缺血性脑卒中的病因分型对临床治疗决策和预后判断有重要价值。近年来,随着高分辨率磁共振血管壁成像(high-resolution vessel wall magnetic resonance imaging,HR-VW-MRI)在脑卒中临床研究和实践中的应用增加,7 T MRI以其更高信噪比...缺血性脑卒中的病因分型对临床治疗决策和预后判断有重要价值。近年来,随着高分辨率磁共振血管壁成像(high-resolution vessel wall magnetic resonance imaging,HR-VW-MRI)在脑卒中临床研究和实践中的应用增加,7 T MRI以其更高信噪比和更优图像质量,可发现脑血管早期、细微的病理变化,为深入了解各种脑血管疾病的病理机制提供了新思路。然而,超高场强也存在B1场不均、扫描时间长等技术挑战。本文就7 T HR-VW-MRI在缺血性卒中病因分型及临床应用中的进展进行综述,深入分析7 T HR-VW-MRI在提升临床诊断精确性与指导临床治疗中的潜在价值,为临床实践与科研探索提供参考。展开更多
Three-dimensional finite element model was established to simulate temperature fields of T-joint titanium sheets during TIG welding with finite element method （FEM） software. Temperature dependent material propertie...Three-dimensional finite element model was established to simulate temperature fields of T-joint titanium sheets during TIG welding with finite element method （FEM） software. Temperature dependent material properties and the effect of latent heat were considered. A technique of element birth and death was used to simulate the process of welded metal filling. Dynamic variation process of temperature fields during T1G welding was achieved. The simulated results agreed well with the measured results.展开更多
Through detailed three-dimensional （3D） finite element （FE） calculations, the out-of-plane constraints Tz along embedded center-elliptical cracks in mode I elastic plates are studied. The distributions of Tz are o...Through detailed three-dimensional （3D） finite element （FE） calculations, the out-of-plane constraints Tz along embedded center-elliptical cracks in mode I elastic plates are studied. The distributions of Tz are obtained near the crack front with aspect ratios （a/c） of 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0. Tz decreases from an approximate value of Poisson ratio v at the crack tip to zero with increasing normalized radial distances （r/a） in the normal plane of the crack front line, and increases gradually when the elliptical parameter angle φ changes from 0° to 90°at the same r/a. With a/c rising to 1.0, Tz is getting nearly independent of φ and is only related to r/a. Based on the present FE calculations for Tz, empirical formulas for Tz are obtained to describe the 3D distribution of Tz for embedded center-elliptical cracks using the least squares method in the range of 0.2 ≤ a/c ≤ 1.0. These Tz results together with the corresponding stress intensity factor K are well suitable for the analysis of the 3D embedded centerelliptical crack from field, and a two-parameter K-Tz principle is proposed.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP...A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.展开更多
The magnetization behavior of a CuFeO2 single crystal grown by the floating zone technique is investigated with a pulsed high magnetic field. We observe a series of field-induced multi-step-like transitions with hyste...The magnetization behavior of a CuFeO2 single crystal grown by the floating zone technique is investigated with a pulsed high magnetic field. We observe a series of field-induced multi-step-like transitions with hysteresis, of which the critical magnetic fields are temperature-dependent and show anisotropy. By using a pulsed high magnetic field up to 75 T, the magnetization behavior shows that the critical transition magnetic fields of spin- flip/flop shift to lower field regions with an increase in temperature. According to the magnetization curves, a complete magnetic phase diagram is depicted.展开更多
文摘缺血性脑卒中的病因分型对临床治疗决策和预后判断有重要价值。近年来,随着高分辨率磁共振血管壁成像(high-resolution vessel wall magnetic resonance imaging,HR-VW-MRI)在脑卒中临床研究和实践中的应用增加,7 T MRI以其更高信噪比和更优图像质量,可发现脑血管早期、细微的病理变化,为深入了解各种脑血管疾病的病理机制提供了新思路。然而,超高场强也存在B1场不均、扫描时间长等技术挑战。本文就7 T HR-VW-MRI在缺血性卒中病因分型及临床应用中的进展进行综述,深入分析7 T HR-VW-MRI在提升临床诊断精确性与指导临床治疗中的潜在价值,为临床实践与科研探索提供参考。
基金China Postdoctoral Science Foundation (No 20080430129)
文摘Three-dimensional finite element model was established to simulate temperature fields of T-joint titanium sheets during TIG welding with finite element method （FEM） software. Temperature dependent material properties and the effect of latent heat were considered. A technique of element birth and death was used to simulate the process of welded metal filling. Dynamic variation process of temperature fields during T1G welding was achieved. The simulated results agreed well with the measured results.
基金The project supported by the National Natural Science Foundation of China （50275073）
文摘Through detailed three-dimensional （3D） finite element （FE） calculations, the out-of-plane constraints Tz along embedded center-elliptical cracks in mode I elastic plates are studied. The distributions of Tz are obtained near the crack front with aspect ratios （a/c） of 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0. Tz decreases from an approximate value of Poisson ratio v at the crack tip to zero with increasing normalized radial distances （r/a） in the normal plane of the crack front line, and increases gradually when the elliptical parameter angle φ changes from 0° to 90°at the same r/a. With a/c rising to 1.0, Tz is getting nearly independent of φ and is only related to r/a. Based on the present FE calculations for Tz, empirical formulas for Tz are obtained to describe the 3D distribution of Tz for embedded center-elliptical cracks using the least squares method in the range of 0.2 ≤ a/c ≤ 1.0. These Tz results together with the corresponding stress intensity factor K are well suitable for the analysis of the 3D embedded centerelliptical crack from field, and a two-parameter K-Tz principle is proposed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61306017,61474091,and 61574110)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012)
文摘A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.
基金Supported by the National Natural Science Foundation of China under Grant No 11104091the Guangxi Key Laboratory of Information Materials of Guilin University of Electronic Technology under Grant No 1210908-05-K
文摘The magnetization behavior of a CuFeO2 single crystal grown by the floating zone technique is investigated with a pulsed high magnetic field. We observe a series of field-induced multi-step-like transitions with hysteresis, of which the critical magnetic fields are temperature-dependent and show anisotropy. By using a pulsed high magnetic field up to 75 T, the magnetization behavior shows that the critical transition magnetic fields of spin- flip/flop shift to lower field regions with an increase in temperature. According to the magnetization curves, a complete magnetic phase diagram is depicted.
