Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.

AC Back Surface Recombination Velocity in n⁺-p-p⁺Silicon Solar Cell under Monochromatic Light and Temperature

Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p+/p), the AC expression of the excess minority carriers’ density δ (T, ω) is determined. The AC density of photocurrent Jph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

Fabrication and Optical Properties of Silicon Nanowires Arrays by Electroless Ag-catalyzed Etching

In order to realize ultralow surface reflectance and broadband antireflection effects which common pyramidal textures and antireflection coatings can't achieve in photovoltaic industry,we used low-cost and easy-made Ag-catalyzed etching techniques to synthesize silicon nanowires(Si NWs) arrays on the substrate of single-crystalline silicon.The dense vertically-aligned Si NWs arrays are fabricated by local oxidation and selective dissolution of Si in etching solution containing Ag catalyst.The Si NWs arrays with 3 μm in depth make reflectance reduce to less than 3% in the range of 400 to 1000 nm while reflectance gradually reached the optimum value with the increasing of etching time.The antireflection of Si NWs arrays are based on indexgraded mechanism:Si NWs arrays on a subwavelength scale strongly scatter incident light and have graded refractive index that enhance the incidence of light in usable wavelength range.However,surface recombination of Si NWs arrays are deteriorated due to numerous dangling bonds and residual Ag particles.

n⁺-p-p⁺Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-p+ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

Statistical Optimization of Medium Components for Improved Product Ion of Recombinant Hyperthermophilic Esterase

The optimization of nutrient levels for the production of recombinant hyperthermophilie esterase by E. coli was carried out with response surface methodology（RSM） based on the central composite rotatable design（CCRD）. A 24 central composite rotatable design was used to study the combined effect of the nutritional constituents like yeast extract, peptone, mineral salt and trace metals. The P-value of the coefficient for the linear effect of peptone concentration was 0. 0081 and trace metals solution was less than 0. 0001, suggesting that these were the principal variables with significant effect on the hyperthermophilic esterase production. The predicted optimal hyperthermophilie esterase yield was 269. 17 U/mL, whereas an actual experimental value of 284. 58 U/mL was obtained.

Synthesis of Novel Hydrophobic Media and Purification of Recombinant HBsAg

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Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect

An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.

Theoretical investigation of some parameters into the behavior of quantum dot solar cells

The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells（QDSCs）. In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation–recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.