Basement interface structural characteristics beneath Jiashi strong earthquake swarm area in Xinjiang, China

The seismic data obtained from high resolution seismic refraction profile in Jiashi strong earthquake swarm area in Xinjiang, China were further processed with ray hit analysis method and more complete basement interface structural characteristics beneath Jiashi strong earthquake swarm area were determined. The results show that there are two clear basement interfaces at the upper crust in Jiashi strong earthquake swarm area. The first one with buried depth ranging from 2.6 km to 3.3 km presents integral and continuous structure, and it appears an inclined plane interface and smoothly rises up toward Tianshan Mountain. The second basement interface with buried depth from 8.5 km to 11.8 km, is the antiquated crystalline basement of Tarim basin. Near the post number of 37 km, the buried depth of the crystalline basement changed abruptly by 2.5 km, which maybe result from an ultra crystalline basement fault. If taking this fault as a boundary, the crystalline basement could be divided into two parts, i.e. the southwestern segment with buried depth about 11.5 km, and the northeastern segment with buried depth approxi-mately from 8.5 km to 9.0 km. That is to say, in each segment, the buried depth changes not too much. The northeast segment rises up as a whole and upheaves slightly from southwest to northeast, which reflects the upper crustal deformation characteristics under the special tectonic background at the northwestern edge of Tarim basin.

A Modified Model for Soil–Structure Interface Considering Random Damage of Mesoscopic Contact Elements

The interaction between soil and marine structures like submarine pipeline/pipe pile/suction caisson is a complicated geotechnical mechanism process.In this study,the interface is discretized into multiple mesoscopic contact elements that are damaged randomly throughout the shearing process due to the natural heterogeneity.The evolution equation of damage variable is developed based on the Weibull function,which is able to cover a rather wide range of distribution shapes by only two parameters,making it applicable for varying scenarios.Accordingly,a statistical damage model is established by incorporating Mohr–Coulomb strength criterion,in which the interfacial residual strength is considered whereby the strain softening behavior can be described.A concept of“semi-softening”characteristic point on shear stress–displacement curve is proposed for effectively modeling the evolution of strain softening.Finally,a series of ring shear tests of the interfaces between fine sea sand and smooth/rough steel surfaces are conducted.The predicted results using the proposed model are compared with experimental data of this study as well as some results from existing literature,indicating that the model has a good performance in modeling the progressive failure and strain softening behavior for various types of soil–structure interfaces.

The role of melt cooling rate on the interface between 18R and Mg matrix in Mg_(97)Zn_(1)Y_(2) alloys

The role of melt cooling rate on the interface morphology and dislocation configuration between 18R long-period stacking ordered(LPSO)structure and Mg matrix in Mg_(97)Zn_(1)Y_(2)(at.%)alloys was investigated by atomic-scale HAADF-STEM imaging.The 18R/Mg interface is step-like both in the near-equilibrium alloy and non-equilibrium alloy.Lower cooling rate makes the step size more regular and larger.Only 54R structure can be observed at the interface in the near-equilibrium alloy,and the dislocations are highly ordered.54R and 54R′structure sandwiched by b1 and b2+b3 dislocation arrays,and new dislocation configuration can be detected at the interface in the non-equilibrium alloy,but the dislocations are less ordered.18R/Mg interface containing 54R or 54R′in equilibrium width,parallel to the(010)plane,should be most stable based on elastic calculation.The segregation of solute atoms and its strong interaction with dislocations dominate the LPSO/Mg interface via diffusion-displacive transformation.

Segregation of Si and Mg at Fe(110)/Al(110) Interface

The interface structure and electronic properties of Fe(110)/Al(110) are investigated by the first-principles plane-wave pseudopotential method. The interface segregation position of Si and Mg is determined, and the effect of Mg and Si on the interface binding of Fe(110)/Al(110) is analyzed by combining the work of separation and charge density. The results show that the Fe(110)/Al(110) interface energy of FeHollow coordination is smaller and the interface structure is more stable. The Fe(110)/Al(110) interface separation surface in the form of Fe-Hollow coordination appears at the sub interface layer on the side of Al(110)near the interface. The interface structure of Mg and Si segregation is similar to that of undoped alloy elements.The calculations also suggest that Mg and Si segregate on the Al(110) side of the interface and occupy the Al lattice on the Al(110) side. The segregation of Mg and Si elements will reduce the interface binding, primarily because the Fe-Si bond and Fe-Mg bond are weaker than Fe-Al bond.

Interface structure and formation mechanism of diffusion-bonded joints of TiAl-based alloy to titanium alloy

Vacuum diffusion bonding of a TiAl based alloy (TAD) to a titanium alloy (TC2) was carried out at 1 273 K for 15～120 min under a pressure of 25 MPa . The kinds of the reaction products and the interface structures of the joints were investigated by SEM, EPMA and XRD. Based on this, a formation mechanism of the interface structure was elucidated. Experimental and analytical results show that two reaction layers have formed during the diffusion bonding of TAD to TC2. One is Al rich α(Ti)layer adjacent to TC2,and the other is (Ti 3Al+TiAl)layer adjacent to TAD,thus the interface structure of the TAD/TC2 joints is TAD/(Ti 3Al+TiAl)/α(Ti)/TC2.This interface structure forms according to a three stage mechanism,namely(a)the occurrence of a single phase α(Ti)layer;(b)the occurrence of a duplex phase(Ti 3Al+TiAl)layer;and(c)the growth of the α(Ti)and (Ti 3Al+TiAl)layers.

Theoretical Studies on the Si(001)-SiO_2 Interface Structure

Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.

Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si （100） substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite （OZn）, interstitial oxygen （Oi）, interstitial zinc （Zni） and zinc vacancy （VZn^-）, which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

Dye-sensitized solar cells: Atomic scale investigation of interface structure and dynamics

Recent progress in dye-sensitized solar cells （DSC） research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto Ti02, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron-hole recombination. Advanced exper- imental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and oppor- tunities for further improvement of dye solar cells are presented.

CRYSTAL DEFECTS AND GRAIN INTERFACE STRUCTURE OF ION-NITRIDED LAYERS

Observation under high resolution electron microscope shows that the continuous bombing of high speed ions produces a great amount of vacant site defects.The assembly of vacancies forms vacant dish,and the collapase of vacant dish forms stacking fault tetrahedrons and oth- er crystal defects.The interfaces between phase ε(Fe_(2-3)N)and phase γ'(Fe_4N)are smooth, straight and coherent,and they have the orientation relationships of(11)//(0001)and [110]/[110] .

STRUCTURE AND INTERFACE PROPERTIES OF Fe/C MULTILAYERS

Fe/C multilayer thin films were deposited by magnetron sputtering. Small angle X-ray diffraction measurements show very well periodicity of the samples. The modulation period determined from a modified Bragg equation agrees well with that determined from deposition rate. The interfacial roughness parameter ξof several samples calculated by X-ray diffraction is between 3.5(?) and 5.6(?).

Fine structure characterization of an explosively-welded GH3535/316H bimetallic plate interface

An explosion-welded technology was induced to manufacture the GH3535/316H bimetallic plates to provide a more cost-effective structural material for ultrahigh temperature,molten salt thermal storage systems.The microstructure of the bonding interfaces were extensively investigated by scanning electron microscopy,energy dispersive spectrometry,and an electron probe microanalyzer.The bonding interface possessed a periodic,wavy morphology and was adorned by peninsula-or island-like transition zones.At higher magnification,a matrix recrystallization region,fine grain region,columnar grain region,equiaxed grain region,and shrinkage porosity were observed in the transition zones and surrounding area.Electron backscattered diffraction demonstrated that the strain in the recrystallization region of the GH3535 matrix and transition zone was less than the substrate.Strain concentration occurred at the interface and the solidification defects in the transition zone.The dislocation substructure in 316H near the interface was characterized by electron channeling contrast imaging.A dislocation network was formed in the grains of 316H.The microhardness decreased as the distance from the welding interface increased and the lowest hardness was inside the transition zone.

FINE STRUCTURES OF BOTH INTERFACES AND INTERFACIAL REACTION PRODUCTS

The characteristic of interface depending on the atomic structure exerts an inportant,and sometime controlling,influence on performance of the interacial materials. The present paper reviews the main studies on fine structure of both the materials inter- faces and interfacial reaction products in semiconductor uperlattice,metal multilayer ceram- ics and composite materials by mean of selected area electron doffraction patterns and high resolution electron microscopy. The following features of interfaces are reviewed:the orientation relationships;the char- acteristic of steps,facets and ronghness of interfaces;atomic bonding across the interface;the degree of coherency,the structure of misfit dislocations and elastic relaxations at the inter- faces:the presence of defects at the onterfaces:the structure of the interfacial reaction prod- ucts as well as the reaction kinetics and reaetion mechanism.

Earth Ecosystem Theory: Ⅲ Structure and Interface

By applying the segmentation and composition principles of ecosystem,the structure and interface of earth ecosystem are fully elaborated,and corresponding model diagrams are established to display its composition and interconversion. The research finds that earth ecosystem includes three sub-ecosystems： terrestrial ecosystem,marine ecosystem and atmospheric ecosystem. The impact sequence of sub-ecosystems on earth ecosystem is atmospheric ecosystem 〉 marine ecosystem 〉 terrestrial ecosystem. Based on the segmentation and composition principles of ecosystem and the application of earth ecosystem structure and interface,we give new explanations to Taoism and Taiji with the eight diagrams,which contributes to theoretical research of natural science.

Effect of Temperature on Structural and Magnetic Properties of Laser Ablated Iron Oxide Deposited on Si（100）

We fabricate Fe3O4 thin films on Si（100） substrates at different temperatures using pulsed laser deposition, and study the effect of annealing and deposition temperature on the structural and magnetic properties of Fe3O4 thin films. Subsequently, the films are characterized by x-ray diffraction （XRD）, scanning electron microscopy （SEM） and vibrating sample magnetometery （VSM）. The XRD results of these films confirm the presence of the Fe3O4 phase and show room-temperature ferromagnetism, as observed with VSM. We demonstrate the optimized deposition and annealing conditions for an enhanced magnetization of 854 emu/cm3 that is very high when compared to the bulk sample.

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem- perature above room temperature in all the implanted samples, while the effective magnetic moment per Sin obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94（2005）037205, Phys. Rev. B 72（2005）245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.

Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal？insulator-metal （MIM） structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.

Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation

We prepare the gallium oxide （β-Ga2O3） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals thatβ-Ga2O3 nanobelts with a breadth less than lOOnm and length of severai micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.

Tailoring the surface and interface structures of photocatalysts to enhance hydrogen production

Photocatalytic water splitting using semiconductor photocatalysts is a promising approach for the production of carbon-neutral,sustainable and clean hydrogen fuel.However,the separation and transport of photoinduced carriers are generally considered to be rate-limiting steps,and their low efficiency remains a major challenge.Therefore,much effort has been devoted to developing new strategies in surface/interface engineering of photocatalysts to improve the dynamics of charge separation/transport.This feature article briefly summarizes recent advances in photocatalyst surface/interface engineering by our research group,which have been achieved through the design of various novel photocatalysts,including interfacial modulation,heterostructure construction,heteroatom doping,single atom and diatom sites.The article is divided into three parts:first,we briefly introduce the three key processes involved in solar water splitting and reveal relationships between the properties of nanostructural photocatalysts and the fundamentals of water splitting;second,we detail methods and strategies for surface and interfacial structures to improve the efficiency of the fundamental processes,especially charge separation;finally,we explore prospects for photocatalytic water splitting applications.This article provides a valuable resource and strategies for researchers currently working in the field of photocatalytic water splitting.