It is assumed that reconfigurable intelligent surface(RIS)is a key technology to enable the potential of mmWave communications.The passivity of the RIS makes channel estimation difficult because the channel can only b...It is assumed that reconfigurable intelligent surface(RIS)is a key technology to enable the potential of mmWave communications.The passivity of the RIS makes channel estimation difficult because the channel can only be measured at the transceiver and not at the RIS.In this paper,we propose a novel separate channel estimator via exploiting the cascaded sparsity in the continuously valued angular domain of the cascaded channel for the RIS-enabled millimeter-wave/Tera-Hz systems,i.e.,the two-stage estimation method where the cascaded channel is separated into the base station(BS)-RIS and the RIS-user(UE)ones.Specifically,we first reveal the cascaded sparsity,i.e.,the sparsity exists in the hybrid angular domains of BS-RIS and the RIS-UEs separated channels,to construct the specific sparsity structure for RIS enabled multi-user systems.Then,we formulate the channel estimation problem using atomic norm minimization(ANM)to enhance the proposed sparsity structure in the continuous angular domains,where a low-complexity channel estimator via Alternating Direction Method of Multipliers(ADMM)is proposed.Simulation findings demonstrate that the proposed channel estimator outperforms the current state-of-the-arts in terms of performance.展开更多
This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode(MUTC-PD)packaged with standard WR-5 rectangular waveguide for high-speed wireless communications.With optimized epitaxy s...This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode(MUTC-PD)packaged with standard WR-5 rectangular waveguide for high-speed wireless communications.With optimized epitaxy structure and coplanar waveguide electrodes,the fabricated 4-μm-diameter PD exhibits ultra-flat frequency response and high saturation power.Integrated passive circuits including low-loss bias-tee and E-plane probe are designed to package the PD into a compact module with waveguide output.The packaged PD module has demonstrated a flat frequency response with fluctuations within±2.75 d B over a broadband of 140–220 GHz and a high saturated output power of-7.8 d Bm(166μW)at 140 GHz.For wireless communication applications,the packaged PD is used to implement 1-m free space transmission at carrier frequencies of 150.5 and 210.5 GHz,with transmission rates of 75 and 90 Gbps,respectively.展开更多
The Ga N high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the...The Ga N high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the coupling efficiency between two-dimensional(2D)plasmons and THz radiation.In this work,we investigate the plasma oscillation,electromagnetic radiation,and the integration characteristics of Ga N HEMT targeting at a high THz radiation power source.The quantitative radiation power and directivity are obtained for integrated Ga N HEMT array with different array periods and element numbers.With the same initial plasma oscillation phase among the HEMT units,the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8electromagnetic wavelength.In addition,the radiation power of the HEMT array varies almost linearly with the element number,the smaller array period can lead to the greater radiation power.It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power.Increasing the element number can improve both the radiation directivity and power.We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency,which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements.The study of the radiation power amplification of the one-dimensional(1D)Ga N HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.展开更多
Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and...Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance;the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions;the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.展开更多
文摘It is assumed that reconfigurable intelligent surface(RIS)is a key technology to enable the potential of mmWave communications.The passivity of the RIS makes channel estimation difficult because the channel can only be measured at the transceiver and not at the RIS.In this paper,we propose a novel separate channel estimator via exploiting the cascaded sparsity in the continuously valued angular domain of the cascaded channel for the RIS-enabled millimeter-wave/Tera-Hz systems,i.e.,the two-stage estimation method where the cascaded channel is separated into the base station(BS)-RIS and the RIS-user(UE)ones.Specifically,we first reveal the cascaded sparsity,i.e.,the sparsity exists in the hybrid angular domains of BS-RIS and the RIS-UEs separated channels,to construct the specific sparsity structure for RIS enabled multi-user systems.Then,we formulate the channel estimation problem using atomic norm minimization(ANM)to enhance the proposed sparsity structure in the continuous angular domains,where a low-complexity channel estimator via Alternating Direction Method of Multipliers(ADMM)is proposed.Simulation findings demonstrate that the proposed channel estimator outperforms the current state-of-the-arts in terms of performance.
基金supported in part by National Key Research and Development Program of China(No.2022YFB2803002)National Natural Science Foundation of China(Nos.62235005,62127814,62225405,61975093,61927811,61991443,61925104 and 61974080)Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics.
文摘This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode(MUTC-PD)packaged with standard WR-5 rectangular waveguide for high-speed wireless communications.With optimized epitaxy structure and coplanar waveguide electrodes,the fabricated 4-μm-diameter PD exhibits ultra-flat frequency response and high saturation power.Integrated passive circuits including low-loss bias-tee and E-plane probe are designed to package the PD into a compact module with waveguide output.The packaged PD module has demonstrated a flat frequency response with fluctuations within±2.75 d B over a broadband of 140–220 GHz and a high saturated output power of-7.8 d Bm(166μW)at 140 GHz.For wireless communication applications,the packaged PD is used to implement 1-m free space transmission at carrier frequencies of 150.5 and 210.5 GHz,with transmission rates of 75 and 90 Gbps,respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.92163204,61921002,and 62171098)。
文摘The Ga N high electron mobility transistor(HEMT)has been considered as a potential terahertz(THz)radiation source,yet the low radiation power level restricts their applications.The HEMT array is thought to improve the coupling efficiency between two-dimensional(2D)plasmons and THz radiation.In this work,we investigate the plasma oscillation,electromagnetic radiation,and the integration characteristics of Ga N HEMT targeting at a high THz radiation power source.The quantitative radiation power and directivity are obtained for integrated Ga N HEMT array with different array periods and element numbers.With the same initial plasma oscillation phase among the HEMT units,the radiation power of the two-element HEMT array can achieve 4 times as the single HEMT radiation power when the array period is shorter than 1/8electromagnetic wavelength.In addition,the radiation power of the HEMT array varies almost linearly with the element number,the smaller array period can lead to the greater radiation power.It shows that increasing the array period could narrow the main radiated lobe width while weaken the radiation power.Increasing the element number can improve both the radiation directivity and power.We also synchronize the plasma wave phases in the HEMT array by adopting an external Gaussian plane wave with central frequency the same as the plasmon resonant frequency,which solves the problem of the radiation power reduction caused by the asynchronous plasma oscillation phases among the elements.The study of the radiation power amplification of the one-dimensional(1D)Ga N HEMT array provides useful guidance for the research of compact high-power solid-state terahertz sources.
基金funded by National Natural Science Foundation of China (No. 12065015)the Hongliu First-level Discipline Construction Project of Lanzhou University of Technology。
文摘Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance;the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions;the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.
