The Swift effect of Mg alloy is sensitive to initial texture.However,dislocation slip is the main deformation mechanism during torsion of Mg alloy.The underlying relation of Swift effect and dislocation slip is still ...The Swift effect of Mg alloy is sensitive to initial texture.However,dislocation slip is the main deformation mechanism during torsion of Mg alloy.The underlying relation of Swift effect and dislocation slip is still not clarified.The effect of stress state and pre-straining on Swift effect was studied experimentally during free-end torsion for an extruded AZ31 alloy.The free-end torsion was performed with axial tension and compression stress which is lower than yield stress.It is found that the transition of axial deformation from contraction to elongation occurs when the axial stress changes from negative to positive.The pre-dislocations introduced by pre-tension promote axial shortening during torsion.While the pre-twins introduced by pre-compression are inhibition of axial shortening.The change of axial deformation is attributed to competition between twinning and prismatic slip.The axial shortening of extruded Mg alloy is generated by tensile twinning leading to c-axis strain.In contrast,the axial elongation can be generated by the activation of prismatic slip.The magnitude of axial strain generated by twinning is larger than that by prismatic slip.Moreover,the occurrence of detwinning results in axial elongation at low shear strain.展开更多
Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated ...Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the 'blue shift' of 2D bond and the 'red shift' of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).展开更多
Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 a...Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.展开更多
基金Financial support from the projects by the NSFC(51771166)the Hebei Natural Science Foundation(E2019203452,E2021203011)+4 种基金the central government guiding local science and technology development(216Z1001G)the talent project of human resources and social security department of Hebei province(A202002002)the key project of department of education of Hebei province(ZD2021107)Graduate Innovation Program of Hebei province(CXZZBS2020053)The work was supported by the State Key Laboratory of Materials Processing and Die&Mould Technology,Huazhong University of Science and Technology(P2020-013).
文摘The Swift effect of Mg alloy is sensitive to initial texture.However,dislocation slip is the main deformation mechanism during torsion of Mg alloy.The underlying relation of Swift effect and dislocation slip is still not clarified.The effect of stress state and pre-straining on Swift effect was studied experimentally during free-end torsion for an extruded AZ31 alloy.The free-end torsion was performed with axial tension and compression stress which is lower than yield stress.It is found that the transition of axial deformation from contraction to elongation occurs when the axial stress changes from negative to positive.The pre-dislocations introduced by pre-tension promote axial shortening during torsion.While the pre-twins introduced by pre-compression are inhibition of axial shortening.The change of axial deformation is attributed to competition between twinning and prismatic slip.The axial shortening of extruded Mg alloy is generated by tensile twinning leading to c-axis strain.In contrast,the axial elongation can be generated by the activation of prismatic slip.The magnitude of axial strain generated by twinning is larger than that by prismatic slip.Moreover,the occurrence of detwinning results in axial elongation at low shear strain.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,11005134,and 11275237)
文摘Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the 'blue shift' of 2D bond and the 'red shift' of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134)
文摘Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.
