Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Effects of 946-nm thermal shift and broadening on Nd^(3+):YAG laser performance

Spectroscopic properties of flashlamp pumped Nd^3＋：YAG laser are studied as a function of temperature in a range from-30℃ to 60℃. The spectral width and shift of quasi three-level 946.0-nm inter-Stark emission within the respective intermanifold transitions of ^4F3/2→^4I9/2are investigated. The 946.0-nm line shifts toward the shorter wavelength and broadens. In addition, the threshold power and slope efficiency of the 946.0-nm laser line are quantified with temperature.The lower the temperature, the lower the threshold power is and the higher the slope efficiency of the 946.0-nm laser line is,thus the higher the laser output is. This phenomenon is attributed to the ion-phonon interaction and the thermal population in the ground state.

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In（0.05） Ga（0.95）N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.

PM567-Doped solid dye lasers based on PMMA

Polymers are a kind of attractive hosts for laser dyes due to their high transparency in both pumping and lasing ranges and superior optical homogeneity. In this paper solid dye samples based on polymethyl methacrylate （PMMA） doped with different concentrations of 1, 3, 5, 7, 8 -pentamethyl-2, 6-diethylpyrromethene-BF2 （PM567） are prepared. The absorption, fluorescence and lasing spectra of the samples are obtained. Wide absorption and fluorescence bands are obtained and a red shift of the maxima of the lasing emission spectra is observed. With the second-harmonic generation of Q-switched Nd：YAC laser （532 nm, -20 ns） pumping the samples longitudinally, the slope efficiencies of the samples are obtained. There is an optimal dye concentration for the highest slope efficiency when the pumping energy is lower than some typical value （-250 mJ）, and the highest slope efficiency 35.6% is obtained in the sample with a dye concentration of 2 × 10^-4 mol/L. Pumping the samples at a rate of 10Hz with a pulse energy as high as 200 mJ （the fluence is 0.2 J/cm^2）, the output energy drops to one-half of its initial value after approximate 15500 pulses and the normalized photostability is 5.17CJ/mol. A kind of solid dye laser which could have some applications is built.