This paper presents a 12-channel,30Gb/s front-end amplifier realized in standard 0.18μm CMOS technology for parallel optlc-fiber receivers. In order to overcome the problem of inadequate bandwidth caused by the large...This paper presents a 12-channel,30Gb/s front-end amplifier realized in standard 0.18μm CMOS technology for parallel optlc-fiber receivers. In order to overcome the problem of inadequate bandwidth caused by the large parasitical capacitor of CMOS photo-detectors,a regulated-cascode structure and noise optimization are used in the design of the transimpedance amplifier. The experimental results indicate that, with a parasitical capacitance of 2pF,a single channel is able to work at bite rates of up to 2.5Gb/s,and a clear eye diagram is obtained with a 0. 8mVpp input. Furthermore, an isolation structure combined with a p^＋ guard.ring （PGR）, an n^＋ guard-ring （NGR）,and a deep-n-well （DNW） for parallel amplifier is also presented. Taking this combined structure, the crosstalk and the substrate noise coupling have been effectively reduced. Compared with the isolation of PGR or PGR ＋ NGR,the measured results show that the isolation degree of this structure is improved by 29.2 and 8. ldB at 1GHz,and by 8. 1 and 2. 5dB at 2GHz,respectively. With a 1.8V supply,each channel of the front-end amplifier consumes a DC power of 85mW,and the total power consumption of 12 channels is about 1W.展开更多
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra...An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.展开更多
文摘This paper presents a 12-channel,30Gb/s front-end amplifier realized in standard 0.18μm CMOS technology for parallel optlc-fiber receivers. In order to overcome the problem of inadequate bandwidth caused by the large parasitical capacitor of CMOS photo-detectors,a regulated-cascode structure and noise optimization are used in the design of the transimpedance amplifier. The experimental results indicate that, with a parasitical capacitance of 2pF,a single channel is able to work at bite rates of up to 2.5Gb/s,and a clear eye diagram is obtained with a 0. 8mVpp input. Furthermore, an isolation structure combined with a p^＋ guard.ring （PGR）, an n^＋ guard-ring （NGR）,and a deep-n-well （DNW） for parallel amplifier is also presented. Taking this combined structure, the crosstalk and the substrate noise coupling have been effectively reduced. Compared with the isolation of PGR or PGR ＋ NGR,the measured results show that the isolation degree of this structure is improved by 29.2 and 8. ldB at 1GHz,and by 8. 1 and 2. 5dB at 2GHz,respectively. With a 1.8V supply,each channel of the front-end amplifier consumes a DC power of 85mW,and the total power consumption of 12 channels is about 1W.
基金Project supported by the National Natural Science Foundation of China(No.61674036)
文摘An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.
