Compositional graded BaxSr1-xTiO3 (x=0.6, 0.7, 0.8, 0.9, 1.0) (BST) thin films (less than 400 nm) were fabricated on Si and Pt/Ti/SiO2/Si substrates by sol-gel technique. A special heating treatment was employed to fo...Compositional graded BaxSr1-xTiO3 (x=0.6, 0.7, 0.8, 0.9, 1.0) (BST) thin films (less than 400 nm) were fabricated on Si and Pt/Ti/SiO2/Si substrates by sol-gel technique. A special heating treatment was employed to form the uniform composition gradients at 700 ℃. The microstructures of the films were studied by means of X-ray diffraction, atomic force microscope and field emission scanning electron microscopy. The results show that the films have uniform and crack-free surface morphology with perovskite structure phase. The small signal dielectric constant (εr) and dielectric loss (tan δ) are found to be 335 and 0.045 at room temperature and 200 kHz. The dielectric properties change significantly with applied dc bias, and the graded thin film show high tunability of 42.3% at an applied field of 250 kV/cm. All the results indicate that the graded BST thin films prepared by sol-gel technique have a promising candidate for microelectronic device.展开更多
Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the st...Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.展开更多
基金Project(50372017/E0204) supported by the National Natural Science Foundation of China Project (2004ABA094) supported by the Natural Science Foundation of Hubei Province Project supported by the Innovation Team Foundation of Education Bureau of Hubei Province, China
文摘Compositional graded BaxSr1-xTiO3 (x=0.6, 0.7, 0.8, 0.9, 1.0) (BST) thin films (less than 400 nm) were fabricated on Si and Pt/Ti/SiO2/Si substrates by sol-gel technique. A special heating treatment was employed to form the uniform composition gradients at 700 ℃. The microstructures of the films were studied by means of X-ray diffraction, atomic force microscope and field emission scanning electron microscopy. The results show that the films have uniform and crack-free surface morphology with perovskite structure phase. The small signal dielectric constant (εr) and dielectric loss (tan δ) are found to be 335 and 0.045 at room temperature and 200 kHz. The dielectric properties change significantly with applied dc bias, and the graded thin film show high tunability of 42.3% at an applied field of 250 kV/cm. All the results indicate that the graded BST thin films prepared by sol-gel technique have a promising candidate for microelectronic device.
基金Project (50332030) supported by the National Natural Science Foundation of China
文摘Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.
