Oxide p - n junctions of p-SrIn0.1 Ti0.9 O3/n-SrNb0.01 Ti0.99 O3 （SITO/SNTO） are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly ...Oxide p - n junctions of p-SrIn0.1 Ti0.9 O3/n-SrNb0.01 Ti0.99 O3 （SITO/SNTO） are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.展开更多
Bi doped SrTiO3 ceramics with Sr deficiency,i.e.Sr1-1.5xBixTiO3(x=0,0.01,0.05,0.1),were prepared via conventional solid-state reaction route.A colossal permittivity(CP)over 104 with low dielectric loss less than 0.05w...Bi doped SrTiO3 ceramics with Sr deficiency,i.e.Sr1-1.5xBixTiO3(x=0,0.01,0.05,0.1),were prepared via conventional solid-state reaction route.A colossal permittivity(CP)over 104 with low dielectric loss less than 0.05wasobtained in x=0.05 Sr1-1.5xBixTiO3 ceramics.In addition,the dielectric constant is maintained at a value greater than 104 in the range of 102-105 Hz and almost frequency independent.Phase structure analysis and density functional theory calculations suggest that the Bi·Sr-V"Sr-Bi·Sr defect complex with hole-pinned defect-dipoles maybe responsible for the high-performance CP properties.This work gives a new way to achieve high performance CP materials in ABO3 perovskite ceramics.展开更多
Stainless steel-doped SrTiO3 thin films were fabricated by laser molecular beam epitaxy (L-MBE). Nonlinear optical property of the thin film was measured by the single beam Z-scan technique at the wavelength of 532 nm...Stainless steel-doped SrTiO3 thin films were fabricated by laser molecular beam epitaxy (L-MBE). Nonlinear optical property of the thin film was measured by the single beam Z-scan technique at the wavelength of 532 nm. Two two-phonon absorption coefficient and nonlinear refractive index were determined to be 9.37 x 10-7 m/W and 1.55 x 10-6 esu, respectively. The merit figure T was calculated to be 1.8, satisfying condition T < 1 for an optical switch. The thin film has a very promising prospect for the applications in optical device.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50672120.
文摘Oxide p - n junctions of p-SrIn0.1 Ti0.9 O3/n-SrNb0.01 Ti0.99 O3 （SITO/SNTO） are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.
基金This work was supported by the National Natural Science Foundation of China[Grant Nos.51677033,51802061,51702069].
文摘Bi doped SrTiO3 ceramics with Sr deficiency,i.e.Sr1-1.5xBixTiO3(x=0,0.01,0.05,0.1),were prepared via conventional solid-state reaction route.A colossal permittivity(CP)over 104 with low dielectric loss less than 0.05wasobtained in x=0.05 Sr1-1.5xBixTiO3 ceramics.In addition,the dielectric constant is maintained at a value greater than 104 in the range of 102-105 Hz and almost frequency independent.Phase structure analysis and density functional theory calculations suggest that the Bi·Sr-V"Sr-Bi·Sr defect complex with hole-pinned defect-dipoles maybe responsible for the high-performance CP properties.This work gives a new way to achieve high performance CP materials in ABO3 perovskite ceramics.
基金This work was supported by the National Natural Science Foundation under Grant No. 5001161952.
文摘Stainless steel-doped SrTiO3 thin films were fabricated by laser molecular beam epitaxy (L-MBE). Nonlinear optical property of the thin film was measured by the single beam Z-scan technique at the wavelength of 532 nm. Two two-phonon absorption coefficient and nonlinear refractive index were determined to be 9.37 x 10-7 m/W and 1.55 x 10-6 esu, respectively. The merit figure T was calculated to be 1.8, satisfying condition T < 1 for an optical switch. The thin film has a very promising prospect for the applications in optical device.
