Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous sem...Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.展开更多
We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposu...We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposure times. The results indicate that photo-crystallization is fast in a-Se95In5 alloy as compared to a-Se95 Te5 alloy. This is explained in terms of lower thermal stability of a-Se95In5 alloy as compared to a-Se95 Te5 alloy.展开更多
Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photocond...Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photoconductivity decays indicates that Ti(iso-C3H7O)4 treatment leads to an increased concentration of photogenerated charge carriers and a fast interfacial transfer rate of holes via the surface modification of the freshly growing TiO2 nanocrystallites.展开更多
文摘Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.
文摘We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposure times. The results indicate that photo-crystallization is fast in a-Se95In5 alloy as compared to a-Se95 Te5 alloy. This is explained in terms of lower thermal stability of a-Se95In5 alloy as compared to a-Se95 Te5 alloy.
基金This work was supported by National Research Fund for Fundamental Key Project(G2000028205)Innovative Foundation of Chinese Academy of Sciences(KGCX2-303-02)the Project of the National Natural Science Foundation of China(29873057).
文摘Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photoconductivity decays indicates that Ti(iso-C3H7O)4 treatment leads to an increased concentration of photogenerated charge carriers and a fast interfacial transfer rate of holes via the surface modification of the freshly growing TiO2 nanocrystallites.
