SnSe has attracted extensive attention due to its ultralow thermal conductivity and excellent thermoelectric properties.In this work,pressure-induced thermoelectric properties of Pnma SnSe are investigated via first-p...SnSe has attracted extensive attention due to its ultralow thermal conductivity and excellent thermoelectric properties.In this work,pressure-induced thermoelectric properties of Pnma SnSe are investigated via first-principles calculations.We uncover distinct energy isosurfaces topology transition of conduction band by applying pressure.The newly created conduction band valley caused by pressure has a distinct anisotropic shape compared to the old one.Inducing pressure can greatly enhance the anisotropy of electronic transport properties of the n-type Pnma SnSe.Furthermore,the lattice thermal conductivity also exhibits anisotropic behavior under pressure due to a special collaged phonon mode.The pressure-induced lattice thermal conductivity along the a-axis shows a slower growth trend than that along the b-axis and c-axis.The optimal ZT value of the n-type Pnma SnSe along the a-axis can reach 1.64 at room temperature.These results would be helpful for designing the Pnma SnSe-based materials for the potential thermoelectric and valleytronic applications.展开更多
The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing a...The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing agent (trisodium citrate) at room temperature under ambient air. The product was characterized by X-ray diffraction (XRD), transmission electron microscopoy (TEM) and X-ray photoelectron spectroscopy (XPS). The results reveal that the SnSe nanorods are well crystalline with an average diameter of 85 nm and the lengths up to 10 μm. The possible mechanism for the formation of SnSe is also discussed.展开更多
Thermoelectric selenides have attracted more and more attentions recently.Herein,p-type Sn Se polycrystalline bulk materials with good thermoelectric properties are presented.By using the SnSe2 nanostructures synthesi...Thermoelectric selenides have attracted more and more attentions recently.Herein,p-type Sn Se polycrystalline bulk materials with good thermoelectric properties are presented.By using the SnSe2 nanostructures synthesized via a wetchemistry route as the precursor,polycrystalline Sn Se bulk materials were successfully obtained by a combined heattreating process under reducing atmosphere and following spark plasma sintering procedure.As a reference,the Sn Se nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process.The thermoelectric properties of the Sn Se polycrystalline transformed from SnSe2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity,whereas the decrease in Seebeck coefficient is nearly invisible.As a result,the maximum power factor is enhanced from 5.06×10^-4W/m·K^2 to 8.08×10^-4W/m·K^2 at 612℃.On the other hand,the reference sample,which was obtained by using Sn Se nanostructures as the precursor,displays very poor power factor of only 1.30×10^-4W/m·K^2 at 537℃.The x-ray diffraction（XRD）,scanning electron microscope（SEM）,x-ray fluorescence（XRF）,and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the polycrystalline Sn Se prepared by using SnSe2 precursor.On the other hand,the impact of heat-treating temperature on thermal conductivity is not obvious.Owing to the boosting of power factor,a high z T value of 1.07 at 612℃ is achieved.This study provides a new method to synthesize polycrystalline Sn Se and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.展开更多
Sn Se是一种潜在的极具应用前景的热电材料。采用机械合金化结合放电等离子烧结的方法制备了Ag掺杂的Sn1-xAgxSe(0.005≤x≤0.03)多晶块体热电材料,并借助XRD、SEM、电热输运测试系统研究了其物相组成、微结构与电热输运性能。XRD分析...Sn Se是一种潜在的极具应用前景的热电材料。采用机械合金化结合放电等离子烧结的方法制备了Ag掺杂的Sn1-xAgxSe(0.005≤x≤0.03)多晶块体热电材料,并借助XRD、SEM、电热输运测试系统研究了其物相组成、微结构与电热输运性能。XRD分析结果表明,少量Ag(0.005≤x≤0.01)掺杂仍然能够成功制备出单相斜方结构Sn Se化合物,但随着Ag掺杂量的增加,基体中出现Sn Ag Se2第二相,且第二相含量逐渐增加。掺杂Ag大幅度提高了载流子浓度,从而使材料的综合电输运性能(功率因子)显著提高,当Ag掺杂量x=0.02时,功率因子提高至4.95×10-4 W/(m·K2),较未掺杂Sn Se样品提高了36%。尽管掺杂样品的热导率均有小幅升高,无量纲热电优值(ZT)仍获得一定改善。当Ag掺杂量x=0.02时,Sn0.98Ag0.02Se成分样品具有较高的热电优值,并在823 K附近达到最高值0.82。展开更多
We report a facile phase conversion method that can locally convert n-type SnSe_(2)into p-type SnSe by direct laser irradiation.Raman spectra of SnSe_(2)flakes before and after laser irradiation confirm the phase conv...We report a facile phase conversion method that can locally convert n-type SnSe_(2)into p-type SnSe by direct laser irradiation.Raman spectra of SnSe_(2)flakes before and after laser irradiation confirm the phase conversion of SnSe_(2)to SnSe.By performing the laser irradiation on SnSe_(2)flakes at different temperatures,it is found that laser heating effect induces the removal of Se atoms from SnSe_(2)and results in the phase conversion of SnSe_(2)to SnSe.Lattice-revolved transmission electron microscope images of SnSe_(2)flakes before and after laser irradiation further confirm such conversion.By selective laser irradiation on SnSe_(2)flakes,a pattern with SnSe_(2)/SnSe heteostructures is created.This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.展开更多
基金support of the project from the National Natural Science Foundation of China(Grant No.91963207,12122408,12074292)National Key R&D Program of China(Grant No.2021YFA0718700)Suzhou Key Industrial Technology Innovation project(Grant No.SYG201921).
文摘SnSe has attracted extensive attention due to its ultralow thermal conductivity and excellent thermoelectric properties.In this work,pressure-induced thermoelectric properties of Pnma SnSe are investigated via first-principles calculations.We uncover distinct energy isosurfaces topology transition of conduction band by applying pressure.The newly created conduction band valley caused by pressure has a distinct anisotropic shape compared to the old one.Inducing pressure can greatly enhance the anisotropy of electronic transport properties of the n-type Pnma SnSe.Furthermore,the lattice thermal conductivity also exhibits anisotropic behavior under pressure due to a special collaged phonon mode.The pressure-induced lattice thermal conductivity along the a-axis shows a slower growth trend than that along the b-axis and c-axis.The optimal ZT value of the n-type Pnma SnSe along the a-axis can reach 1.64 at room temperature.These results would be helpful for designing the Pnma SnSe-based materials for the potential thermoelectric and valleytronic applications.
文摘The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing agent (trisodium citrate) at room temperature under ambient air. The product was characterized by X-ray diffraction (XRD), transmission electron microscopoy (TEM) and X-ray photoelectron spectroscopy (XPS). The results reveal that the SnSe nanorods are well crystalline with an average diameter of 85 nm and the lengths up to 10 μm. The possible mechanism for the formation of SnSe is also discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572049,51562005,and 51772056)the Natural Science Foundation of Guangxi Zhuang Automomous Region,China(Grant Nos.2015GXNSFFA139002 and 2016GXNSFBA380152)the Open Fund of Key Laboratory of Cryogenics,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences(Grant No.CRYO201703)
文摘Thermoelectric selenides have attracted more and more attentions recently.Herein,p-type Sn Se polycrystalline bulk materials with good thermoelectric properties are presented.By using the SnSe2 nanostructures synthesized via a wetchemistry route as the precursor,polycrystalline Sn Se bulk materials were successfully obtained by a combined heattreating process under reducing atmosphere and following spark plasma sintering procedure.As a reference,the Sn Se nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process.The thermoelectric properties of the Sn Se polycrystalline transformed from SnSe2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity,whereas the decrease in Seebeck coefficient is nearly invisible.As a result,the maximum power factor is enhanced from 5.06×10^-4W/m·K^2 to 8.08×10^-4W/m·K^2 at 612℃.On the other hand,the reference sample,which was obtained by using Sn Se nanostructures as the precursor,displays very poor power factor of only 1.30×10^-4W/m·K^2 at 537℃.The x-ray diffraction（XRD）,scanning electron microscope（SEM）,x-ray fluorescence（XRF）,and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the polycrystalline Sn Se prepared by using SnSe2 precursor.On the other hand,the impact of heat-treating temperature on thermal conductivity is not obvious.Owing to the boosting of power factor,a high z T value of 1.07 at 612℃ is achieved.This study provides a new method to synthesize polycrystalline Sn Se and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.
基金supported by the Fundamental Research Funds for the Central Universities,China(2592012184)Fund of the Priority Academic Program Development of Jiangsu Higher Education Institutions,China~~
基金supported by the National Key Research&Development Project of China(Grant Nos.2016YFA0202300 and 2018FYA0305800)the National Natural Science Foundation of China(Grant No.61888102)+1 种基金Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.Y201902)。
文摘We report a facile phase conversion method that can locally convert n-type SnSe_(2)into p-type SnSe by direct laser irradiation.Raman spectra of SnSe_(2)flakes before and after laser irradiation confirm the phase conversion of SnSe_(2)to SnSe.By performing the laser irradiation on SnSe_(2)flakes at different temperatures,it is found that laser heating effect induces the removal of Se atoms from SnSe_(2)and results in the phase conversion of SnSe_(2)to SnSe.Lattice-revolved transmission electron microscope images of SnSe_(2)flakes before and after laser irradiation further confirm such conversion.By selective laser irradiation on SnSe_(2)flakes,a pattern with SnSe_(2)/SnSe heteostructures is created.This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.
