Fly ash is an industrial waste created when coal is burned to generate electrical power. In the present study, we used low-energy nitrogen ion implantation on fly ash to improve its surface properties. Scanning electr...Fly ash is an industrial waste created when coal is burned to generate electrical power. In the present study, we used low-energy nitrogen ion implantation on fly ash to improve its surface properties. Scanning electron microscope （SEM）, fourier transform infrared spectroscopy （FTIR）, X-ray photoelectron spectroscopy （XPS） and inductively coupled plasma-atomic emission spectroscopy （ICP-AES） were used to study the changes of physical and chemical properties of fly ash after N＋ ion implantation, and the mechanism of fly ash modified by ion implantation. In the optimal implantation with energy of 5 keV and dose Of 15D0, the ion beam could effectively increase the specific surface area （approximately 150% increase） of the fly ash. Lots of scratches were generated in the surface of the fly ash after N＋ ion implantation, therefore it is good for enhancing the specific surface area. Experimental results show that the ion implantation could open the chemical bonds of Si-O, Si-A1 and Al-O, and deposit nitrogen ions on the surface of fly ash.展开更多
The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density a...The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.展开更多
Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rat...Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.展开更多
Tt-phase electron-doped superconductor Pr1-xLaCexCuO4-δ（PLCCO） thin films are successfully prepared on SrTiOs （100） substrates by using the dc magnetron sputtering method. It is found that the films each have a h...Tt-phase electron-doped superconductor Pr1-xLaCexCuO4-δ（PLCCO） thin films are successfully prepared on SrTiOs （100） substrates by using the dc magnetron sputtering method. It is found that the films each have a highly oriented structure along the c-axis. For optimally doped films with x ≈ 0.10, the superconducting transition temperature Tc is 25.5 K, which is similar to that of a single crystal. The quadratic temperature dependence of the resistivity is observed when T 〉 To, which can be attributed to the two-dimensional Fermi liquid behaviour. Besides, the optimal conditions for preparing the T1-phase PLCCO thin films are also discussed in detail.展开更多
Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical an...Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.展开更多
靶材刻蚀特性是研究磁控溅射靶材利用率、薄膜生长速度和薄膜质量的关键因素。本文用有限元分析软件ANSYS模拟了磁控溅射放电空间的磁场分布,用粒子模拟软件OOPIC Pro(object oriented particlein cell)模拟了放电过程,最后用SRIM(stopp...靶材刻蚀特性是研究磁控溅射靶材利用率、薄膜生长速度和薄膜质量的关键因素。本文用有限元分析软件ANSYS模拟了磁控溅射放电空间的磁场分布,用粒子模拟软件OOPIC Pro(object oriented particlein cell)模拟了放电过程,最后用SRIM(stopping and range of ions in matter)模拟了靶材的溅射特性,得到了靶材的刻蚀形貌和刻蚀速度,并讨论了不同工作气压和不同阴极电压对靶材刻蚀的影响。模拟结果表明:靶材刻蚀形貌与磁场分布有关,磁通密度越强,对应的靶材位置刻蚀越深;靶材的刻蚀速度随阴极电压的增大而增大,而当工作气压增大时,靶材的刻蚀速度先增大后趋向平衡,当工作气压超过一定的值时,刻蚀速度随气压的增大开始减小。模拟结果与实验观测进行了比较,二者符合较好。展开更多
基金supported by National Natural Science Foundation of China(No.20976183)
文摘Fly ash is an industrial waste created when coal is burned to generate electrical power. In the present study, we used low-energy nitrogen ion implantation on fly ash to improve its surface properties. Scanning electron microscope （SEM）, fourier transform infrared spectroscopy （FTIR）, X-ray photoelectron spectroscopy （XPS） and inductively coupled plasma-atomic emission spectroscopy （ICP-AES） were used to study the changes of physical and chemical properties of fly ash after N＋ ion implantation, and the mechanism of fly ash modified by ion implantation. In the optimal implantation with energy of 5 keV and dose Of 15D0, the ion beam could effectively increase the specific surface area （approximately 150% increase） of the fly ash. Lots of scratches were generated in the surface of the fly ash after N＋ ion implantation, therefore it is good for enhancing the specific surface area. Experimental results show that the ion implantation could open the chemical bonds of Si-O, Si-A1 and Al-O, and deposit nitrogen ions on the surface of fly ash.
文摘The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.
文摘Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
基金supported by the State Key Program for Basic Research of China(Grant No 2004CB619004-1)the National Natural Science Foundation of China(Grant No 10474121)
文摘Tt-phase electron-doped superconductor Pr1-xLaCexCuO4-δ（PLCCO） thin films are successfully prepared on SrTiOs （100） substrates by using the dc magnetron sputtering method. It is found that the films each have a highly oriented structure along the c-axis. For optimally doped films with x ≈ 0.10, the superconducting transition temperature Tc is 25.5 K, which is similar to that of a single crystal. The quadratic temperature dependence of the resistivity is observed when T 〉 To, which can be attributed to the two-dimensional Fermi liquid behaviour. Besides, the optimal conditions for preparing the T1-phase PLCCO thin films are also discussed in detail.
基金Funded by the Fundamental Research Fund for the Central Universities(No.CDJXS10102207)the National Natural Science Foundation of China(Nos.11075314,11404302 and 50942021)+2 种基金the Natural Science Foundation of Chongqing City(2011BA4031)the Third Stage of“211”Innovative Talent Training Project(No.S-09109)the Sharing Fund of Large-scale Equipment of Chongqing University(Nos.2010063072 and 2010121556)
文摘Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.
文摘靶材刻蚀特性是研究磁控溅射靶材利用率、薄膜生长速度和薄膜质量的关键因素。本文用有限元分析软件ANSYS模拟了磁控溅射放电空间的磁场分布,用粒子模拟软件OOPIC Pro(object oriented particlein cell)模拟了放电过程,最后用SRIM(stopping and range of ions in matter)模拟了靶材的溅射特性,得到了靶材的刻蚀形貌和刻蚀速度,并讨论了不同工作气压和不同阴极电压对靶材刻蚀的影响。模拟结果表明:靶材刻蚀形貌与磁场分布有关,磁通密度越强,对应的靶材位置刻蚀越深;靶材的刻蚀速度随阴极电压的增大而增大,而当工作气压增大时,靶材的刻蚀速度先增大后趋向平衡,当工作气压超过一定的值时,刻蚀速度随气压的增大开始减小。模拟结果与实验观测进行了比较,二者符合较好。
