To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum ...To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532nm for the two kinds of photocathodes respectively. The response of the reflection-mode photoeath- ode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAIAs active layer can improve the transmission-mode response.展开更多
The pressure-induced structural transitions of ZnTe are investigated at pressures up to 59.2 GPa in a diamond anvil cell by using synchrotron powder x-ray diffraction method. A phase transition from the initial zinc b...The pressure-induced structural transitions of ZnTe are investigated at pressures up to 59.2 GPa in a diamond anvil cell by using synchrotron powder x-ray diffraction method. A phase transition from the initial zinc blende (ZB, ZnTe-Ⅰ) structure to a cinnabar phase (ZnTe-Ⅱ) is observed at 9.6 GPa, followed by a high pressure orthorhombic phase (ZnTe-Ⅲ) with Cmcm symmetry at 12.1 GPa. The ZB, cinnabar (space group P3121), Cmcm, P31 and rock salt structures of ZnTe are investigated by using density functional theory calculations. Based on the experiments and calculations, the ZnTe-Ⅱ phase is determined to have a cinnabar structure rather than a P3 1 symmetry.展开更多
In today's economic situation, overcapacity of Chinese traditional manufacturing industry poses a serious threat to sustaineck rapid and healthy development of economy. The primary reasons of excess capacity of Chine...In today's economic situation, overcapacity of Chinese traditional manufacturing industry poses a serious threat to sustaineck rapid and healthy development of economy. The primary reasons of excess capacity of Chinese traditional manufacturing industry are the discordant between consumption and investment, the irrational industrial structure, export is not ideal and other causes. Overcapacity of traditional manufacturing industry will lead to business failures, unemployment citizen, deflation, financial risk and other series consequences. We should learn from foreign experience in the processing of excess capacity of traditional manufacturing industry and deal with excess capacity of traditional manufacturing industry in different aspects, so as to ensure stable and healthy development of our country' s economy.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61171042 and 61301023the Introducing Talent Scientific Initial Foundation of Nanjing Institute of Technology of China under Grant Nos YKJ201320,YKJ201322,and YKJ201323
文摘To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532nm for the two kinds of photocathodes respectively. The response of the reflection-mode photoeath- ode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAIAs active layer can improve the transmission-mode response.
基金Supported by the National Natural Science Foundation of China under Grant No 11474280the National Basic Research Program of China under Grant No 2011CB808200the Chinese Academy of Sciences under Grant Nos KJCX2-SW-N20 and KJCX2-SW-N03
文摘The pressure-induced structural transitions of ZnTe are investigated at pressures up to 59.2 GPa in a diamond anvil cell by using synchrotron powder x-ray diffraction method. A phase transition from the initial zinc blende (ZB, ZnTe-Ⅰ) structure to a cinnabar phase (ZnTe-Ⅱ) is observed at 9.6 GPa, followed by a high pressure orthorhombic phase (ZnTe-Ⅲ) with Cmcm symmetry at 12.1 GPa. The ZB, cinnabar (space group P3121), Cmcm, P31 and rock salt structures of ZnTe are investigated by using density functional theory calculations. Based on the experiments and calculations, the ZnTe-Ⅱ phase is determined to have a cinnabar structure rather than a P3 1 symmetry.
文摘In today's economic situation, overcapacity of Chinese traditional manufacturing industry poses a serious threat to sustaineck rapid and healthy development of economy. The primary reasons of excess capacity of Chinese traditional manufacturing industry are the discordant between consumption and investment, the irrational industrial structure, export is not ideal and other causes. Overcapacity of traditional manufacturing industry will lead to business failures, unemployment citizen, deflation, financial risk and other series consequences. We should learn from foreign experience in the processing of excess capacity of traditional manufacturing industry and deal with excess capacity of traditional manufacturing industry in different aspects, so as to ensure stable and healthy development of our country' s economy.