SPICE modeling of flux-controlled unipolar memristive devices

Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.

SPICE modeling of memristors with multilevel resistance states

With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor＇s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell （MCL） tech- nology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis （SPICE） modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.

Characterization of silicon microstrip sensors for space astronomy

Silicon microstrip detectors are widely used in experiments for space astronomy.Before the detector is assembled,extensive characterization of the silicon microstrip sensors is indispensable and challenging.This work electrically evaluates a series of sensor parameters,including the depletion voltage,bias resistance,metal strip resistance,total leakage current,strip leakage current,coupling capacitance,and interstrip capacitance.Two methods are used to accurately measure the strip leakage current,and the test results match each other well.In measuring the coupling capacitance,we extract the correct value based on a SPICE model and two-port network analysis.In addition,the expression of the measured bias resistance is deduced based on the SPICE model.

The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs

Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX comer rounding equations have been derived based on an assumption that the comer rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the comer rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed comer rounding model is practical and accurate. Key words： SPICE model; MOSFETs; poly and active; comer rounding; nanometer technology

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.

A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design

A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.

Novel FGMOS Based PCS Device for Low Power Applications

The spice model for photo catalytic sensor （PCS） proposed by Whig and Ahmad overcomes several drawbacks like complex designing, non-linearity, and long computation time generally found in the flow injection analysis （FIA） technique by Yoon-Chang Kim et al. for the determination of chemical oxygen demand （COD）. The FIA technique involves the complete analysis including sampling and washing. The flow injection analysis is an analytical method for the measurement of the chemical oxygen demand by using the photochemical column. This method uses a bulky setup and takes 10 minutes to 15 minutes to get the output result which is a tedious and time consuming job. If the conventional method is continuously used for a long time then it is stable only for 15 days. The purpose of this paper is to propose a new floating gate photo catalytic sensor （FGPCS） approach which has low power consumption and more user-friendly, and it is fast in operation by the modeling and optimization of sensor used for water quality monitoring. The proposed model operates under sub-threshold conditions which are appreciated in large integrated system design. The results of simulation are found to be fairly in agreement with the theoretical predictions. The results exhibit near linear variations of parameters of interest with appreciably reduced response time.

A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.

Frequency equation for the submicron CMOS ring oscillator using the first order characterization

By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with different Beta ratios,for the computation of the operating frequency.Later on,the circuit simulation is performed from 5-stage till 23-stage,with the range of oscillating frequency being 3.0817 and 0.6705 GHz respectively.It is noted that the output frequency is inversely proportional to the square of the device length,and when the value of Beta ratio is used as 2.3,a difference of 3.64%is observed on an average,in between the computed and the simulated values of frequency.As an outcome,the derived equation can be utilized,with the inclusion of an empirical constant in general,for arriving at the ring oscillator circuit’s output frequency.