperative patient education is a struggle for new nurses and requires extensive training.In this situation,virtual reality technology can help the new nurses.Despite its potential benefits,there are studies on patient satisfaction but there is limited information on the usability of virtual reality(VR)technology for new nurses in giving preoperative education to patients.AIM To investigate the impact on satisfaction,usability,and burnout of a system using VR technology in preoperative patient education.METHODS The study involved 20 nurses from the plastic surgery ward and 80 patients admitted between April and May 2019.Each nurse taught four patients:Two using traditional verbal education and two using virtual reality.The System Usability Scale,After-Scenario Questionnaire,and Maslach Burnout Inventory(MBI)were employed to evaluate the impact of these education methods.RESULTS The VR education groups showed a statistically higher satisfaction than the traditional verbal education groups.Among the three subscales of the MBI,emotional exhaustion and personal accomplishment improved statistically significantly.VR was also better in terms of usability.CONCLUSION This study suggests VR enhances usability and reduces burnout in nurses,but further research is needed to assess its impact on depersonalization and objective measures like stress and heart rate.

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Maternal Burnout: Prevalence and Associated Factors in Northern Benin (2023)

Introduction: Also known as maternal burnout syndrome, maternal burnout is a state of physical, emotional and mental exhaustion generated by prolonged stress in the family environment. It is experienced by women in their role as mothers. Those affected can develop psychological disorders, sleep disturbances, etc., all of which impair their day-to-day lives, and thus their maternal role. The repercussions affect both the child and other family members. Objective: The aim of the present study was to investigate maternal burnout among female users of public and private health facilities in the commune of Parakou in 2023. Methods: Descriptive cross-sectional study was conducted from December 2022 to July 2023 among all mothers using public and private health facilities in the commune of Parakou. All healthy mothers with at least one biological or adoptive child fully dependent on them and living at home, who came for a consultation in one of the health facilities or for an appointment at the Expanded Program on Immunization (EPI) and gave their free and informed consent. Sampling was done for non-exhaustive convenience were included in the study. Burnout was assessed using the Parental Burnout Assessment (PBA) scale. Results: A total of 888 mothers meeting the inclusion criteria were surveyed. The prevalence of burnout calculated using the Parental Burnout Assessment (PBA) scale was 6.19%. The risk factors for maternal burnout were poor relationships with family and friends (OR = 8.90;p = 0.045), moderate (OR = 11.71;p = 0.020) and severe depression (OR = 40.85;p = 0.001), followed by the presence of repeated nocturnal awakening (OR = 5.14;p = 0.014). Conclusion: This is a subject that is almost never discussed in African society, but whose reality is revealed by the present study, which provided statistical data on maternal burnout. From now on, the risk of burnout will no longer be discussed solely in the family context. It will also need to be explored within the family unit to prevent its deleterious consequences for children and adults alike.

The Influence of Preschool Teachers’Social Skills on Job Burnout:A Moderated Mediation Model

Background:Teacher burnout is a serious issue in the field of education,particularly in early childhood education,where teachers face high levels of work stress and emotional labor,leading to emotional exhaustion and job burnout.However,past research has not sufficiently explored the mechanisms of social skills,empathy,and mindfulness in mitigating teacher burnout.Therefore,this study aims to investigate the relationship between preschool teachers’social skills,empathy,and mindfulness with job burnout,in order to provide theoretical basis and practical guidance for reducing teacher burnout.Methods:This research utilized a convenience sampling approach to target preschool teachers for a questionnaire survey.A total of 1109 questionnaires were collected.To ensure the quality of the data,we excluded questionnaires that were not carefully filled out in terms of lie scale questions,those with abnormal demographic variables,and outliers identified based on response time.Ultimately,901 valid questionnaires were obtained,achieving a valid response rate of 81.2%.Participants’levels of social skills,empathy,mindfulness,and job burnout were assessed using the Social Skills Scale(SKS),Empathy Scale(Measure of Empathy,ME),Mindful Attention Awareness Scale(MAAS),and the Maslach Burnout Inventory-Educators Survey(MBI-ES),respectively.Data analysis was conducted using SPSS.Results:After controlling for gender,age,teaching experience,educational level,grade taught,and location of the kindergarten,the study found:(1)There is a negative correlation between preschool teachers’social skills and the level of job burnout(r=−0.238);(2)Empathy has a dual-track effect on job burnout,where cognitive empathy negatively affects job burnout(r=−0.245),while emotional empathy has a positive effect(r=0.045);(3)Cognitive empathy partially mediates the relationship between social skills and job burnout(β=−0.124);(4)Mindfulness significantly impacts social skills,cognitive empathy,and job burnout(r=0.278;r=0.286;r=−0.539),and plays a moderating role in the mediation model(β=0.003;β=−0.023).Conclusion:These findings provide theoretical support for the development of burnout prevention and intervention strategies targeted at preschool teachers.They also point out new directions for future research and potential intervention targets,suggesting that enhancing preschool teachers’social skills and cognitive empathy,as well as increasing their mindfulness level,can help them cope with work-related stress and emotional labor,thereby alleviating job burnout.

A Study of the Relationship between Emotion Regulation and Job Burnout among Junior High School Novice English Teachers

This study aimed to examine the relationship between junior high school novice English teachers’emotion regulation and job burnout.To achieve this purpose,a survey consisting of various scales was administered to 133 primary school teachers selected from Yunnan Province in China.Statistical analyses revealed gender differences in job burnout and emotion regulation among these teachers and highlighted the association between these two variables.The findings established that male novice English teachers in junior schools generally experience lower levels of job burnout and possess better emotion regulation skills compared to their female counterparts.Additionally,a strong negative correlation was identified between job burnout and emotional regulation skills,indicating that the stronger the emotional regulation skills,the less likely novice English teachers are to experience job burnout.The study further emphasized caution in the use of cognitive reappraisal as an emotion regulation strategy,as it may have an adverse effect on mitigating job burnout.This study concluded with recommendations for providing junior high school novice English teachers with opportunities to develop and enhance their emotion regulation skills to reduce job burnout effectively.

The Influence of Swimming Athletes’ Burnout on Their Sports Participation Motivation in Hunan, China

Objective:This study aims to explore the effect of swimming athletes’burnout on their sports motivation in Hunan University,China.It seeks to understand how burnout influences various motivational factors,providing insights for optimizing swimming sports courses and enhancing student participation.Method:Employing random sampling,the study surveyed 260 swimming athletes from Hunan University.The research utilized a questionnaire divided into three parts:demographic information,the Athlete Burnout Questionnaire(ABQ),and the Intrinsic Motivation Inventory(IMI).Pearson’s r correlation analysis was conducted using SPSS to examine the relationships between burnout dimensions and motivational factors.Results:The study found significant correlations between a reduced sense of accomplishment and various motivational dimensions,including“interest/enjoyment,”“perceived competence,”“perceived choice,”and particularly“perceived tension.”Physical exhaustion showed a significant correlation only with“perceived tension,”indicating a strong link between psychological stress and physical fatigue.Sports devaluation was significantly correlated with“perceived tension,”suggesting that psychological stress impacts athletes’valuation of their sport.Conclusion:The findings highlight the complex interplay between burnout and motivation in swimming athletes.Psychological stress,as indicated by“perceived tension,”emerges as a key factor influencing both the physical and emotional aspects of burnout.The study underscores the need for holistic training approaches that balance physical training with psychological well-being,personalized coaching,and supportive environments to enhance intrinsic motivation and manage stress effectively.

Investigation of maximum proton energy for qualified ground based evaluation of single-event effects in SRAM devices

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.

Single-event effects induced by medium-energy protons in 28 nm system-on-chip

Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,respectively.Single-bit upset and multicell upset events were observed,and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test.The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar.Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed,and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm^2 mg^-1.The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.

Prototype of single-event effect localization system with CMOS pixel sensor

The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm.

Analysis of single-event transient sensitivity in fully depleted silicon-on-insulator MOSFETs

Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.

Single-event-effect propagation investigation on nanoscale system on chip by applying heavy-ion microbeam and event tree analysis

The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locations and cross sections,for instance,the arithmetic logic unit,register,D-cache,and peripheral,while irradi-ating the on-chip memory(OCM)region.Moreover,event tree analysis was executed based on the obtained microbeam irradiation results.This study quantitatively assesses the probabilities of SEE propagation from the OCM to other blocks in the SoC.

Catalytic Cracking of Cycloparaffins Admixed with Olefins:1. Single-Event Microkinetic(SEMK) Modeling

Single-event microkinetic(SEMK) model of the catalytic cracking of methylcyclohexane admixed with 1-octene over REUSY zeolites at 693 K—753 K in the absence of coke formation is enhanced. To keep consistency with the wellknown carbenium ion chemistry, hydride transfer forming and consuming allylic carbenium ions in the aromatization of cycloparaffins are further investigated and differentiated. The reversibility of endocyclic β-scission and cyclization reactions is refined by accounting explicitly for the reacting olefins and resulting cycloparaffins in the corresponding thermodynamics. 24 activation energies for the reactions involved in the cracking of cycloparaffins are obtained by the regression of 15 sets of experimental data upon taking the resulting 37 main cracking products, i. e., responses into account. The enhanced SEMK model can adequately describe the catalytic behavior of 37 main products with conversion and temperature.

Scaling effects of single-event gate rupture in thin oxides

The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period （1 2 nm to 3.3 nm）, and then increases a little when the gate oxide becomes thinner and thinner （3.3 nm to 1.8 nm）.

Catalytic Cracking of Cycloparaffins Admixed with Olefins:2. Single-Event Microkinetic(SEMK) Assessment

The developed SEMK model is used to provide an insight into the contribution of individual reactions in the cracking of methylcyclohexane as well as the site coverage by various carbenium ions. The preferred reaction pathways for the conversion of methylcyclohexane are hydride transfer reactions followed by PCP-isomerizations, deprotonation and endocyclic β-scission, accounting for 61%, 22% and 12% of its disappearance, respectively, at 693 K and 30% conversion of methylcyclohexane. Protolysis plays a minor role in the cracking of methylcyclohexane. Once cyclic diolefins are formed, all of them can be instantaneously transformed to aromatics, which are easily interconverted via disproportionation. Judging from the carbenium ion concentrations it is evident that, at the investigated operating conditions, less than 5% of the acid sites are covered by carbenium ions, less than 2% of which corresponds to cyclic type species including allylic ones.

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.

Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

Development of Contactless Method of the DUT Heating during Single-Event Effect Tests

This paper presents two approaches to perform the electronic device heating during radiation hardness assurance tests.Commonly used conductive heating approach is compared with contactless laser-based approach,characteristics and limitations of these methods are described.Experimental results for temperature dependence of single-event latchup(SEL)cross-section during heavy ion irradiation along with some aspects of physics-based numerical simulation of heat transfer processes are presented.