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低温ITO薄膜制备及其在TOLED中的应用 被引量:8
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作者 林慧 蒋亚东 +3 位作者 于军胜 李军建 王军 邓建芳 《光电子.激光》 EI CAS CSCD 北大核心 2007年第9期1068-1070,共3页
通过在直流磁控溅射过程中加入微量水蒸气的方法,在低于60℃温度条件下制备了具有优良光电性能的透明导电ITO薄膜,并探讨了溅射功率、基板温度对ITO薄膜光电性能的影响。利用制得的ITO薄膜作电极,制作了结构为ITO/CuPc/NPB/Alq3/BCP/Mg... 通过在直流磁控溅射过程中加入微量水蒸气的方法,在低于60℃温度条件下制备了具有优良光电性能的透明导电ITO薄膜,并探讨了溅射功率、基板温度对ITO薄膜光电性能的影响。利用制得的ITO薄膜作电极,制作了结构为ITO/CuPc/NPB/Alq3/BCP/Mg∶Ag/ITO的透明有机电致发光器件(TOLEDs),结果表明,器件的平均透过率达到45%;在驱动电压15V的条件下,发光亮度达到了3000cd/m2。 展开更多
关键词 ITO薄膜 直流磁控溅射 透明有机电致发光器件(toleds) 光电性能
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STUDY ON MEASURES OF FAULT TOLERANCE FOR DISTRIBUTED SYSTEM
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作者 武小悦 沙基昌 何小怀 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 1998年第1期65-68,共4页
Fault tolerant ability is an important aspect for overall evaluation of distributed system(DS). This paper discusses three measures for the evaluation: node/edge connectivity, number of spanning trees and synthetic co... Fault tolerant ability is an important aspect for overall evaluation of distributed system(DS). This paper discusses three measures for the evaluation: node/edge connectivity, number of spanning trees and synthetic connectivity. A numerical example for illustration and analysis is given, and the synthetic connectivity measure presented by this paper is proved to be rational and satisfactory. 展开更多
关键词 distributed network EVALUATIONS fault tole rant technique RELIABILITY network topology distributed system
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柔性有源矩阵OLED显示器:挑战和发展 被引量:1
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作者 胡彬彬(译) 《显示器件技术》 2010年第1期43-49,共7页
有机发光二极管(OLED)器件对于柔性显示器的应用是非常有希望的候选资源,因为它们拥有有机薄膜结构和卓越的光学与视频性能.柔性有机发光二极管(OLED)技术近来的发展对于高性能全彩色有源矩阵有机发光二极管(AMOLED)显示器来说... 有机发光二极管(OLED)器件对于柔性显示器的应用是非常有希望的候选资源,因为它们拥有有机薄膜结构和卓越的光学与视频性能.柔性有机发光二极管(OLED)技术近来的发展对于高性能全彩色有源矩阵有机发光二极管(AMOLED)显示器来说是可以看到的,未来面临的挑战还要进行讨论。具体的重点放在技术的组成部分,包括高效磷光OLED技术、柔性显示器的基板和底板、透明复合阴极技术、保形包装和这些设备的柔性测试。最后,我们将描述与LG飞利浦LCD合作的最新型号的产品,构建在非晶硅底板上的4英寸QVGA柔性全彩色有源矩阵有机发光二极管(AMOLED)。 展开更多
关键词 有机发光二极管(OLED)器件 磷光有机发光器件(PHOLED) 柔性有机发光器件(FOLED) 项部发射式有机发光器件(toled) 薄膜晶体管(’肿) 有源矩阵有机发光二极管(AMOLED) 非晶硅(a—Si) 低温多晶硅(LTPS) 复合阴极 透明导电氧化物(TCO).
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Examining micro-cavity parameters of top emission organic light-emitting diode with low-order resonant modes
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作者 曹进 王立 张建华 《Journal of Shanghai University(English Edition)》 CAS 2011年第4期235-238,共4页
Emission characteristics of top emitting organic light-emitting devices (TOLEDs) with Ag as reflective anode, Al/Ag as semitransparent cathode and 90 160 nm [N-(1-naphthyl)-N-phenyl-amino] biphenyl/tris-(8-hydrox... Emission characteristics of top emitting organic light-emitting devices (TOLEDs) with Ag as reflective anode, Al/Ag as semitransparent cathode and 90 160 nm [N-(1-naphthyl)-N-phenyl-amino] biphenyl/tris-(8-hydroxy quinoline) aluminum (NPB/Alq3) sandwiched in the electrodes are examined. The electroluminescence (EL) spectra of the TOLEDs are simulated based on the Fabry-Perot cavity theory. And the resonant modes in cavity structure of TOLEDs is discussed and clarified which can accurately describe the work principle of the devices. A fairly good match between calculated values and experimental data is achieved at different emission colors from bluish green to orange. 展开更多
关键词 top-emitting organic light-emitting devices toleds) MICRO-CAVITY resonant modes
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应用LaB_6透明阴极的有机发光二极管器件 被引量:6
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作者 蒋泉 成建波 +4 位作者 陈文斌 杨刚 张磊 饶海波 杨建君 《光电子.激光》 EI CAS CSCD 北大核心 2005年第7期793-796,共4页
采用了类似于电子束蒸发工艺制备透明有机发光二极管(TOLED)的阴极。使用了一种新材料LaB6作为透明阴极,器件结构为ITO/TPD/Alq3/LaB6。LaB6薄膜的沉积是利用氧化物阴极的电子束轰击装在石墨坩埚的LaB6粉末。由于LaB6的功函数很低,器件... 采用了类似于电子束蒸发工艺制备透明有机发光二极管(TOLED)的阴极。使用了一种新材料LaB6作为透明阴极,器件结构为ITO/TPD/Alq3/LaB6。LaB6薄膜的沉积是利用氧化物阴极的电子束轰击装在石墨坩埚的LaB6粉末。由于LaB6的功函数很低,器件具有良好的电子注入性能。器件在可见光光谱范围的透过率为70%左右,当驱动电压为7.2V,对应注入电流密度为4.8mA/cm2,亮度可达100cd/m2。 展开更多
关键词 透明有机发光二极管(toled) 透明阴极 LaB6 电子束
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矩形阵列阴极绿色磷光透明有机电致发光器件
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作者 刘晋红 张方辉 《光电子.激光》 EI CAS CSCD 北大核心 2018年第6期594-599,共6页
为了提高透明OLED的出光效率,本文采用了网孔阴极掩膜版结合Al:Ag合金制备了透明器件的阴极,得到了呈规则排布的矩形阵列状的阴极。加上电压后,这些小的发光区域就会形成一整个连续发光的面。同时,矩阵式的阴极即可以作为反射阴极给底... 为了提高透明OLED的出光效率,本文采用了网孔阴极掩膜版结合Al:Ag合金制备了透明器件的阴极,得到了呈规则排布的矩形阵列状的阴极。加上电压后,这些小的发光区域就会形成一整个连续发光的面。同时,矩阵式的阴极即可以作为反射阴极给底发射提供一部分光,在一定程度上也减薄了阴极厚度,从而提升了顶发射的出光率。器件具体结构如下:Glass/ITO/MoO_3(40nm)/NPB(40nm)/TCTA(10nm)/CBP:Ir(ppy)_2(acac)(14%)(30nm)/BCP(10nm)/Alq3(30nm)/LiF(1nm)/Al:Ag(1∶3)(xnm),x=75,80,85和90。实验过程中发现阴极Al:Ag(1∶3)厚度为80nm时,器件的电子注入能力较强,开启电压有所降低,亮度达到最高,底发射和顶发射亮度分别为10 120cd/m^2和2 894cd/m^2。当阴极厚度为70nm、波长为595nm时取得了透过率的最大值65.44%。器件在阴极合金厚度为90nm时,取得了最高效率20.48cd/A。 展开更多
关键词 toled 网状掩膜版 合金阴极 光萃取
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Efficient blue fluorescence tandem organic light emitting device with a novel intermediate connector 被引量:1
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作者 LIU Ya-dong LI Ji-chao +4 位作者 ZHANG Jie GUO Wang-jun WU Zhi-sheng MI Yu-hua SONG Xin-chao 《Optoelectronics Letters》 EI 2019年第2期85-88,共4页
A novel intermediate connector(IC) was formed which was composed of aluminum(Al, 3 nm)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile(HAT-CN).The 3-nm-thick Al in the IC is certified to efficiently generate intrins... A novel intermediate connector(IC) was formed which was composed of aluminum(Al, 3 nm)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile(HAT-CN).The 3-nm-thick Al in the IC is certified to efficiently generate intrinsic charge carriers, and the HAT-CN is proved to work as the holes injection layer(HIL) for the corresponding electroluminescent(EL) unit simultaneously.This simply IC comprehensively takes advantage of the features of the HAT-CN so as to stack two single EL units without introducing extra material.In addition to a significant enhancement in luminance and current efficiency, a current efficiency(CE) of 10.2 cd/A and a luminance of 2 042 cd/m^2 under the current density 20 mA/cm^2 of this tandem organic light emitting device(TOLED) are yielded, which are notably almost the sum of that of the two single-unit devices. 展开更多
关键词 NPB IC Al EFFICIENT toled LIF CN
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Tandem organic light-emitting diodes with buffer-modified C60/ZnPc as charge generation layer
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作者 CHEN Ai WANG Zhen +1 位作者 XIE Jia-feng WANG Pei 《Optoelectronics Letters》 EI 2019年第3期185-189,共5页
In this paper, a significant enhancement in current efficiency of the green tandem organic light-emitting diodes(TOLEDs) is demonstrated, which is based on a buffer-modified charge generation layer(CGL) of fullerene c... In this paper, a significant enhancement in current efficiency of the green tandem organic light-emitting diodes(TOLEDs) is demonstrated, which is based on a buffer-modified charge generation layer(CGL) of fullerene carbon(C60)/zinc-phthalocyanine(ZnPc). Al and MoO3 were used as the buffer-modified layers on both sides of the bilayer C60/ZnPc, respectively. Experimental results show that the inserted Al and MoO3 layers can effectively increase the electron extraction of the CGL for obtaining the device performance enhancement. Compared with that of the green TOLEDs without buffer-modified layers in CGL(37.3 cd·A-1), the current efficiency of the green TOLEDs is increased to 54.1 cd·A-1. Further study results find that the performance can also be improved by optimizing the thickness of Al in the CGL. The maximum current efficiency and maximum luminance of the green TOLEDs achieve 63.5 cd·A-1 and 17 873 cd·m-2, respectively, when the multilayer structure of the CGL is Al(3 nm)/C60(5 nm)/ZnPc(5 nm)/MoO3(3 nm). 展开更多
关键词 toled OLEDs CGL TANDEM organic light-emitting diodes with buffer-modified C ZnPc as charge generation LAYER NPB Al
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