The development of insertion-type anodes is the key to designing“rocking chair”zinc-ion batteries.However,there is rare report on high mass loading anode with high performances.Here,{001}-oriented Bi OCl nanosheets ...The development of insertion-type anodes is the key to designing“rocking chair”zinc-ion batteries.However,there is rare report on high mass loading anode with high performances.Here,{001}-oriented Bi OCl nanosheets with Sn doping are proposed as a promising insertion-type anode.The designs of cross-linked CNTs conductive network,{001}-oriented nanosheet,and Sn doping significantly enhance ion/electron transport,proved via experimental tests and theoretical calculations(density of states and diffusion barrier).The H^(+)/Zn^(2+)synergistic co-insertion mechanism is proved via ex situ XRD,Raman,XPS,and SEM tests.Accordingly,this optimized electrode delivers a high reversible capacity of 194 m A h g^(-1)at 0.1 A g^(-1)with a voltage of≈0.37 V and an impressive cyclability with 128 m A h g^(-1)over 2500 cycles at 1 A g^(-1).It also shows satisfactory performances at an ultrahigh mass loading of 10 mg cm^(-2).Moreover,the Sn-Bi OCl//MnO_(2)full cell displays a reversible capacity of 85 m A h g^(-1)at 0.2 A g^(-1)during cyclic test.展开更多
The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-...The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.展开更多
Sn-doped In2O3 (ITO) nanopowders were prepared in ethanol solvent by solvothermal process. The effects of the solvothermal temperature, coprecipitation pH value and SnO2 content on the products phase and microwave abs...Sn-doped In2O3 (ITO) nanopowders were prepared in ethanol solvent by solvothermal process. The effects of the solvothermal temperature, coprecipitation pH value and SnO2 content on the products phase and microwave absorption were investigated by X-ray diffractometry and microwave reflectance. ITO nanopowders with cubic structure can be respectively prepared at 250 and 270 ℃ for 6 h. The prepared product is InOOH or the mixture of InOOH and In3Sn4O12 when the solvothermal temperature is below 250℃. With rising solvothermal temperature and prolonging time, the absorption of the ITO powders gradually decreases. The products are ITO nanopowders by coprecipitating at pH=9 or 11, but ITO powders with Sn3O4 at pH=6. The absorption of powders prepared at pH=6 is better than that at any other pH value. The products are all ITO nanopowders and crystal size reduces with increasing SnO2 content. The microwave absorption of ITO nanopowders with SnO2 content of 8% (mass fraction) is the best among samples with different SnO2 contents.展开更多
基金supported by the Natural Science Foundation of China (52102312,51672234,and 52072325)the Natural Science Foundation of Hunan Province of China (2021JJ40528)+2 种基金the China Postdoctoral Science Foundation (2020M682581)the Macao Young Scholars Program (AM2021011)the College Student Innovation and Entrepreneurship Training Program (S202210530051)。
文摘The development of insertion-type anodes is the key to designing“rocking chair”zinc-ion batteries.However,there is rare report on high mass loading anode with high performances.Here,{001}-oriented Bi OCl nanosheets with Sn doping are proposed as a promising insertion-type anode.The designs of cross-linked CNTs conductive network,{001}-oriented nanosheet,and Sn doping significantly enhance ion/electron transport,proved via experimental tests and theoretical calculations(density of states and diffusion barrier).The H^(+)/Zn^(2+)synergistic co-insertion mechanism is proved via ex situ XRD,Raman,XPS,and SEM tests.Accordingly,this optimized electrode delivers a high reversible capacity of 194 m A h g^(-1)at 0.1 A g^(-1)with a voltage of≈0.37 V and an impressive cyclability with 128 m A h g^(-1)over 2500 cycles at 1 A g^(-1).It also shows satisfactory performances at an ultrahigh mass loading of 10 mg cm^(-2).Moreover,the Sn-Bi OCl//MnO_(2)full cell displays a reversible capacity of 85 m A h g^(-1)at 0.2 A g^(-1)during cyclic test.
基金Project supported by the Science and Technology Program of Guangdong Province,China(Grant No.2015B010112002)the Science and Technology Project of Guangzhou City,China(Grant No.201607010250)
文摘The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.
基金Project(2001BA901A09) supported by the National Western Development and Technique Foundation during the 10th Five-Year PlaPeriod
文摘Sn-doped In2O3 (ITO) nanopowders were prepared in ethanol solvent by solvothermal process. The effects of the solvothermal temperature, coprecipitation pH value and SnO2 content on the products phase and microwave absorption were investigated by X-ray diffractometry and microwave reflectance. ITO nanopowders with cubic structure can be respectively prepared at 250 and 270 ℃ for 6 h. The prepared product is InOOH or the mixture of InOOH and In3Sn4O12 when the solvothermal temperature is below 250℃. With rising solvothermal temperature and prolonging time, the absorption of the ITO powders gradually decreases. The products are ITO nanopowders by coprecipitating at pH=9 or 11, but ITO powders with Sn3O4 at pH=6. The absorption of powders prepared at pH=6 is better than that at any other pH value. The products are all ITO nanopowders and crystal size reduces with increasing SnO2 content. The microwave absorption of ITO nanopowders with SnO2 content of 8% (mass fraction) is the best among samples with different SnO2 contents.
