Largescale vaporsolid synthesis of ultralong silicon nitride （Si3N4） nanowires was achieved by using simple thermal evaporation of mixture powders of active carbon and monoxide silicon. The products were charac teri...Largescale vaporsolid synthesis of ultralong silicon nitride （Si3N4） nanowires was achieved by using simple thermal evaporation of mixture powders of active carbon and monoxide silicon. The products were charac terized by Xray diffraction, scanning electron microscopy, energydispersive Xray spectroscopy, and transmission electron microscopy. The results suggest that the silicon nitride nanowires have a smooth surface, with lengths of up to several hundreds of microns and diameters of 100300 nm. A detailed study of both the chemical and structural composition was performed. Such ultralong sil icon nitride nanowires demonstrate potential applications as materials for constructing nanoscale devices and as reinforcement in advanced composites.展开更多
Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XP...Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.展开更多
Under conditions of electric-arc low-temperature plasma (LTP), ultra-finely dis- persed Si3N4 particles have been synthesized by using silicon powder and nitrogen as raw materi- als. The prepared samples are character...Under conditions of electric-arc low-temperature plasma (LTP), ultra-finely dis- persed Si3N4 particles have been synthesized by using silicon powder and nitrogen as raw materi- als. The prepared samples are characterized by X-ray diffraction (XRD), scanning electron spec- troscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The result indicates that the basic phase in Si3N4 produced is α- and β-Si3N4. The particle size of Si3N4 sample is in the range of 30-500 nm.展开更多
基金supported by the Key Program of the National Natural Science Foundation of China(No.19934003)the Grand Program of Natural Science Research of Anhui Education Department(No.ZD2007003-1)+1 种基金the Natural Science Research Program of Universities and Colleges of Anhui Province(No.KJ2008A19ZC)the Opening Program of Cultivating Baseof Anhui Key Laboratory of Spintronics and Nano-materials(No.2012YKF10)
文摘Largescale vaporsolid synthesis of ultralong silicon nitride （Si3N4） nanowires was achieved by using simple thermal evaporation of mixture powders of active carbon and monoxide silicon. The products were charac terized by Xray diffraction, scanning electron microscopy, energydispersive Xray spectroscopy, and transmission electron microscopy. The results suggest that the silicon nitride nanowires have a smooth surface, with lengths of up to several hundreds of microns and diameters of 100300 nm. A detailed study of both the chemical and structural composition was performed. Such ultralong sil icon nitride nanowires demonstrate potential applications as materials for constructing nanoscale devices and as reinforcement in advanced composites.
基金Acknowledgements： This work Was supported by National Natural Science Foundation of China （No. 50472101）, Foundation of Science and Technology of CAEP （No. 20050864） and Foundation for Key Applied Basis Project of Sichuan Province （No. 05JY029-112）.
文摘Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.
基金This work was supported by Foundation for University Key Teacher of Ministry of Education of China No. D 19902.
文摘Under conditions of electric-arc low-temperature plasma (LTP), ultra-finely dis- persed Si3N4 particles have been synthesized by using silicon powder and nitrogen as raw materi- als. The prepared samples are characterized by X-ray diffraction (XRD), scanning electron spec- troscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The result indicates that the basic phase in Si3N4 produced is α- and β-Si3N4. The particle size of Si3N4 sample is in the range of 30-500 nm.
