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A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance
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作者 Moufu Kong Zewei Hu +3 位作者 Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang 《Journal of Semiconductors》 EI CAS CSCD 2023年第5期53-61,共9页
A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S... A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects. 展开更多
关键词 SIC MOSFET specific on-resistance breakdown voltage HIGH-K SUPERJUNCTION switching performance reverse recovery characteristic
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Influence of Cathode Materials on Opening Performance of Plasma Opening Switch
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作者 孙凤举 曾正中 +2 位作者 邱毓昌 邱爱慈 曾江涛 《Plasma Science and Technology》 SCIE EI CAS CSCD 2000年第3期273-277,共5页
Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduct... Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduction time up to 3 microseconds, conduction current up to 100 kA. Remarkaly different opening characteristics have been shown for these materials,with tungsten being of the best opening performance. 展开更多
关键词 Influence of Cathode Materials on Opening performance of Plasma Opening Switch
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Performance analysis of optical burst switching under bursty traffic
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作者 陈春汉 曹明翠 罗志详 《Chinese Optics Letters》 SCIE EI CAS CSCD 2004年第1期21-23,共3页
The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optic... The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optical burst switch performance simulation is also introduced. 展开更多
关键词 performance analysis of optical burst switching under bursty traffic OBS LINE FDL LENGTH
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Performance analysis of an integrated scheme in optical burst switching high-speed networks
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作者 Amit Kumar Garg R.S.Kaler 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第4期244-247,共4页
A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the ov... A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings. 展开更多
关键词 rate NODE performance analysis of an integrated scheme in optical burst switching high-speed networks OBS length
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Optical Packet Routing Performance of an Optical Packet Switch With an Optical Digital/Analog-Conversion-Type Header Processor (Wavelength Label Switch) 被引量:1
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作者 Hiroyuki Uenohara Takeshi Seki Kohroh Kobayashi 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期701-702,共2页
We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable las... We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time. 展开更多
关键词 SSG for SOA as DBR AWG Wavelength Label Switch Optical Packet Routing performance of an Optical Packet Switch With an Optical Digital/Analog-Conversion-Type Header Processor of
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Performance Study on Priority Strategies for WDM Packet Switches under Long-Range Dependent Traffic
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作者 Chia-Wei Yu Chao-Chih Chang +1 位作者 Shou-Kuo Shao Jingshown Wu 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期745-746,共2页
The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy ... The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy design are also presented. 展开更多
关键词 WDM with of performance Study on Priority Strategies for WDM Packet Switches under Long-Range Dependent Traffic PBS PLP PE for on
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