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Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3 被引量:1
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作者 曹硕 周庆莉 +2 位作者 关东仪 吕惠宾 杨国桢 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第6期1551-1553,共3页
The resistivity of the heavy-doped La1/3Ca2/3MnO3 (LCMO) is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data... The resistivity of the heavy-doped La1/3Ca2/3MnO3 (LCMO) is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered (CDO) state embedded with a few ferromagnetic (FM) metallic clusters to a charge-ordered (CO) state, corresponding to the transition from a high-temperature paramagnetic (PM) insulating state to a low-temperature antiferromagnetic (AF) insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO. 展开更多
关键词 PHASE-SEPARAtiON POSItiVE MAGNETORESISTANCE COLOSSAL MAGNETORESISTANCE MAGNEtiC-FIELD thin-films OXIDE LA0.9SR0.1MNO3/SRNB0.01ti0.99O3 HETEROJUNCtiONS HETEROSTRUCTURE LA1-XTEXMNO3
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Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors
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作者 贾泽 任天令 +4 位作者 刘天志 胡洪 张志刚 谢丹 刘理天 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第4期1042-1045,共4页
Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors... Pb(Zr0.4Ti0.6)O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes. 展开更多
关键词 CHEMICAL-VAPOR-DEPOSItiON PB(ZR ti)o-3 thin-films ELECTRODES FAtiGUE MEMORY POLARIZAtiON tiTANATE SILICON
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