We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous sta...We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI micro- structures by various PCMs. By comparison, Sb2 Tea could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2 Te3 liner stressor, 22% electron mobility enhancement at Xinv=1×10^13cm^-2 could be achieved, suggesting that PCM especially Sb2 Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.展开更多
We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_（1-x）Ge_x substrates.The results obtained from our calculation show that their hole mobility va...We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_（1-x）Ge_x substrates.The results obtained from our calculation show that their hole mobility values corresponding to strained Si（001）,（101） and（111） increase by at most about three,two and one times,respectively, in comparison with the unstrained Si.The results can provide a valuable reference to the understanding and design of strained Si-based device physics.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376097,61504120U1609213,the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20130091110025
文摘We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI micro- structures by various PCMs. By comparison, Sb2 Tea could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2 Te3 liner stressor, 22% electron mobility enhancement at Xinv=1×10^13cm^-2 could be achieved, suggesting that PCM especially Sb2 Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.
基金supported by the Research Fund for the Doctoral Program of Higher Education of China(No.JY0300122503)NLAIC Research Fund(No.P140c090303110c0904)
文摘We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_（1-x）Ge_x substrates.The results obtained from our calculation show that their hole mobility values corresponding to strained Si（001）,（101） and（111） increase by at most about three,two and one times,respectively, in comparison with the unstrained Si.The results can provide a valuable reference to the understanding and design of strained Si-based device physics.
