A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.

Influence of Cathode Materials on Opening Performance of Plasma Opening Switch

Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduction time up to 3 microseconds, conduction current up to 100 kA. Remarkaly different opening characteristics have been shown for these materials,with tungsten being of the best opening performance.

Performance analysis of optical burst switching under bursty traffic

The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optical burst switch performance simulation is also introduced.

Performance analysis of an integrated scheme in optical burst switching high-speed networks

A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings.

Optical Packet Routing Performance of an Optical Packet Switch With an Optical Digital/Analog-Conversion-Type Header Processor (Wavelength Label Switch)

We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time.

Performance Study on Priority Strategies for WDM Packet Switches under Long-Range Dependent Traffic

The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy design are also presented.