Influence of substrate effect on near-field radiative modulator based on biaxial hyperbolic materials

Relative rotation between the emitter and receiver could effectively modulate the near-field radiative heat transfer(NFRHT)in anisotropic media.Due to the strong in-plane anisotropy,natural hyperbolic materials can be used to construct near-field radiative modulators with excellent modulation effects.However,in practical applications,natural hyperbolic materials need to be deposited on the substrate,and the influence of substrate on modulation effect has not been studied yet.In this work,we investigate the influence of substrate effect on near-field radiative modulator based onα-MoO_(3).The results show that compared to the situation without a substrate,the presence of both lossless and lossy substrate will reduce the modulation contrast(MC)for different film thicknesses.When the real or imaginary component of the substrate permittivity increases,the mismatch of hyperbolic phonon polaritons(HPPs)weakens,resulting in a reduction in MC.By reducing the real and imaginary components of substrate permittivity,the MC can be significantly improved,reaching 4.64 forε_(s)=3 at t=10 nm.This work indicates that choosing a substrate with a smaller permittivity helps to achieve a better modulation effect,and provides guidance for the application of natural hyperbolic materials in the near-field radiative modulator.

Reduction in thermal conductivity of monolayer WS_(2) caused by substrate effect

Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-Raman)method is used to measure the thermal conductivity of monolayer WS_(2) at a temperature range of 200–400 K.High measurement accuracy can be guaranteed in this method since the influence of both the laser absorption coefficient and temperature-Raman coefficient can be eliminated through normalization.The room-temperature thermal conductivity of suspended and supported WS_(2) are 28.5±2.1(30.3±2.0)and 15.4±1.9(16.9±2.1)W/(m·K),respectively,with a~50%reduction due to substrate effect.Molecular dynamics(MD)simulations reveal that the suppression of acoustic phonons is mainly responsible for the striking reduction.The behaviors of optical phonons are also unambiguously investigated using Raman spectroscopy,and the in-plane optical mode,E(Γ),is surprisingly found to be slightly enhanced while out-of-plane mode,A1g(Γ),is suppressed due to substrate interaction,mutually verified with MD results.Our study provides a solid understanding of the phonon transport behavior of WS_(2) with substrate interaction,which provides guidance for TMDs-based nanodevices.

Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.

EFFECT OF SUBSTRATE TEMPERATURE ON Y-Ba-Cu-O THIN FILMS IN SITU GROWTH BY MOCVD

Superconducting thin films of YBa2Cu3O7-x（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition （MOCVD） on yttria stabilized zirconia（YSZ） substrates. The relationship of film orientation on substrate temperature and the lowest formation temperature region of superconducting phase have been obtained after changing the substrate temperature. The epitaxial relation between Y-Ba-Cu-O films and the YSZ su bstrates were discussed.

Substrate orientation effect in covalent organic frameworks/2D materials heterostructure by high-resolution atomic force microscopy

Heterostructures based on covalent organic frameworks(COFs)and other two-dimensional(2D)materials attract considerable attention due to their extraordinary properties and tremendous application potential.Substrate effects play a crucial role in the integration of ultrathin COF films onto 2D materials through direct polymerization.In this study,highly ordered monolayer COFs were successfully constructed on the surfaces of highly oriented pyrolytic graphite(HOPG),hexagonal boron nitride(hBN),and molybdenum disulfide(MoS_(2)).High-resolution atomic force microscopy(HR-AFM)imaging clearly reveals the substrate orientation effect in COFs/2D materials heterostructure.Honeycomb networks formed via Schiff-base reaction and boronic acid condensation reaction can epitaxially grow in specific orientations relative to the underlying substrate lattices.This work provides direct evidence for substrate effects in the on-surface synthesis of COFs and paves the way for further investigation into the intrinsic electronic properties of monolayer COFs and the development of multifunctional hybrid devices.

Raman Spectroscopy and Imaging of Graphene

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications.Here we review recent results on the Raman spectroscopy and imaging of graphene.We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers.The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model.We have also studied the effect of substrates,the top layer deposition,the annealing process,as well as folding(stacking order)on the physical and electronic properties of graphene.Finally,Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed.The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

Scaling relationships of elastic-perfectly plastic film/coating materials from small scale sharp indentation

The scaling relationships of elastic-perfectly plastic film/coating materials during sharp indentation have been obtained using dimensional analysis and finite-element modeling. Besides the bulk substrate materials, a wide range of film/coating materials with different ratios in term of the Young’s modulus and yield strength were examined, namely different values of Ef/Esand Yf/Es.Based on these scaling relationships, the substrate effects on indentation response and deformed surface profile of residual imprint are given. Furthermore, the scaling relationship among the work of indentation, reduced elastic modulus and hardness has been found. It is found that the ratio of the indentation hardness to measurement of substrate elastic modulus could be used to characterize the wear resistance of film/coating materials. In addition, a novel method to acquire the intrinsic hardness and elastic modulus of film/coating materials is proposed combined with the well-known 10% critical indentation depth rule, which avoids the error caused by estimating the contact area. This work could be contributed for characterizing the mechanical properties of film/coating materials at micro-and nanoscale.

Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions.It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias.As the sidegating bias decreased,the amplitudes of the oscillations would increase correspondingly.Furthermore,the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage.Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.