Two-layer monoclinic （2M） muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss （dE/dx）e of 14.7 keV/nm. The ion fiuence is varied between 1 &...Two-layer monoclinic （2M） muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss （dE/dx）e of 14.7 keV/nm. The ion fiuence is varied between 1 ×10^11 and 1 ×10^13 ions/cm^2. Structural transition in irradiated mica is investigated by x-ray diffraction （XRD）. The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion （SHI） irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic （1M） structure is thought to be generated in 2M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy （HRTEM） is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.展开更多
Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0...Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly展开更多
Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0&...Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.11675233 and 11505243)
文摘Two-layer monoclinic （2M） muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss （dE/dx）e of 14.7 keV/nm. The ion fiuence is varied between 1 ×10^11 and 1 ×10^13 ions/cm^2. Structural transition in irradiated mica is investigated by x-ray diffraction （XRD）. The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion （SHI） irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic （1M） structure is thought to be generated in 2M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy （HRTEM） is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.
基金Supported by NSFC (10475102)Scientific Research Foundation of Heze University,China (XY09WL02)Heze University Doctoral Foundation (XY10BS02)
文摘Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0× 10^17 or 1.2× 10^18 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0× 10^11, 1.0× 10^12, 5.0× 10^12 ions/cm2, or with 308 MeV Xe-ions to 1.0× 10^12, 1.0× 10^13, 1.0× 10^14 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. Prom the obtained Raman spectra, we deduced that Si-C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the fluence. The possible modification process of C-doped discussed. inclusion size decreased with increasing the irradiation a-SiO2 under swift heavy ion irradiations was briefly
基金supported by the National Natural Science Foundation of China (Grant No.10475102)the Scientific Research Foundation of Heze University,China (Grant No.XY09WL02)the Heze University Doctoral Foundation (Grant No.XY10BS02)
文摘Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.
