Near-stoichiometric Ti:LiNbO3 strip waveguide with varied substrate refractive index in waveguide layer

We report the near-stoichiometric Ti：LiNbO3 strip waveguides fabricated by vapour transport equilibration （VTE） at 1060~^{／circ}C for 12 h and co-diffusion of 4--8~／mu m wide, 115-nm thick Ti-strips. Optical studies show that these waveguides are monomode at 1.5~／mu m and have losses of 1.3 and 1.1~dB/cm for the TM and TE modes, respectively. In the waveguide width/depth direction, the mode field follows a Gauss/Hermite--Gauss profile. A secondary ion mass spectrometry study reveals that the Ti profile follows a sum of two error functions along the width direction and a complementary error function in the depth direction. Micro-Raman analysis shows that the Li-composition in the depth direction also follows a complementary error function. The mean Li/Nb ratio in the waveguide layer is about 0.98. The inhomogeneous Li-composition profile results in a varied substrate index in the guiding layer, and the refractive index profile in the guiding layer is given.

Strip Waveguide Directional Coupling Modulator with Equivalent Refractive Index

The equivalent refractive index（ERI） method is employed to analyze the function of the strip waveguide directional coupling modulator（SWM）. Through deducing the diagnostic equation of the Exmn mode of the four-layer media film waveguide equivalent to the SWM,the transmission constant of the symmetrical mode of the positive phase and negative one and the coupling length of powerful transference are obtained. The veracity of ERI is validated with the example of Ex11 basal mode under conditions of comparing the three results of ERI,EIM and Marcatili.

A Mach-Zehnder interferometer electro-optic switch with ultralow voltage-length product using poled-polymer/silicon slot waveguide

By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Structural parameters are optimized for realizing normal switching function.Dependencies of switching characteristics on the slot waveguide parameters are investigated.For the silicon strip with dimension of 170 nm×300 nm,as the slot width varies from 50 nm to 100 nm,the switching voltage can be as low as 1.0 V with active region length of only 0.17–0.35 mm,and the length of the whole device is only about 770–950 μm.The voltage-length product of this switching structure is only 0.17–0.35 V·mm,and it is at least 19–40 times smaller than that of the traditional polymer MZI EO switch,which is 6.69 V·mm.Compared with our previously reported MZI EO switches,this switch exhibits some superior characteristics,including low switching voltage,compact device size and small wavelength dependency.